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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-5 TECHNICAL DATA FEATURES n HIGH POWER P1dB=37.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz n HERMETICALLY SEALED PACKAGE n BROAD BAND INTERNALLY MATCHED RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G CONDITIONS UNIT dBm dB A dB % C MIN. 37.0 6.0 TYP. MAX. 37.5 7.0 2.0 25 2.5 0.8 80 VDS= 9V f= 9.5 to 10.5GHz add Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 2.4A VDS= 3V IDS= 72mA VDS= 3V VGS= 0V IGS= -72A Channel to Case UNIT mS V A V C/W MIN. -1.5 -5 TYP. 1500 -3.0 5.0 3.0 MAX. -4.5 3.7 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2006 TIM0910-5 ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 5.7 40.5 175 -65 to +175 PACKAGE OUTLINE (2-9D1B) 2.0MIN. Unit: mm (1) Gate (2) Source 4-R2.4 (1) (2) (2) 2.50.3 (3) 0.50.15 0.2MAX 1.20.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 1.80.3 3.2MAX 8.5 MAX. 0.1 -0.05 +0.1 13.00.3 17.0 MAX. 2.0MIN 9.70.3 (3) Drain TIM0910-5 RF PERFORMANCES Output Power (Pout) vs. Frequency VDS=9V IDS2.0A Pin=30.5dBm Pout(dBm) 38 37 36 35 9.5 10.0 10.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 41 freq.=10.5GHz 40 39 38 VDS=9V IDS2.0A 70 60 50 40 30 Pout(dBm) 37 36 35 34 33 32 24 26 28 add 20 10 0 30 32 34 Pin(dBm) 3 add(%) Pout TIM0910-5 Power Dissipation(PT) vs. Case Temperature(Tc) 40 PT(W) 30 20 10 0 0 40 80 120 160 200 Tc( C ) 4 |
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