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| FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11444-2E 256 Mbit Mobile FCRAM 1.8 V, DDR Burst Mode MB82DDS08314A-75L FEATURES * * * * * * * TM * Pseudo SRAM with Double Data Rate (DDR) Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 4 DDR Burst Mode Function Multiplexed Address and Data Bus Short Initial Latency High-speed Data Transfer Rate Various Power Down Mode Sleep 32 Mbit Partial 64 Mbit Partial 128 Mbit Partial Shipping Form : Wafer and Chip MAIN SPECIFICATIONS Part Number Organization I/O Bus Configuration Interface Supply Voltage Burst Frequency (Max.) Data Transfer Rate _______ MB82DDS08314A-75L 8 M WORD x 32 BIT x 32 Multiplexed Address and Data Bus Double Data Rate (DDR) 1.75 V to 1.95 V 135 MHz 1G byte / s 6 ns 40 mA 250 A Sleep 10 A Data Access Time from CLK & CLK (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright(c)2006-2007 FUJITSU LIMITED All rights reserved |
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