View DSEI30-12A_4222438.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Fast Recovery Epitaxial Diode (FRED)
DSEI 30
IFAVM = 26 A VRRM = 1200 V trr = 40 ns
VRSM V 1200
VRRM V 1200
Type
A
C
TO-247 AD
C
DSEI 30-12A
A
C
A = Anode, C = Cathode
Symbol IFRMS IFAVM x IFRM IFSM
Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 70 26 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 A A A A A A A A 2s A 2s A 2s A 2s C C C W Nm/lb.in. Nm/lb.in. g
Features
q
q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I 2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meet UL 94V-0
D1
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque with screw M3 Mounting torque with screw M3.5
Applications
q
q q q
138 0.45/4 0.55/5 6
q
q q q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
Symbol
Test Conditions
Characteristic Values typ. max.
Advantages
IR TVJ = 25C TVJ = 25C TVJ = 125C IF = 30 A; VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C 750 250 7 2.2 2.55 1.65 18.2 0.9 0.1 35 IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C VR = 540 V; IF = 30 A; -diF/dt = 240 A/s L 0.05 H; TVJ = 100C 40 16 60 18 A A mA V V V m K/W K/W K/W ns A
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q q
For power-loss calculations only TVJ = TVJM
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 1999 IXYS All rights reserved
D1 - 20
DSEI 30, 1200 V
70 A 60 50 IF 40 30 20 10 0 0 1 VF 2 3 V 4
6 T =100C C VVJ= 540V R 5 4 TVJ=25C TVJ=100C TVJ=150C Qr 3 2 max. 1 0 1 10 -diF/dt 100 A/s 1000 typ. IF=30A IF=60A IF=30A IF=15A
50 A 40
IRM
TVJ=100C VR= 540V IF=30A IF=60A IF=30A IF=15A max.
30
20 typ. 10
0 0 200
-diF/dt
400 A/s 600
Fig. 1 Forward current versus voltage drop.
1.4 1.2 1.0 Kf 0.8 0.6
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus -diF/dt.
60
1.0 s 0.8 TVJ=100C VR=540V
D1
1200 ns 1000 VFR 800 tfr 600 400 tfr
V 50 40 VFR 30 20
IRM
trr
max. 0.6
IF=30A IF=60A IF=30A IF=15A
QR
0.4
0.4
0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 200 -diF/dt 400 A/s 600 typ.
10 0 0 200 diF/dt
TVJ=125C IF=30A 400 A/s 600
200 0
Fig. 4 Dynamic parameters versus junction temperature.
1.0 K/W 0.8 ZthJC 0.6
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus diF/dt.
Dimensions
Dim. A B C D E F
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
0.4
G H J K L M
0.2
0.0 0.001
0.01
0.1 t
1
s
10
N
Fig. 7 Transient thermal impedance junction to case.
(c) 1999 IXYS All rights reserved
D1 - 21

▲Up To Search▲

Price & Availability of DSEI30-12A

	To Download DSEI30-12A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .