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Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 29% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW Output Power Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Designed for Digital Predistortion Error Correction Systems * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S21190HR3 MRF6S21190HSR3 2110 - 2170 MHz, 54 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S21190HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF6S21190HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ CW Value - 0.5, +68 - 0.5, +12 32, +0 - 65 to +150 150 200 175 1 Unit Vdc Vdc Vdc C C C W W/C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 85C, 120 W CW Case Temperature 83C, 56 W CW Symbol RJC Value (1,2) 0.29 0.30 Unit C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MRF6S21190HR3 MRF6S21190HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 420 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 4.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Equivalent Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Cout Ciss -- -- -- 2.8 185 526 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.12 2 2.8 0.21 3 4 0.31 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 54 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 14.5 26 5.5 -- -- 16 29 6.1 - 38 - 13 17.5 -- -- - 35 -8 dB % dB dBc dB MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 2110 - 2170 MHz Bandwidth Video Bandwidth @ 175 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW -- 50 -- frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 54 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 175 W CW Average Group Delay @ Pout = 175 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 175 W CW, f = 2140 MHz Gain Variation over Temperature ( - 30C to +85C) 1. Part internally matched both on input and output. GF Delay G -- -- -- -- -- 0.16 0.52 2.1 28 0.016 -- -- -- -- -- dB ns dB/C MRF6S21190HR3 MRF6S21190HSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS + C8 RF INPUT R1 C7 R2 C6 C3 Z7 Z6 Z1 C1 Z2 Z3 Z4 Z5 Z8 DUT Z9 Z10 Z11 Z12 C2 Z13 C4 C9 C10 + C11 + C12 + C13 VSUPPLY RF OUTPUT + C5 C14 C15 C16 + C17 + C18 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7, Z8 0.744 0.632 0.400 0.042 0.322 0.313 0.123 x 0.084 x 0.084 x 0.450 x 0.580 x 0.580 x 0.040 x 0.121 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 PCB 0.145 x 1.320 Microstrip 0.508 x 0.320 Microstrip 0.429 x 0.279 Microstrip 0.322 x 0.084 Microstrip 0.735 x 0.084 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55 Figure 1. MRF6S21190HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21190HR3(HSR3) Test Circuit Component Designations and Values Part B1 C1, C4, C5 C2 C3 C6 C7, C9, C14 C8 C10, C15 C11, C12, C16, C17 C13, C18 R1 R2 Description Short Ferrite Bead 8.2 pF Chip Capacitors 47 pF Chip Capacitor 10 pF Chip Capacitor 56 pF Chip Capacitor 0.1 F Chip Capacitors 10 F, 50 V Electrolytic Capacitor 10 F Chip Capacitors 22 F Tantalum Capacitors 220 F, 50 V Electrolytic Capacitors 1.0 k, 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number 2743019447 ATC100B8R2JT500XT ATC100B470JT500XT ATC100B100JT500XT ATC100B560JT500XT CDR33BX104AKYS EMVY500ADA100MF55G GRM55DR61H106KA88 T491X226K035AT EMVY500ADA221MJA0G CRCW12061001FKEA CRCW120610R0FKEA Manufacturer Fairrite ATC ATC ATC ATC Kemet Nippon Chemi - Con Murata Kemet Nippon Chemi - Con Vishay Vishay MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor 3 R1 B1 R2 C6 C9 C10 C12 C13 C3 C7 C8 C4 C11 C1 CUT OUT AREA C2 C17 C5 MRF6S21190H/HS Rev. 0 C14 C15 C16 C18 Figure 2. MRF6S21190HR3(HSR3) Test Circuit Component Layout MRF6S21190HR3 MRF6S21190HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS D, DRAIN EFFICIENCY (%) 18.5 18 17.5 Gps, POWER GAIN (dB) 17 16.5 16 15.5 15 14.5 14 13.5 2060 2080 2100 2120 2140 2160 2180 2200 IRL PARC Gps Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) D VDD = 28 Vdc, Pout = 54 W (Avg.), IDQ = 1600 mA 34 32 30 28 26 0 PARC (dB) -0.5 -1 -1.5 -2 -2.5 2220 -4 -8 -12 -16 -20 -24 f, FREQUENCY (MHz) Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 54 Watts Avg. 16.5 Gps, POWER GAIN (dB) 16 15.5 15 14.5 14 Gps D VDD = 28 Vdc, Pout = 86 W (Avg.), IDQ = 1600 mA Single-Carrier W-CDMA, 3.84 MHz Channel Banwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 40 38 36 34 -2 D, DRAIN EFFICIENCY (%) 17 42 PARC (dB) IRL -5 -10 -15 -20 -25 -2.5 -3 -3.5 2080 2100 2120 2140 2160 2180 2200 -4 2220 13.5 PARC 13 12.5 2060 f, FREQUENCY (MHz) Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 86 Watts Avg. 18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA 17 Gps, POWER GAIN (dB) 2000 mA 1600 mA -20 IDQ = 800 mA -30 1200 mA 2400 mA 2000 mA 1600 mA -50 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 16 -40 15 1200 mA 14 800 mA 13 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -20 VDD = 28 Vdc, IDQ = 1600 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -10 VDD = 28 Vdc, Pout = 175 W (PEP), IDQ = 1600 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3-U -30 IM5-U IM5-L -50 IM7-L IM7-U -60 1 10 TWO-TONE SPACING (MHz) 100 IM3-L -30 -20 -40 3rd Order -50 5th Order -60 7th Order -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 -40 Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 -1 -2 -3 D -4 -5 20 -1 dB = 43.79 W -2 dB = 65.39 W -3 dB = 85.07 W Actual Ideal 45 D, DRAIN EFFICIENCY (%) 40 35 30 25 20 15 90 VDD = 28 Vdc, IDQ = 1600 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 30 40 50 60 70 80 Pout, OUTPUT POWER (WATTS) Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power 19 -30_C 18 Gps, POWER GAIN (dB) 17 25_C 16 15 14 13 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1600 mA f = 2140 MHz 100 85_C 25_C TC = -30_C 85_C 60 50 D, DRAIN EFFICIENCY (%) 40 30 20 10 0 200 Gps, POWER GAIN (dB) 17 Gps 16 32 V 28 V 15 14 IDQ = 1600 mA f = 2140 MHz 13 0 100 Pout, OUTPUT POWER (WATTS) CW 200 VDD = 24 V D Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21190HR3 MRF6S21190HSR3 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 54 W Avg., and D = 29%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -10 -20 -30 -40 -50 -60 3.84 MHz Channel BW PEAK-TO-AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal Figure 14. Single - Carrier W - CDMA Spectrum MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor 7 f = 2220 MHz Zo = 10 Zload f = 2060 MHz Zsource f = 2220 MHz f = 2060 MHz VDD = 28 Vdc, IDQ = 1600 mA, Pout = 54 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 7.001 - j7.706 6.859 - j7.408 6.710 - j7.052 6.573 - j6.707 6.446 - j6.355 6.339 - j5.987 6.251 - j5.653 6.170 - j5.272 6.138 - j4.974 Zload W 2.628 + j0.118 2.602 + j0.415 2.604 + j0.672 2.566 + j0.901 2.536 + j1.175 2.538 + j1.411 2.547 + j1.654 2.533 + j1.892 2.508 + j2.119 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21190HR3 MRF6S21190HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A (FLANGE) T A SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE D NI - 880 MRF6S21190HR3 B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF6S21190HSR3 MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Feb. 2008 Mar. 2008 * Initial Release of Data Sheet * Added Fig. 12, MTTF versus Junction Temperature, p. 7 Description MRF6S21190HR3 MRF6S21190HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved. MRF6S21190HR3 MRF6S21190HSR3 Document Number: RF Device Data MRF6S21190H Rev. 1, 3/2008 Freescale Semiconductor 11 |
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