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DG611/612/613
Vishay Siliconix
High-Speed, Low-Glitch D/CMOS Analog Switches
DESCRIPTION
The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611/612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup. The DG611 and DG612 differ only in that they respond to opposite logic levels. The versatile DG613 has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, one DPDT. For additional information see Applications Note AN207 (FaxBack number 70605).
FEATURES
* * * * * * * Fast Switching - tON: 12 ns Low Charge Injection: 2 pC Wide Bandwidth: 500 MHz 5 V CMOS Logic Compatible Low rDS(on): 18 Low Quiescent Power : 1.2 nW Single Supply Operation
Pb-free Available
RoHS*
COMPLIANT
BENEFITS
* * * * * * Improved Data Throughput Minimal Switching Transients Improved System Performance Easily Interfaced Low Insertion Loss Minimal Power Consumption
APPLICATIONS
* * * * * * * * Fast Sample-and-Holds Synchronous Demodulators Pixel-Rate Video Switching Disk/Tape Drives DAC Deglitching Switched Capacitor Filters GaAs FET Drivers Satellite Receivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611
IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 16 15 14 IN2 D2 S2 V+ VL S3 D3 IN3 9 10 11 12 13 D4 IN4 NC IN3 D3 Key S1 VNC GND S4 4 5 6 7 8 3 2
DG611
D1 IN1 NC IN2 D2 1 20 19 18 17 S2 V+ NC VL S3
Four SPST Switches per Package
TRUTH TABLE
Logic 0 1 Logic "0" 1 V Logic "1" 4 V DG611 ON OFF DG612 OFF ON
Dual-In-Line 13 and SOIC
Top View 12 11 10 9
LCC
Top View
16 15 14
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70057 S-71155-Rev. H, 11-Jun-07 www.vishay.com 1
DG611/612/613
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG613
IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 16 15 14 IN2 D2 S2 Key S1 VNC GND S4 4 5 6 7 8 9 10 3 2
DG613
D1 IN1 NC 1 IN2 D2 19 18 17 S2 V+ NC VL S3 20
Four SPST Switches per Package
TRUTH TABLE
Logic 0 1 Logic "0" 1 V Logic "1" 4 V SW1, SW4 OFF ON SW2, SW3 ON OFF
Dual-In-Line 13 V+ and SOIC
Top View 12 11 10 9 VL S3 D3 IN3
LCC
Top View
16 15 14
11 12
13
D4 IN4 NC IN3 D3
ORDERING INFORMATION
Temp Range DG611/612 DG611DJ DG611DJ-E3 DG612DJ DG612DJ-E3 DG611DY DG611DY-E3 DG611DY-T1 DG611DY-T1-E3 DG612DY DG612DY-E3 DG612DY-T1 DG612DY-T1-E3 DG613DJ DG613DJ-E3 DG613DY DG613DY-E3 DG613DY-T1 DG613DY-T1-E3 Package Part Number
16-Pin Plastic DIP
- 40 to 85 C 16-Pin Narrow SOIC
DG613 16-Pin Plastic DIP - 40 to 85 C 16-Pin Narrow SOIC
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Document Number: 70057 S-71155-Rev. H, 11-Jun-07
DG611/612/613
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter V+ to VV+ to GND V- to GND VL to GND VIN
a
Limit - 0.3 to 21 - 0.3 to 21 - 19 to 0.3 - 1 to (V+) + 1 or 20 mA, whichever occurs first (V-) - 1 to (V+) + 1 or 20 mA, whichever occurs first (V-) - 0.3 to (V+) + 16 or 20 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 470
d
Unit
V
VS, VDa Continuous Current (Any Terminal) Current, S or D (Pulsed at 1 s, 10 % Duty Cycle) Storage Temperature CerDIP Plastic 16-Pin Plastic DIPc Power Dissipation (Package)b 16-Pin Narrow SOIC 16-Pin CerDIP 20-Pin LCCe
e
mA C
600 900 900
mW
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/C above 75 C. d. Derate 7.6 mW/C above 75 C. e. Derate 12 mW/C above 75 C.
RECOMMENDED OPERATING RANGE
Parameter V+ VVL VIN VANALOG Limit 5 to 21 - 10 to 0 4 to V+ 0 to VL V- to (V+) - 5 V Unit
Document Number: 70057 S-71155-Rev. H, 11-Jun-07
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DG611/612/613
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 3 V Parameter Analog Switch Analog Signal Rangee Switch On-Resistance Resistance Match Bet Ch. Source Off Leakage Drain Off Leakage Current Switch On Leakage Current Digital Control Input Voltage High Input Voltage Low Input Current Input Capacitance Dynamic Characteristics Off State Input Capacitance Off State Output Capacitance On State Input Capacitance Bandwidth Turn-On Timee CS(off) CD(off) CS(on) BW tON tOFF tON tOFF Q
e,g
A Suffix - 55 to 125 C Tempb Full Room Full Room Room Hot Room Hot Room Hot Full Full Room Hot Room 0.005 5 3 2 10 500 12 8 19 16 4 3 74 4 25 20 35 50 25 35 18 2 0.001 - 0.25 - 20 0.001 - 0.25 - 20 0.001 - 0.4 - 40 4 -1 - 20 1 1 20 Typc Mind -5 Maxd 7 45 60 0.25 20 0.25 20 0.4 40
D Suffix - 40 to 85 C Mind -5 Maxd 7 45 60 - 0.25 - 20 - 0.25 - 20 - 0.4 - 40 4 -1 - 20 1 1 20 0.25 20 0.25 20 0.4 40 Unit V
Symbol VANALOG rDS(on) rDS(on) IS(off) ID(off) ID(on) VIH VIL IIN CIN
VL = 5 V, VIN = 4 V, 1 Vf V- = - 5 V, V+ = 12 V IS = - 1 mA, VD = 0 V VS = 0 V, VD = 10 V VS = 10 V, VD = 0 V VS = V D = 0 V
nA
V A pF
VS = 0 V VD = 0 V VS = V D = 0 V RL = 50 RL = 300 , CL = 3 pF VS = 2 V, See Test Circuit, Figure 2 RL = 300 , CL = 75 pF VS = 2 V, See Test Circuit, Figure 2 CL = 1 nF, VS = 0 V CL = 1 nF, |VS| 3 V RIN = 50 , RL = 50 f = 5 MHz RIN = 10 , RL = 50 f = 5 MHz
Room Room Room Room Room Room Room Full Room Full Room Room Room Room
pF MHz 25 20 35 50 25 35 4 ns
Turn-Off Timee Turn-On Time Turn-Off Time Charge Injectione Ch. Injection Change Off Isolatione Crosstalke Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current
Q OIRR XTALK
pC
dB 87
I+ IVIN = 0 V or 5 V IL IGND
Room Full Room Full Room Full Room Full
0.005 - 0.005 0.005 - 0.005 -1 -5 -1 -5
1 5 -1 -5 1 5 -1 -5
1 5 A
1 5
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Document Number: 70057 S-71155-Rev. H, 11-Jun-07
DG611/612/613
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIESa
Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 3 V Parameter Analog Switch Analog Signal Rangee Switch On-Resistance Dynamic Characteristics Turn-On Timee Turn-Off Timee Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Q = |Q at VS = 3 V - Q at VS = - 3 V|. tON tOFF RL = 300 , CL = 3 pF VS = 2 V, See Test Circuit, Figure 2 Room Room 15 10 30 25 30 25 ns Symbol VANALOG rDS(on) IS = - 1 mA, VD = 1 V VL = 5 V, VIN = 4 V, 1 Vf Tempb Full Room 25 Typc A Suffix - 55 to 125 C Mind 0 Maxd 7 60 D Suffix - 40 to 85 C Mind 0 Maxd 7 60 Unit V
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
400 IS = - 1 mA r DS(on) - Drain-Source On-Resistance () 350 300 250 200 150 100 50 0 -5 -4 -2 0 2 4 6 VD - Drain Voltage (V) 8 10 12 -3 -4 V+ = 5 V V- = - 5 V V+ = 15 V V- = - 3 V I S, I D - Leakage Current (pA) V+ = 12 V V- = - 5 V 2 3 V+ = 15 V V- = - 3 V
1 IS(off), ID(off) 0
-1 ID(on)
-2
-2 0 2 4 6 8 VD or VS - Drain or Source Voltage (V)
10
rDS(on) vs. VD and Power Supply Voltages
Leakage Current vs. Analog Voltage
Document Number: 70057 S-71155-Rev. H, 11-Jun-07
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DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
6 V+ = 15 V V- = - 3 V 24 22 20 18 4 Time (ns) 16 14 12 10 8 6 1 4 2 0 0 5 10 15 VL - Logic Supply Voltage (V) 0 - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (C) V+ = 15 V V- = - 3 V RL = 300 CL = 10 pF tOFF tON
5 V TH - Logic Input Voltage (V)
3
2
Input Switching Threshold vs. VL
400 r DS(on) - Drain-Source On-Resistance () 350 300 Charge (pC) 250 200 150 25 C 100 50 0 -4 -2 0 2 4 6 8 VD - Drain Voltage (V) 10 12 125 C - 55 C - 20 - 10 V+ = 15 V V- = - 3 V IS = - 1 mA 10 20
Switching Times vs. Temperature
V+ = 15 V V- = - 3 V
Qd
0 Qs
-3 -2 -1
0
1
2
3
4
5
6
7
8
9
10
rDS(on) vs. VD and Temperature
10 nA 1 nA I S(off), I D(off)- Leakage (A) 0
VANALOG - Analog Voltage (V)
Charge Injection vs. Analog Voltage
RL = 50 -4
100 pA ID(on) 10 pA IS(off), ID(off)
Insertion Loss (dB)
-8
- 12 - 3 dB Point - 16
1 pA
- 20
0.1 pA - 55 - 25 0 25 50 Temperature (C) 75 100 125
- 24 1 10 100 1000
f - Frequency (MHz)
Leakage Currents vs. Temperature
- 3 dB Bandwidth/Insertion Loss vs. Frequency
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Document Number: 70057 S-71155-Rev. H, 11-Jun-07
DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS
- 120 V+ = 15 V V- = - 3 V - 100 Supply Current (mA)
25 C, unless otherwise noted
6 5 4 3 V+ = 15 V V- = - 3 V VL = 5 V CX = 0, 5 V I+
- 80 (dB)
Crosstalk
2 1 0 -1 -2 -3 -4 IIL
- 60 Off Isolation - 40
- 20 1 10 f - Frequency (MHz) 100
-5 1k 100 k 100 k f - Frequency (Hz) 1M 10 M
Crosstalk and Off Isolation vs. Frequency
Supply Currents vs. Switching Frequency
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ VL S INX Input Logic Level Translator Driver DMOS Switch D
V-
Figure 1.
TEST CIRCUITS
+5V + 15 V 5V Logic Input VL 2V S IN GND VRL 300 CL Switch Output 0V tON VCL (includes fixture and stray capacitance) VO = V S RL RL + rDS(on) 20 % tOFF V+ D VO 0V VS = 2 V 90 % 50 % tr < 10 ns tf < 10 ns
Figure 2. Switching Time
Document Number: 70057 S-71155-Rev. H, 11-Jun-07
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DG611/612/613
Vishay Siliconix
TEST CIRCUITS
C +5V + 15 V C
VS +5V + 15 V Rg = 50 1 V, 4 V Rg VL S IN 5V GND VXTA LK Isolation = 20 log -3V C = RF bypass VS VO V+ D VO NC 1 V, 4 V
VL S1 IN1 S2 IN2 GND
V+ D1 50 VO RL VC
D2
Vg
CL 1 nF
-3V
Figure 3. Charge Injection
Figure 4. Crosstalk
APPLICATIONS
High-Speed Sample-and-Hold In a fast sample-and-hold application, the analog switch characteristics are critical. A fast switch reduces aperture uncertainty. A low charge injection eliminates offset (step) errors. A low leakage reduces droop errors. The CLC111, a fast input buffer, helps to shorten acquisition and settling times. A low leakage, low dielectric absorption hold capacitor must be used. Polycarbonate, polystyrene and polypropylene are good choices. The JFET output buffer reduces droop due to its low input bias current. (See Figure 5.) Pixel-Rate Switch Windows, picture-in-picture, title overlays are economically generated using a high-speed analog switch such as the DG613. For this application the two video sources must be sync locked. The glitch-less analog switch eliminates halos. (See Figure 6.) GaAs FET Drivers Figure 7 illustrates a high-speed GaAs FET driver. To turn the GaAs FET on 0 V are applied to its gate via S1, whereas to turn it off, - 8 V are applied via S2. This high-speed, low-power driver is especially suited for applications that require a large number of RF switches, such as phased array radars.
Input Buffer
+5V
+ 12 V Output Buffer
Analog Input 75
CLC111
S
D
+ LF356 5 V Output to A/D
5 V Control
IN
1/ 4
DG611
CHOLD 650 pF Polystyrene
-5V
Figure 5. High-Speed Sample-and-Hold
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Document Number: 70057 S-71155-Rev. H, 11-Jun-07
DG611/612/613
Vishay Siliconix
APPLICATIONS
+5V Background
+ 12 V Output Buffer D + CLC410 250 250 75 Composite Output
75
1/ CLC114 2
Titles
75
5 V Control
1/ 2
DG613
-5V
Figure 6. A Pixel-Rate Switch Creates Title Overlays
+5V
S1 IN1
VL
V+
D1
RF IN
GaAs
RF OUT
1/ 2
DG613
D2
S2 5V IN2 GND V-
-8V
Figure 7. A High-Speed GaAs FET Driver that Saves Power
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70057.
Document Number: 70057 S-71155-Rev. H, 11-Jun-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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