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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT Module 4MBI150T-060 MS5F 05550
Fuji Electric Co.,Ltd. Matsumoto Factory
Aug 27 '03 K.Muramatsu Aug 27 '03 T.Miyasaka T.Fujihira K.Yamada
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Revised Records
Date Classification Ind. Content Applied date Issued date Drawn Checked Approved
Aug-27-'03
enactment
T.Miyasaka T.Fujihira K.Yamada
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4MBI150T-060
1. Outline Drawing ( Unit : mm )
(
) shows reference dimension.
2. Equivalent circuit [Inverter]
21,22 13 14 U 5,6 17 18 V 2,3
[Thermistor]
8 9
15 16
19 20 1,24
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3. Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Ic Ic pulse IF IF pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage(*1) Pc Tj Tstg Viso
(*2)
Conditions Ic=1mA Duty=100 % 1ms Duty=60 % 1ms 1 device
Maximum Ratings 600 20 150 300 150 300 430 150 -40~ +125
Units V V A
W V Nm
AC : 1min.
2500 3.5
Mounting Screw Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 N m (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbols ICES IGES VGE = VCE = Conditions 0 V, 0 V, 20 V, VCE = VGE = Ic = 600 V 20 V 150 mA Tj = 25 15 V 150 A 0V 10 V 1 MHz 300 V 150 A 15 V 24 Tj = 25 150 A Tj = 125 Tj = 25 Tj = 125 IF = 150 A Tj = 125 Tj = 25 Tj = 125
VGE =
Characteristics min. 6.2 85 465 3305 typ. 6.7 2.25 2.5 1.85 2.1 11500 2050 1700 0.4 0.2 0.1 0.5 0.05 2.2 2.1 1.8 1.7 5000 495 3375 Max. 1.0 200 7.7 2.60 1.2 0.6 1.2 0.45 2.65 0.35 520 3450
Units mA nA V
VGE(th) VCE =
VCE(sat) (Terminal) VGE = VCE(sat) Ic = (Chip)
V
Cies Coes Cres ton tr tr(i) toff tf VF
VCE = f= Vcc = Ic = VGE = RG =
pF
Inverter
s
Forward on voltage
(Terminal) IF =
VF
(Chip)
V
Reverse recovery time Allowable avalance energy during short curcuit cuting off (Non-repetitive)
Thermisitor
trr PAV R B
s mJ
Ic > 400A, Tj = 125 T = 25 T = 100 T = 25/50
Resistance B value
K
5. Thermal resistance characteristics Items Thermal resistance (1 device) Contact Thermal resistance (1 device) Symbols Rth(j-c) Rth(c-f) IGBT FWD Conditions Characteristics min. typ. 0.05 Units Max. 0.29 0.64 / -
With thermal compound * * This is the value which is defined mounting on the additional cooling fin with thermal compound.
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6. Indication on module
4MBI150T-060
150A 600V
Lot No.
Place of manufucturing
7. Applicable category This specification is applied to IGBT Module named 4MBI150T-060. 8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when tranporting.
9. Definitions of switching time

90%
0V
L
0V V GE trr Irr
90%

VCE
Vcc
Ic
90%
RG V GE
VCE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
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10. Definition of the allowable avalance energy during short circuit cutfing off.
-VCEP 1 2
PAV= IC -ICP
xVCEPxICPxtf(SC)
VCE
tf(SC)
11. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box
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12. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration Test methods and conditions Pull force : 20N Test time : 101 sec. Screw torque : 2.5 ~ 3.5 Nm (M5) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 200m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 2355 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 2605 Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Atmospheric pressure : 1.7 x 105 Pa Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
Reference AcceptNumber norms ance EIAJ ED-4701 of sample number (Aug.-2001 edition)
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
5 5 5
(0:1) (0:1) (0:1)
Mechanical Tests
4 Shock
Test Method 404 Condition code B
5
(0:1)
5 Solderabitlity
Test Method 303 Condition code A
5
(0:1)
6 Resistance to Soldering Heat
Test Method 302 Condition code A
5
(0:1)
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
Test Method 105
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Test Method 307
5
(0:1)
method Condition code A
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Endurance Tests Tests Endurance
Test duration 2 High temperature Test temp. Bias (for gate) Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failu r e Cr iter ia
Item Elec tric al c harac teris tic C haracteris tic Leakage current Gate thres hold voltage Saturation voltage Forward voltage Therm al IGBT res is tance FW D Isolation voltage Vis ual inspection Vis ual inspection Peeling Plating and the others LSL : Low er specified lim it. USL : Upper s pec ified lim it. Note : Eac h param eter m eas urem ent read-outs s hall be m ade after s tabiliz ing the c om ponents at room am bient for 2 hours m inim um , 24 hours m axim um after rem oval from the tes ts . And in c as e of the wetting tes ts , for exam ple, m ois ture resis tance tes ts, eac h c om ponent s hall be m ade w ipe or dry com pletely before the m easurem ent. The vis ual s am ple or Sym bol ICES IGES VGE(th) VCE(s at) VF VGE VC E VF Viso USLx1.2 mV Broken ins ulation Failure c riteria Lower lim it Upper lim it LSLx0.8 USLx 2 USLx 2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 Unit mA A mA V V mV Note
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Reliability Test Results
Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
Mechanical Tests
1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage
5 5 5 5 5 5 5 5 5 5 5 5
0 0 0 0 0 0 0 0 0 0 0 0
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock
Endurance Tests Endurance Tests
1 High temperature Reverse Bias Test Method 101 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
5 5 5 5
0 0 0 0
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400
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.)
400
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.)
350
VGE= 20V 15V
300
VGE= 20V 12V
300
15V 12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
250
10V
200
10V
200
150
100
100
8V
0 0 1 2 3 4 5
50
8V
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
400
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
12
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.)
300
Collector - Emitter voltage : VCE [ V ]
Tj= 25C Tj= 125C
10
Collector current : Ic [ A ]
8
200
6
4
100
2
Ic=300A Ic=150A Ic=75A
0 0 1 2 3 4 5
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
50000
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
500
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25C
25
Capacitance : Cies, Coes, Cres [ pF ]
10000 5000
300
15
1000
200
10
Coes Cres
100
5
100 0 5 10 15 20 25 30 35
0 0 100 200 300 400 500 600 700
0 800
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
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Gate - Emitter voltage : VGE [ V ]
Cies
Collector - Emitter voltage : VCE [ V ]
400
20
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=24ohm, Tj= 25C
ton toff
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg= 24ohm, Tj= 125C
ton toff
Switching time : ton, tr, toff, tf [ nsec ]
tr
100
Switching time : ton, tr, toff, tf [ nsec ]
tr
100
tf
tf
10 0 100 200 300
10 0 100 200 300
Collector current : Ic [ A ]
Collector current : Ic [ A ]
5000
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=+-15V, Tj= 25C
15
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=24ohm
Eon(125C)
1000
ton toff tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
10
Eon(25C) Eoff(125C) Eoff(25C)
100
tf
5
Err(125C)
Err(25C)
0
10 5 10 100
0
100
200
300
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
40
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=+-15V, Tj= 125C
Eon
400
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=24ohm, Tj<=125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
30
300
20
Collector current : Ic [ A ]
300
200
Eoff
10
100
0 10 100
Err
0 0 200 400 600 800
Gate resistance : Rg [ ohm ]
Collector - Emitter voltage : VCE [ V ]
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[ Inverter ] Forward current vs. Forward on voltage (typ.)
400 200
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=24ohm
trr(125C)
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
300
100
trr(25C) Irr(125C) Irr(25C)
Forward current : IF [ A ]
200
Tj=125C Tj=25C
100
0 0 1 2 3
10 0 100 200 300
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
2 1
FWD
Thermal resistanse : Rth(j-c) [ C/W ]
IGBT
0.1
0.01
1E-3 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
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Warnings
This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. Use this product within the power cycle curve (Technical Rep.No. : MT6M4057) (No.: MT6M4057) Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 100mm100um10um It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOA RBSOA If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE -VGE : -VGE = -15V) In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG
-
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Cautions
- Fuji Electric is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
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