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| MITSUBISHI HVIGBT MODULES CM1200HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-50H q IC................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 570.25 190 171 570.25 570.25 6 - M8 NUTS C C C C G E C C C 20 CM C E E E 124 0.25 140 E E E 40 CIRCUIT DIAGRAM E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 15 40 8 - 7MOUNTING HOLES 38 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 29.5 28 Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HB-50H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 110C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 2500 20 1200 2400 1200 2400 15600 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 120mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 1200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1250V, IC = 1200A, VGE = 15V VCC = 1250V, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = -2400A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 2.80 3.15 180 19.8 6.0 8.1 -- -- -- -- 2.50 -- 350 -- -- 0.006 Max 15 7.5 0.5 3.64 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.25 1.20 -- 0.008 0.016 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. 3. 4. (Note 4) (Note 1) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HB-50H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj=25C VGE=13V VGE=12V VGE=11V VGE=10V 2400 TRANSFER CHARACTERISTICS (TYPICAL) VCE=10V COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 2000 VGE=14V 1600 1200 VGE=15V VGE=20V 2000 1600 1200 800 400 0 Tj = 25C Tj = 125C 0 4 8 12 16 20 VGE=9V 800 400 0 VGE=8V VGE=7V 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=15V 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 10 Tj = 25C 8 IC = 2400A IC = 1200A 4 3 6 2 1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400 2 IC = 480A 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 CAPACITANCE CHARACTERISTICS (TYPICAL) 4 CAPACITANCE Cies, Coes, Cres (nF) 103 7 5 3 2 102 7 5 3 2 Cies 3 2 1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400 Coes 101 7 5 Cres VGE = 0V, Tj = 25C 3 2 Cies, Coes : f = 100kHz : f = 1MHz Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM1200HB-50H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIMES (s) 3 2 100 7 5 3 2 10-1 7 5 td(off) td(on) tr tf 101 7 5 3 2 100 7 5 Irr 103 7 5 3 2 VCC = 1250V, VGE = 15V RG = 1.6, Tj = 125C Inductive load 5 7 102 23 5 7 103 23 5 trr 5 7 102 23 5 7 103 23 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 VCC = 1250V, VGE = 15V, RG = 1.6, Tj = 125C, 2.5 Inductive load 2.0 1.5 1.0 0.5 0 Erec Eon Eoff HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 CURRENT (A) GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) VCC = 1250V IC = 1200A 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 Single Pulse TC = 25C Rth(j - c)Q = 0.008K/ W Rth(j - c)R = 0.016K/ W 12 8 4 0 0 5000 10000 15000 20000 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) Mar. 2003 GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (s) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1250V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 1.6 2 |
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