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2SC5773
Silicon NPN Epitaxial UHF / VHF wide band amplifier
REJ03G0756-0300 Rev.3.00 May 09, 2006
Features
* High gain bandwidth product fT = 10.8 GHz typ. * High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Note: Marking is "JR-".
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg * When using aluminum ceramic board (25 x 60 x 0.7 mm) Ratings 15 6 1.5 80 700* 150 -55 to +150 Unit V V V mA mW C C
This data sheet contains tentative specification for new product development. It may partially be subject to change without notice.
Rev.3.00 May 09, 2006 page 1 of 10
2SC5773
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Reverse transfer capacitance Gain bandwidth product S21 parameter Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob Cre fT |S21|2 PG NF Min 15 -- -- -- 80 -- -- 8 -- 9 -- Typ -- -- -- -- 120 1.25 0.98 10.8 11 11.9 1.1 Max -- 1 1 10 160 1.8 -- -- -- -- 1.9 Unit V A mA A pF pF GHz dB dB dB Test Conditions IC = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 6 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 50 mA VCB = 5 V, IE = 0 f = 1 MHz VCB = 5 V, IE = 0 f = 1 MHz VCE = 5 V, IC = 50 mA f = 1 GHz VCE = 5 V, IC = 50 mA f = 1 GHz VCE = 5 V, IC = 50 mA f = 900 MHz VCE = 5 V, IC = 5 mA f = 900 MHz
Rev.3.00 May 09, 2006 page 2 of 10
2SC5773
Main Characteristics
Collector Power Dissipation Curve
Pc (mW) hFE
800
When using aluminum ceramic board S = 25 mm X 60 mm, t = 0.7 mm
DC Current Transfet Ratio vs. Collector Current
200
Collector Power Dissipation
600
DC Current Transfer Ratio
VCE = 5 V 100 3V
400
200
0 0 50 100 150 200 1 2 5 10 20 50 100
Ambient Temperature
Ta (C)
Collector Current
IC
(mA)
Collector Output Capacitance vs. Collector to Base Voltage
(pF)
4.0 IE = 0 f = 1 MHz 3.2
Gain Bandwidth Product vs. Collector Current
(GHz) Gain Bandwidth Prodfuct fT
20
Cob
16 VCE = 5 V
Collector Output Capacitance
2.4
12
1.6
8
3V
0.8 0 0.1
4 0 1 2 5 10 20 50 100
0.2
0.5
1
2
5
10
Collector to Base Voltage
VCB
(V)
Collector Current
IC
(mA)
Power Gain vs. Collector Current
20 f = 900 MHz 16 VCE = 5 V 12 3V 8 5
Noise Figure vs. Collector Current
f = 900 MHz
NF (dB)
(dB)
4
PG
3 VCE = 3 V 2 5V 1 0
Power Gain
4 0 1
2
5
10
20
50
100
Noise Figure
1
2
5
10
20
50
100
Collector Current
IC
(mA)
Collector Current
IC
(mA)
Rev.3.00 May 09, 2006 page 3 of 10
2SC5773
S21 Parameter vs. Collector Current
20 f = 1 GHz
|S21|2 (dB)
16 VCE = 5 V 3V 8
12
S21 Parameter
4 0 1 2 5 10 20 50 100
Collector Current
IC (mA)
Rev.3.00 May 09, 2006 page 4 of 10
2SC5773
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2
S21 Paramter vs. Frequency
90 120
Scale: 8 / div.
60
-150
-30
Condition: VCE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA) ( IC = 10 mA)
Condition: VCE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA) ( IC = 10 mA)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.08 / div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1
-5 -4 -3
Condition: VCE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA) ( IC = 10 mA)
Condition: VCE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA) ( IC = 10 mA)
Rev.3.00 May 09, 2006 page 5 of 10
2SC5773
S21 Paramter vs. Frequency
90 2 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 120
S11 Parameter vs. Frequency
.8 .6 1 1.5
Scale: 8 / div.
60
-150
-30
Condition: VCE = 5 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA)
Condition: VCE = 5 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA)
S12 Parameter vs. Frequency
90 120
Scale: 0.08 / div.
60 .4
S22 Parameter vs. Frequency
.8 .6 1 1.5 2 3
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1
-5 -4 -3
Condition: VCE = 5 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA)
Condition: VCE = 5 V, Zo = 50 100 to 2000 MHz (100 MHz Step) ( IC = 50 mA) ( IC = 30 mA)
Rev.3.00 May 09, 2006 page 6 of 10
2SC5773
Sparameter
(VCE = 3 V, IC = 10 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.643 0.532 0.496 0.475 0.471 0.468 0.468 0.464 0.467 0.465 0.468 0.477 0.478 0.479 0.483 0.486 0.490 0.489 0.492 0.497 ANG -68.8 -112.2 -135.9 -150.6 -160.9 -168.0 -174.7 179.4 174.7 169.9 166.5 162.7 159.2 155.7 152.8 149.7 146.0 143.6 140.7 137.9 MAG 21.09 13.52 9.42 7.19 5.80 4.88 4.21 3.71 3.30 3.00 2.75 2.55 2.38 2.23 2.10 1.98 1.89 1.80 1.73 1.67 S21 ANG 137.1 114.6 103.2 96.2 91.1 87.0 83.2 79.9 77.0 74.1 71.6 69.1 66.6 64.4 62.2 59.9 58.0 55.9 54.1 51.9 MAG 0.042 0.061 0.073 0.085 0.097 0.109 0.121 0.134 0.148 0.161 0.174 0.188 0.201 0.215 0.227 0.242 0.255 0.268 0.281 0.292 S12 ANG 60.3 51.4 51.7 53.9 56.1 57.8 59.5 60.8 61.7 62.2 62.5 62.9 62.7 62.7 62.8 62.4 62.2 61.8 61.3 60.8 MAG 0.740 0.487 0.355 0.288 0.250 0.225 0.210 0.199 0.193 0.187 0.185 0.184 0.182 0.182 0.183 0.185 0.186 0.187 0.190 0.192 S22 ANG -47.5 -74.5 -90.4 -100.9 -109.7 -116.6 -122.2 -126.8 -131.1 -134.2 -137.4 -139.9 -142.2 -144.0 -146.1 -147.5 -149.0 -150.8 -152.1 -152.9
(VCE = 3 V, IC = 30 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.449 0.445 0.449 0.456 0.454 0.451 0.455 0.458 0.462 0.455 0.463 0.469 0.465 0.471 0.477 0.477 0.473 0.483 0.479 0.482 ANG -112.7 -148.0 -163.2 -171.8 -178.9 176.4 171.6 167.4 163.5 160.3 156.4 153.6 150.9 147.1 144.9 142.5 138.9 136.9 133.8 131.3 MAG 29.89 16.17 10.77 8.08 6.47 5.42 4.65 4.09 3.65 3.32 3.02 2.80 2.61 2.45 2.30 2.17 2.08 1.98 1.90 1.84 S21 ANG 120.9 103.3 95.7 90.8 87.2 83.9 81.1 78.4 76.0 73.5 71.6 69.1 67.3 65.3 63.3 61.2 59.5 57.7 55.9 53.8 MAG 0.029 0.044 0.059 0.075 0.092 0.108 0.124 0.141 0.158 0.173 0.190 0.205 0.220 0.236 0.251 0.268 0.282 0.296 0.311 0.322 S12 ANG 59.9 62.6 66.4 68.8 70.0 71.0 71.0 70.9 70.6 70.1 69.7 69.0 68.1 67.6 66.8 66.0 65.2 64.0 63.3 62.3 MAG 0.534 0.336 0.269 0.242 0.230 0.223 0.219 0.216 0.216 0.214 0.215 0.215 0.214 0.216 0.216 0.217 0.218 0.219 0.220 0.220 S22 ANG -74.7 -106.4 -124.9 -136.3 -144.6 -150.6 -155.1 -158.9 -161.6 -164.2 -166.5 -168.1 -170.0 -171.3 -172.5 -173.9 -174.8 -175.5 -176.5 -177.2
Rev.3.00 May 09, 2006 page 7 of 10
2SC5773 (VCE = 3 V, IC = 50 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.421 0.437 0.448 0.449 0.461 0.455 0.459 0.463 0.465 0.464 0.467 0.468 0.467 0.475 0.477 0.482 0.480 0.485 0.481 0.484 ANG -130.8 -159.1 -169.5 -177.1 177.1 173.0 168.3 164.8 161.9 158.2 154.9 152.0 148.7 145.2 143.4 141.3 137.3 135.5 132.8 129.6 MAG 31.68 16.57 10.94 8.18 6.57 5.48 4.71 4.15 3.68 3.35 3.07 2.83 2.64 2.47 2.33 2.20 2.11 2.01 1.92 1.85 S21 ANG 116.2 100.7 93.9 89.5 86.2 83.2 80.5 78.1 75.9 73.3 71.3 69.3 67.2 65.2 63.5 61.4 59.7 57.8 56.1 54.4 MAG 0.025 0.040 0.058 0.075 0.092 0.109 0.126 0.143 0.161 0.177 0.193 0.210 0.225 0.241 0.257 0.273 0.288 0.303 0.318 0.330 S12 ANG 62.9 67.3 71.0 72.9 73.4 73.7 73.5 73.0 72.6 71.9 70.8 70.2 69.0 68.4 67.5 66.5 65.6 64.6 63.7 62.6 MAG 0.468 0.308 0.261 0.243 0.236 0.232 0.230 0.229 0.229 0.228 0.229 0.229 0.229 0.230 0.230 0.231 0.232 0.232 0.234 0.232 S22 ANG -84.7 -117.4 -135.2 -145.5 -152.5 -158.0 -161.8 -164.9 -167.4 -169.6 -171.7 -173.2 -174.7 -175.7 -177.1 -178.2 -179.0 -179.9 179.0 178.6
Rev.3.00 May 09, 2006 page 8 of 10
2SC5773 (VCE = 5 V, IC = 30 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.447 0.419 0.416 0.414 0.421 0.419 0.418 0.426 0.425 0.423 0.428 0.432 0.429 0.436 0.437 0.447 0.445 0.450 0.447 0.453 ANG -102.8 -142.1 -158.2 -168.7 -176.4 178.3 173.3 168.4 165.9 161.7 157.9 154.3 151.6 148.6 145.5 143.3 140.2 137.2 134.6 131.5 MAG 31.04 17.16 11.49 8.63 6.92 5.79 4.98 4.37 3.89 3.53 3.23 2.98 2.79 2.60 2.45 2.31 2.20 2.09 2.01 1.94 S21 ANG 123.3 105.0 96.8 91.7 88.0 84.8 81.8 79.3 76.6 74.2 72.1 70.0 67.9 66.1 64.1 61.9 60.1 58.5 56.3 54.7 MAG 0.028 0.042 0.057 0.072 0.088 0.103 0.119 0.135 0.151 0.166 0.181 0.196 0.211 0.226 0.240 0.256 0.270 0.283 0.298 0.309 S12 ANG 60.6 62.5 66.4 69.2 70.2 70.9 70.9 70.9 70.7 70.5 69.8 69.3 68.4 67.9 67.0 66.3 65.8 64.5 63.8 62.8 MAG 0.552 0.333 0.250 0.214 0.196 0.185 0.179 0.174 0.173 0.171 0.171 0.171 0.170 0.171 0.172 0.173 0.174 0.174 0.177 0.177 S22 ANG -66.3 -94.7 -112.0 -123.3 -132.1 -138.6 -144.0 -148.5 -151.8 -154.9 -157.2 -159.2 -161.5 -162.7 -163.9 -165.5 -166.5 -167.8 -168.6 -169.4
(VCE = 5 V, IC = 50 mA, Zo = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.402 0.406 0.414 0.413 0.417 0.419 0.419 0.423 0.427 0.423 0.428 0.428 0.435 0.434 0.443 0.447 0.444 0.451 0.445 0.454 ANG -120.1 -152.6 -166.1 -174.2 179.5 174.7 169.9 166.2 161.6 158.2 154.7 152.5 148.6 145.2 143.0 140.4 137.3 134.1 132.1 129.3 MAG 33.23 17.68 11.71 8.78 7.03 5.88 5.05 4.44 3.94 3.58 3.27 3.02 2.82 2.65 2.48 2.35 2.24 2.13 2.05 1.96 S21 ANG 118.6 102.1 95.0 90.4 87.0 84.0 81.3 78.7 76.4 73.9 71.9 70.0 67.8 65.9 64.2 62.1 60.4 58.6 56.7 54.9 MAG 0.024 0.039 0.055 0.072 0.088 0.104 0.121 0.137 0.154 0.169 0.185 0.201 0.216 0.231 0.246 0.262 0.275 0.290 0.304 0.316 S12 ANG 63.7 67.2 70.7 72.4 73.0 73.5 73.2 72.7 72.3 71.6 70.9 70.4 69.3 68.8 67.8 66.9 65.9 64.9 64.2 63.0 MAG 0.485 0.296 0.233 0.207 0.195 0.188 0.185 0.182 0.182 0.180 0.181 0.181 0.181 0.182 0.182 0.184 0.185 0.186 0.187 0.187 S22 ANG -74.9 -104.7 -122.4 -133.6 -141.7 -147.9 -152.6 -156.4 -159.3 -161.8 -164.2 -165.9 -167.5 -168.9 -170.1 -171.4 -172.2 -173.5 -174.2 -174.7
Rev.3.00 May 09, 2006 page 9 of 10
2SC5773
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Dimension in Millimeters Symbol Min Nom Max
A2
A
A1 S b b1 c b2 A-A Section
e1
c1
I1
Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q
1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8
1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name 2SC5773JR-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 May 09, 2006 page 10 of 10
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
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