View 2SK1579_4261351.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK1579
Silicon N Channel MOS FET
REJ03G0956-0200 (Previous: ADE-208-1296) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* Low on-resistance * High speed switching * Suitable for low voltage operation
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
3 21 4 G D 1. Gate 2. Drain 3. Source 4. Drain
S
Note:
Marking is "DY". *UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK1579
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel power dissipation Channel temperature Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 12 7 2 4 2 1 150 -55 to +150
Unit V V A A A W
*2
Storage temperature Tstg Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source cutoff current Gate to source cutoff current Gate to source cutoff voltage Drain to source on resistance (1) Drain to source on resistance (2) DC forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Turn-off time Note: 3. Pulse Test Symbol IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 |yfs| Ciss Crss Coss t(on) t(off) Min -- -- 0.4 -- -- 1 -- -- -- -- -- Typ -- -- -- 0.36 0.25 2.5 110 30 150 500 1500 Max 1 5 1.4 0.7 0.35 -- -- -- -- -- -- Unit A A V S pF pF pF ns ns Test conditions VDS = 8 V, VGS = 0 VGS = 6.5 V, VDS = 0 VDS = 5 V, ID = 100 A VGS = 2.2 V, ID = 0.5 A *3 VGS = 4 V, ID = 1 A VDS = 5 V, ID = 1 A, *3 VGS = 0.1 V VDS = 5 V, VGS = 0, f = 1 MHz ID = 0.2 A, VGS = 0, *3 Vin = 4 V, RL = 51
*3
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK1579
Main Characteristics
Maximum Channel Power Dissipation Curve
1.6
Channel Power Dissipation Pch** (W) (** on the almina ceramic board)
Maximum Safe Operation Area
50 20
Drain Current ID (A)
O is per lim ati ite on d b in y R this
0.8
2 1 0.5 0.2
DS
DC
(o
5
ar
n)
ea
1.2
10
Op
era
PW = 10 ms 1 Shot
tio
n(
T
C
0.4
=2
5
C)
0
50
100
150
200
0.1 Ta = 25C 0.05 0.1 0.2 0.5 1
2
5
10 20
50 100
Ambient Temperature
Ta (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5 4V 3.5 V 3V 2.5 V 3 5 Ta = 25C Pulse Test
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
4
4 3 2 1
Ta = -25C 25C 75C
2
2V
1 VGS = 1.5 V 0 2 4 6 8 10
VDS = 5 V Pulse Test
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source on State Resistance vs. Gate to Source Voltage
0.5
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 2 1 0.5 0.2 0.1 0.05 0.2 4V Ta = 25C Pulse Test 2V VGS = 3 V
Drain to Source on State Resistance RDS (on) ()
0.4
ID = 0.1 A 0.2 A
0.3 0.5 A 1 A Ta = 25C Pulse Test
0.2
0.1
0
1
2
3
4
5
Static Drain to Source on State Resistance RDS (on) ()
0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 5
2SK1579
Static Drain to Source on State Resistance vs. Temperature
1.0 Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
50 VDS = 5 V Pulse Test 20 10 5 Ta = -25C 25C 75C
0.8
0.6
ID = 1 A 0.5 A ID = 0.5 A
VGS = 2 V
0.4
VGS = 4 V
2 1 0.05 0.2
0.2 1A 0 -25 2A 0 25 50 75 100
0.5
1
2
5
10
20
Case Temperature TC (C) Reverse Drain Current vs. Source to Drain Voltage
5 500 Pulse Test
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Drain Current IDR (A)
Coss
Capacitance C (pF)
4
200 Ciss 100 50 Crss
3
2 VGS = 2 V VGS = 0
20 10 5 0.1 VGS = 0 f = 1 MHz 0.2 0.5 1 2 5 10
1
0 0 1.0 2.0
Source to Drain Voltage VSD (V)
Drain to Source Voltage VDS (V)
Switching Characteristics
5,000
Switching Time t (ns)
VGS = 4 V, VDD = 10 V PW = 2 s, Duty cycle = 1% 2,000 1,000 500 tf tr td(on) 0.2 0.5 1 2 5 td(off)
200 100 50 0.05 0.1
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK1579
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name 2SK1579DY 3000 pcs Quantity Shipping Container Taping, 178 mm Reel
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

▲Up To Search▲

Price & Availability of 2SK1579

	To Download 2SK1579 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .