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| BFR99 DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transistor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier applications up to 1GHz. It features high fT, low reverse capacitance, good cross-modulation properties and low noise. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T s t g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T am b 25 C at T cas e 25 C Storage and Junction Temperature Value - 25 - 25 -3 - 50 225 360 - 55 to 200 Unit V V V mA mW mW C 1/4 BFR99 THERMAL DATA R t h j- c as e R t h j- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 486 777 C/W C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CBO V (B R)CBO V CE O(s u s ) * V (B R)E BO V BE h F E* Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdowm Voltage (I E = 0) Collector-emitter Sustaining Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Base-emitter Voltage DC Current Gain Test Conditions V CB = - 15 V I C = - 100 A I C = - 5 mA I E = - 10 A I C = - 10 mA I C = - 1 mA I C = - 10 mA I C = - 20 mA I C = - 10 mA f = 200 MHz IC = 0 f = 1 MHz I C = - 3 mA R g = 50 V CE = - 10 V V CE = - 10 V V CE = - 10 V V CE = - 10 V V CE = - 15 V V CE = - 15 V V CE = - 15 V f = 200 MHz f = 800 MHz V CE = - 15 V f = 200 MHz f = 800 MHz * Pulsed : pulse duration = 300s, duty cycle = 1%. Min. Typ. Max. - 100 Unit nA V V V - 25 - 25 -3 - 0.75 25 20 75 80 2 0.4 V fT C re NF Transition Frequency Reverse Capacitance Noise Figure GHz pF 2.5 3.5 5 dB dB I C = - 10 mA R g = 50 3 4 dB dB 2/4 BFR99 TO-72 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016198 3/4 BFR99 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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