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2SK3136
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1068-0400 (Previous: ADE-208-696B) Rev.4.00 Sep 20, 2005
Features
* Low on-resistance RDS(on) =4.5 m typ. * Low drive current * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK3136
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Ratings 40 20 75 300 75 50 333 100 150 -55 to +150 Unit V V A A A A mJ W C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 -- -- 1.0 -- -- 50 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.5 6.5 80 6800 1300 380 130 25 30 60 300 550 400 1.05 90 Max -- 0.1 10 2.5 5.8 10 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 40 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 40 A, VGS = 10 V Note 4 ID = 40 A, VGS = 4 V Note 4 ID = 40 A, VDS = 10 V Note 4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 75 A VGS = 10 V, ID = 40 A, RL = 0.75
IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/ dt = 50 A/s
Rev.4.00 Sep 07, 2005 page 2 of 7
2SK3136
Main Characteristics
Power vs. Temperature Derating
200 1000 300
0 s s 1 m s
10
Maximum Safe Operation Area
10
Channel Dissipation Pch (W)
Drain Current ID (A)
150
100 30 10 3 1 0.3
100
= 10 DC ms Op (1 s e (T rati hot) c = on 25 Operation in C ) this area is
PW
50
limited by RDS(on)
0
50
100
150
200
0.1 Ta = 25C 0.1 0.3 1
3
10
30
100
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100 4V 3.5 V 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
5V 60
VGS = 10 V
Pulse Test
Drain Current ID (A)
80
80
60
40
3V
40
75C 25C Tc = -25C
20 2.5 V 0 2 4 6 8 10
20
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
0.5 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100
Static Drain to Source on State Resistance RDS (on) (m)
Pulse Test
50
0.4
0.3 ID = 50 A 0.2 20 A 10 A 0 4 8 12 16 20
20 10 5 VGS = 4 V
10 V
2 1
0.1
1
3
10
30 100
300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 3 of 7
2SK3136
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
20 Pulse Test 16 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 25C 75C Tc = -25C
VDS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
12
VGS = 10 V
ID = 50 A 10, 20 A 10, 20, 50 A
8
4 0 -50
4V 0 50
100
150
200
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 30000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
Capacitance C (pF)
10000
Ciss
3000 1000 Coss Crss
300 100 0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 75 A
VGS
Switching Characteristics
Gate to Source Voltage VGS (V)
20 1000 500
td(off) tf tr td(on)
100
80
VDD = 40 V 25 V 10 V
16
Switching Time t (ns)
200 100 50 20
60
VDS
12
40
8
20
VDD = 40 V 25 V 10 V
4 0 400
0
80
160
240
320
10 0.1 0.2 0.5 1
VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 %
2
5 10 20
50 100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 7
2SK3136
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
100 10 V 80 5V 60
VGS = 0, -5 V
500
IAP = 50 A VDD = 25 V duty < 0.1 % Rg > 50
Reverse Drain Current IDR
400
300
40
200
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
100 0 25
50
75
100
125
150
Source to Drain Voltage
VSDF (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu ho 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Avalanche Test Circuit
VDS Monitor L
PW (S) Avalanche Waveform
EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP
IAP Monitor Rg D. U. T VDD ID Vin 15 V 50 VDD VDS
0
Rev.4.00 Sep 07, 2005 page 5 of 7
2SK3136
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 50 10% 10% 10% Vout Monitor
Switching Time Waveforms
90%
Rev.4.00 Sep 07, 2005 page 6 of 7
2SK3136
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK3136-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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