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| SERIES Transistor Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N130X is a one chip transistor with built-in bias resistor,PNP type is RT1P130X. RT1N130U 1.6 OUTLINE DRAWING RT1N130C 2.5 UNITmm FEATURE Built-in bias resistor (R1=1k). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 0.95 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 00.1 R1 B (IN) C (OUT) JEITA JEDEC Terminal Connector Base Emitter Collector RT1N130M 2.1 0.425 1.25 0.425 JEITASC-59 JEDECSimilar to TO-236 Terminal Connector Base Emitter Collector RT1N130S 4.0 E (GND) 0.65 0.3 3.0 00.1 Equivalent circuit 0.95 0.5 2.0 1.3 14.0 1.0 1.0 0.1 0.45 0.65 1.27 1.27 0.9 0.15 0.4 2.5 0.7 JEITASC-70 JEDEC Terminal Connector Base Emitter Collector 00.1 JEITA JEDEC Terminal Connector Emitter Collector Base ISAHAYA ELECTRONICS CORPORATION 0.4 SERIES MAXIMUM RATING (Ta=25) SYMBOL PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature RT1N130U RATING RT1N130M RT1N130C 50 6 50 100 200 +1 -55+15 Transistor Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N130S UNIT V V V mA mA mW LIMIT TYP 1 +1 -55+1 45 ELECTRICAL CHARACTERISTICS (Ta=25) SYMBOL PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product TEST CONDITION I C=100ARBE= VCB=50VI E =0 VCE=5VI C =1mA I C =10mAI B =0.5mA VCE=6VI E MIN 50 100 0.7 MAX 0.1 0.3 1.3 UNIT V A V k MHz =-10mA 1.0 200 DC forward current gain-Collector current 1000 VCE=5V Collector current-Input off voltage 1000 VCE=5V DC forward current gain hFE 100 Collector current IC[uA] 1 10 Collector current IC[mA] 100 100 10 10 0 0.5 1 Input off voltage VI(OFF)[V] 1.5 2 Input on voltage-Collector current 10 VCE=200mV Input on voltage VI(ON)[V 1 0.1 0.1 1 10 100 Collector current IC[mA] ISAHAYA ELECTRONICS CORPORATION cAE-{*"cAESeae*" http://www.idc-com.co.jp *854-0065 '**eOES`*Zs'Av--t' 6-41 A`S*YOEvESO*eSe *E*3/4ZI*iZ*A*M--S*IOEu*aE"wAeU**A"1/4"`I**iIOEI*a"-*1/2e*AOEe"(R)*i*e*e* eU**B*3/4Z**i IOEI*aU1/2IOEe"(R)*iEaeAA*AOEEAEA*l*gZ-OEI*AI*Z-OEI*AZi"I`SQEC*EaeEA`S**l--1/2 *c'**YOEv*A*A`I*o*YOEv*AOEe"(R)*i-hZ~*YOEvECIA`S*YOEvE*\*--O-3/4*B -{Z`------pE*UAI--OZ-* *E-{Z`--I*Aq--l--p"rE1/2"K*OECTn"dZq**i*w"u1/23/4-1/2IZQ*lZ`--A e*A-{Z`--'EL*UI Z*p*i*nEAACTn"dZq*S--L*e'm"I*aZYOE I`1/4IOE --IZAZ{*AZg--p-`o*eaIAI eUn*B *E-{Z`--EL*UI**if*[^*A*}*A*\I`1/4--pnH--aIZg--pENo*e`SQ*A`aeZOZO*S--LIOE --E`I*e*NSQESO*ACT n"dZqI*O"C*Un*B *E-{Z`--EL*UI**if*[^*A*}*A*\I`1/4`SAI*i*nI*A-{Z`--"-*sZ"_IaIA e*A"A*u--CECEaee--\**EE *I*X*eAE eU**B**iI*w"uE"-1/2eUAI*AZ-`OECTn"dZqO*A*VI*i*nSm"F-3/4*B *E-{Z`--EL*Ue1/2**iI*A*l-1/2ESOieaeE*oIAZg--pee@Si*A eIVXeE--pceeAE-U"I AEA*YOEv*A*`e1/2aIAI eUn*B-{Z`--I**i^--A*AU"(R)`I--p*Aa--A--p*A*qoF'--p*AOEZq--I*OEa--p*ASC'e 'OEp@Si eIVXeEC*A"AZe--p"rOI----pOEY"I*UEI*ACTn"dZqOOEa*AEi-3/4*B *E-{Z`--I"]*U*A**EAAI*A**`EaeeCTn"dZqIZ-`OI*`o*K--vA**B *E-{Z`--ESO*U*xEAAI-a**AI`1/4C*tI"_U1/2c*ACTn"dZqUAOEa*AEi-3/4*B 2002 "N11 OEZ*i* |
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