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ST13003-K
High voltage fast-switching NPN power transistor
Features

High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
Application

Electronic ballast for fluorescent lighting (CFL) SMPS for battery charger
SOT-32
3
2
1
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 13003 Package SOT-32 Packaging Bag
Part number ST13003-K
July 2008
Rev 2
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Electrical ratings
ST13003-K
1
Electrical ratings
Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10s) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value 700 400 V(BR)EBO 1.5 3 0.75 1.5 40 -55 to 150 150 Unit V V V A A A A W C C
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Electrical characteristics
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICES V(BR)EBO
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Emitter-Base breakdown voltage (IC = 0) Test conditions VCE =700V VCE =700V IE =10mA TC = 125C 9 400 _ IB = 0.1A 0.5 1 1.5 1 1.2 8 5 20 25 Min. Typ. Max. 1 5 18 Unit mA mA V V V V V V V
Collector-emitter VCEO(sus) (1) sustaining voltage (I = 0) IC =10mA B VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Resistive load tr ts tf Rise time Storage time Fall time Inductive load Storage time IC = 0.5A IC = 1A
_ _ IB = 0.25A IC = 1.5A _ _ IB = 0.5A IC = 0.5A IC = 1A IC =0.5A IC =1A VCC = 125V IB1 = 0.2A Tp = 25s IC = 1A IB1 = 0.2A L =50mH 0.8 _ IB = 0.1A _ _ IB = 0.25A VCE =2V VCE =2V IC = 1A IB2 = -0.2A
VBE(sat) (1) hFE
1 4 0.7
s s s
ts
VBE =-5V VClamp =300V
s
1. Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
ST13003-K
2.1
Electrical characteristics (curves)
Figure 2. Safe operating areas Figure 3. Derating curves
Figure 4.
Output characteristics
Figure 5.
Reverse biased safe operating areas
Figure 6.
DC current gain
Figure 7.
DC current gain
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ST13003-K Figure 8. Collector-emitter saturation voltage Figure 9.
Electrical characteristics Base-emitter saturation voltage
Figure 10. Inductive load switching time Figure 11. Resistive load switching time
2.2
Test circuits
Figure 12. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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Electrical characteristics Figure 13. Inductive load switching test circuit
ST13003-K
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
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Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
ST13003-K
SOT-32 (TO-126) MECHANICAL DATA
DIM. A B B1 D E e e1 L P Q Q1 H2 I 1 2.15 1.27 mm. MIN. 2.4 0.64 0.39 10.5 7.4 2.04 4.07 15.3 2.9 3.8 1.52 2.29 4.58 TYP MAX. 2.9 0.88 0.63 11.05 7.8 2.54 5.08 16 3.2
0016114E
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Revision history
4
Revision history
Table 4.
Date 23-May-2007 09-Jul-2008
Document revision history
Revision 1 2 Initial release. Added Table 1 on page 1. Changes
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ST13003-K
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