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CHA3511
RoHS COMPLIANT
6-18GHz Amplifier
GaAs Monolithic Microwave IC Description
The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a PowerHEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
E2
RF IN
AB
RF OUT
F
DC
Typical on wafer Measurements Gain versus switch states
30 20
Main Features
Wide Band: 6-18GHz
16dB gain 39dB isolation 22 dBm saturated output power DC power consumption, 190mA@ 4.5V Chip size: 3.55 x 2.30 x 0.1 mm
dBS21 (dB)
10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz
Main Characteristics
Tamb. = 25 C Symbol Fop G ISO Psat Parameter Operating frequency range Small signal gain @ Switch on Delta Gain (1) Saturated Output power @Switch on Min 6 15 35 20 Typ 16 39 22 Max 18 Unit GHz dB dB dBm
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA35116286 - 13 Oct 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3511
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25 C Vd (Pads D & B)= 4.5V, Vg (Pads A & C) tuned for Id= 190mA Configuration Gain:E2=-5V; F=0V Configuration isolation: E2=0V; F=-5V
Symbol Fop G ISO P1dB Psat
Parameter Operating frequency range (1) Small signal gain @ Config Gain Delta Gain between config Gain & config. Isolation Output power at 1dB compression @ Config. Gain Saturated Output power @ config. gain Noise figure @ Config. Gain
Min 6
Typ
Max 18
Unit GHz dB dB dBm dBm
16 35 18 20 39 20 22
NF
6-12 GHz 12-18 GHz
6 8 2.3:1 2.0:1 4.5 190 -5/0
8 10
dB dB
VSWRin VSWRout Vd Id Vc
Input VSWR @Config gain Output VSWR @Config. gain Drain bias DC voltage (Pads D,B) Bias current @ small signal Control voltage for Attenuator bits
V 250 mA V
Ref. : DSCHA35116286 - 13 Oct 06
2/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
CHA3511
Absolute Maximum Ratings
Tamb. = 25 (1) C Symbol Vd Id Vg Vc Parameter Maximum Drain bias voltage ( Pads B,D) Drain bias current with Vd=4.5V Gate bias voltage (Pads A, C) Fet switch gate voltage (2) SPST switch control voltage Pin Tch Ta Tstg Maximum input power overdrive (3) Maximum channel temperature Operating temperature range Storage temperature range Values +5 300 -2 to +0.4 -7 to +0.6 +20 +175 -40 to +70 -55 to +125 Unit V mA V V dBm C C C
(1)Operation of this device above anyone of these parameters may cause permanent
damage. (2)The switch is ON in the following condition : Pad F=0V & Pad E2=-5V; the switch is OFF when pad F=-5V & PAD E2=0V (2) Duration < 1s.
Circuit Biasing Conditions
Drain Voltage on B and D pads=4.5V Gate voltage adjusted on A and C pads for a drain current =190mA
SPST Control E2 -5V 0V F 0V -5V
Configuration selected
1: Gain 2: Isolation
Ref. : DSCHA35116286 - 13 Oct 06
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3511
6-18GHz Digital Variable Amplifier
Typical chip on wafer Sij parameters for reference state
Tamb 25 C,Bias conditions:Vd(Pads B&D)=4.5V, Vg(Pad s A & C) tuned for Id=190mA Configuration Gain:Pad E2=-5V / pad F=0V
Freq (GHz) S11(dB) PhS11( ) S12(dB) PhS12( ) S21(dB) PhS2 1( ) S22(dB) PhS22( )
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20.0
-9.5 -12.0 -14.3 -15.7 -16.0 -14.4 -12.2 -10.5 -9.2 -8.7 -9.2 -11.0 -14.0 -15.9 -14.1 -10.5
154.9 129.9 107.7 81.9 48.4 5.8 -34.4 -68.9 -99.1 -126.1 -154.5 -175.5 170.8 -172.9 170.8 102.1
-66.3 -69.6 -62.6 -59.2 -56.1 -54.0 -52.6 -51.6 -49.8 -49.8 -43.5 -43.8 -45.2 -45.7 -40.8 -44.2
146.8 123.3 21.1 -14.4 -85.3 -109.4 -157.0 163.8 150.9 126.6 103.0 37.7 -31.4 -156.6 110.8 -9.5
15.2 16.3 17.1 17.4 17.4 16.9 16.4 15.8 15.8 16.1 16.5 17.1 18.7 20.3 19.3 6.6
-67.3 -129.1 173.2 118.0 64.6 12.9 -35.8 -81.7 -125.7 -170.8 139.9 91.8 39.0 -30.3 -110.4 94.2
-10.7 -13.3 -15.0 -16.9 -17.8 -18.3 -18.6 -18.1 -17.3 -16.3 -17.2 -19.4 -17.0 -17.4 -14.6 -9.7
174.1 157.1 140.2 122.9 103.3 69.8 29.4 -18.3 -70.0 -125.6 163.7 78.6 -14.5 -87.5 -78.7 159.7
Typical on wafer Measurements @ 25 C
Bias conditions:Vd(Pads B&D)=4.5V, Vg(Pads A & C) tuned for Id=190mA Configuration Isolation:Pad E2=0V / pad F=-5V
Freq (GHz) S11(dB) PhS11( ) S12(dB) PhS12( ) S21(dB) PhS21( ) S22(dB ) PhS22( )
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0
-1.2 -1.3 -1.4 -1.5 -1.6 -1.7 -1.8 -1.9 -2.0 -2.0 -2.1 -2.2 -2.3 -2.3 -2.4 -2.5 -2.5
149.2 142.1 134.8 127.3 119.7 112.0 104.0 95.9 87.6 78.5 69.3 59.6 49.7 39.4 29.2 19.0 8.8
-71.2 -72.9 -75.1 -77.2 -66.2 -70.9 -65.9 -57.7 -54.0 -50.2 -45.3 -48.2 -49.3 -53.6 -50.9 -52.7 -58.2
4/10
128.5 -158.1 -69.3 68.3 -152.4 -152.7 153.0 163.6 164.6 132.6 85.4 39.2 9.4 9.2 10.9 -40.9 -10.3
-33.8 -32.0 -31.7 -31.8 -33.2 -36.2 -36.6 -37.9 -38.5 -36.6 -33.8 -30.4 -26.3 -23.0 -20.3 -24.1 -34.6
176.0 118.9 64.8 17.7 -30.2 -83.2 -135.5 159.1 97.6 40.5 -22.5 -79.1 -136.8 158.2 76.0 -17.5 -86.3
-10.7 -13.2 -15.0 -16.9 -17.8 -18.6 -18.9 -18.8 -18.0 -17.5 -18.1 -19.7 -17.9 -16.0 -14.2 -8.4 -9.6
174.1 156.8 139.7 122.8 103.0 69.1 30.0 -18.0 -67.5 -119.7 -178.3 101.3 7.2 -65.9 -85.3 -143.6 159.3
Ref. : DSCHA35116286 - 13 Oct 06
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
Typical on wafer Measurements @ 25 C
Bias conditions:Vd(Pads B&D)=4.5V, Vg(Pads A & C) tuned for Id=190mA
CHA3511
Configuration Gain ( Pad E2=-5V/ Pad F=0V) Gain/ input & output Return Loss
25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 1 3 5
0 -5
S21 (dB)
S11 (dB) S22 (dB)
-10 -15 -20 -25 -30 -35
7
9
11
13
15
17
19
21
FREQUENCY (GHz)
Configuration Isolation ( Pad E2=-0V/ Pad F=-5V) Isolation/ input & output Return Loss
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 1 3 5 0
S11 (dB) S21 (dB)
-10 -15 -20
S22 (dB)
-25 -30 -35
7
9
11
13
15
17
19
21
Frequency (GHz)
Ref. : DSCHA35116286 - 13 Oct 06 5/10 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Input/Outout Return Loss (dB)
-5
dBS21 (dB)
Input/Output Return Loss (dB)
dBS21(dB)
CHA3511
6-18GHz Digital Variable Amplifier
Typical test fixture Measurements
Bias conditions: Vd ( Pads B & D)=4.5V, Vg( Pads A & C) tuned for Id = 190mA Configuration Gain: Pad=E2=-5V/Pad F=0V
S Parameters: test fixture measurements Measurements versus temperature
30 20 10
60 55
Isolation (dB)
0 S21(dB) -10 -20 -30 -40 -50 -60 2
Gain(switch on) : Config. Gain Gain(switch off) : Config. Isolation
50 45 40 35 30
Isolation(Config.Gain-Config.Isolation)
ISO(25 deg) ISO(-40deg C) ISO(+70 deg C)
dBS21(25 degC) dBS21(-40 deg C) dBS21(+70 deg C) dBS21(25 degC) 4 6 8 10 12 14 16 18 20
25 20 2
4
6
8
Frequency GHz
10 12 14 Frequency GHz
16
18
20
0 -2 -4 -6 S11(dB) -8 -10 -12 -14 -16 -18 -20 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) dBS11(25deg C) dBS11(-40 deg C) dBS11(+ 70 deg C)
0
Input return Loss (dB)
-2 -4 -6 -8 -10 S22(dB) -12 -14 -16 -18 -20 -22 -24 -26 2 4 6 dBS22(25 deg C) dBS22(-40 deg C)
Output return Loss (dB)
dBS22(+70 deg C) 8 10 12 14 16 18 20
Frequency (GHz)
Tamb=+25 C
15 14 13 12 11 10 9 8 7 6 5 4 4
Noise Figure: test fixture measurements
Noise Figure (dB)
NF
6
8
10 12 14 Frequency (GHz)
6/10
16
18
20
Ref. : DSCHA35116286 - 13 Oct 06
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
CHA3511
Tamb=+25 C (configuration Gain)
Linear Gain & Output Power for 1 dB compression Versus frequency Test fixture measurement
26 24 Gain(dB)/P-1dB(dBm)
Pout-1dB (dBm)
22 20 18 16 14 6 8 10 12 14 Frequency (GHz) 16 18
Linear Gain(dB)
Gain and Output power Versus input power & Frequency Test fixture measurement
24 Gain(dB) & Output Power (dBm) 22 20 18 16 14 12 10 8 -10 -8 -6 -4 -2 0 2 4 Input power (dBm) 6 8 10
6GHz 12GHz 18GHz
Consumption versus Input power & frequency Test fixture measurement
Ref. : DSCHA35116286 - 13 Oct 06
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3511
6-18GHz Digital Variable Amplifier
Chip Assembly and Mechanical Data
To Vd2 DC Drain Supply To Vg1 DC gate Supply
10nF
Switch command
*
E2 A
120pF
Input/Output bonding wires as short as possible
Input/Output bonding wires as short as possible
F
120pF
C
Switch command
10nF
To Vd1 DC Drain Supply
* The Pad E can be used in place of the Pad E2
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Recommended circuit bonding table
Label
B D A C E2 F
Type
Vd Vd Vg Vg Vc Vc
Decoupling
120pF / 10nF 120pF / 10nF Not required Not required Not required Not required
Comment
Drain Supply Drain Supply Gate Supply Gate Supply Switch control Switch control
Ref. : DSCHA35116286 - 13 Oct 06
8/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
Bonding pad positions
1935 1045 845 140
CHA3511
130
2300
2085
1530
245
235 170
235 1190 2580 3550
TOL :35m
( Chip thickness : 100m ; All dimensions are in micrometers)
Ref. : DSCHA35116286 - 13 Oct 06
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
765
CHA3511
6-18GHz Digital Variable Amplifier
Ordering Information
Chip form : CHA3511-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA35116286 - 13 Oct 06
10/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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