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| CHA3667A 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3667A is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a Power-HEMT process, 0.15m gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits . It is supplied in chip form. Vd RFin RFout Main Features. Broadband performance 7-20GHz Self biased 23dB gain @2.7dB noise figure 20 dBm Output power at 1dB compression DC power consumption, 175 mA @4.2V Chip size:2,45 x1,21x0,1 mm S21 S11 S22 Main Characteristics Tamb. = 25 Vd = 4.2V C, Symbol Fop G NF P-1dB Id Parameter Input frequency range Small signal gain Noise Figure Output power at 1dB gain compression Bias current Min 7 23 2.7 20 175 Typ Max 20 Unit GHz dB dB dBm mA ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Electrical Characteristics on wafer Ref. : DSCHA3667A7296 - 23 Oct 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3667A Tamb. = 25 Vd = 4.2V C, Symbol Fop G Parameter Operating frequency range Gain (7-8 GHz) (8-20 GHz) NF Noise figure (7-18 GHz) Noise figure (19-20 GHz) RLin RLout IP3 Input Return Loss Output Return Loss Output IP3 Pout at 1dB gain compression: P1dB ( 7-13 GHz) (14-20 GHz) Isol Vd Id Reverse isolation Drain bias voltage Drain bias current Min 7 7-20GHz Amplifier Typ Max 20 Unit GHz dB 21 23 2.5 3 -10 (1) -10 28 dB dB dB dB dBm 20 21 45 4.2 175 dBm dBm dB V mA These values are representative for on wafer measurements that are made without bonding wires at the RF ports. (1) Typical Rlin at 20GHz is -8dB Ref. : DSCHA3667A7296 - 23 Oct 07 2/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-20GHz Amplifier Absolute Maximum Ratings (1) Tamb. = +25 C Symbol Vd Id Pin Tch Ta CHA3667A Parameter Drain bias voltage Drain bias current RF input power (2) Maximum chanel temperature Operating temperature range Storage temperature range Values 4.5 240 3 +175 -40 to +85 Unit V mA dBm C C Tstg . -55 to +125 C (1)Operation of this device above anyone of these paramaters may cause permanent damage. (2)Duration<1s Ref. : DSCHA3667A7296 - 23 Oct 07 3/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3667A Typical Measured Performance On wafer measurement (without bonding wires at the RF ports) Tamb.=+25 Vd=+4.2V Id=175mA C, 7-20GHz Amplifier Gain & Return Losses versus frequency 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 Gain & Return Losses (dB) S21 S11 S22 10 12 14 16 18 20 22 24 26 Frequency ( GHz) Noise Figure versus Frequency 5.0 4.5 4.0 3.5 NF (dB) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 6 8 10 12 14 16 18 20 Frequency ( GHz) Ref. : DSCHA3667A7296 - 23 Oct 07 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-20GHz Amplifier Pout, Gain & Id versus Pin @ 7GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 Pout( dBm) & Gain (dB) 290 CHA3667A Gain Pout 270 Id (mA) 250 230 Id 210 190 170 -15 -10 Pin (dB) -5 0 Pout, Gain & Id versus Pin @16GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 Pout( dBm) & Gain (dB) 290 Gain Pout 270 Id (mA) 250 230 Id 210 190 170 Pout, Gain & Id versus Pin @20GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 Pout (dBm) & Gain (dB) 290 -15 -10 Pin (dB) -5 0 Gain Pout 270 Id (mA) 250 230 Id 210 190 170 -15 -10 Pin (dB) -5 0 Output Power @1dB compression versus Frequency 26 24 22 20 18 16 14 12 10 8 6 4 2 0 6 8 Pout @1dB compression (dBm) Pout@ 1 dB compression 10 12 14 16 18 20 Freq ( GHz) Ref. : DSCHA3667A7296 - 23 Oct 07 5/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3667A Typical Chip on wafer Sij parameters Tamb.=+25 Vd1=+4.2V, Id=175mA C, 7-20GHz Amplifier Ref. : DSCHA3667A7296 - 23 Oct 07 6/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-20GHz Amplifier Chip Assembly and Mechanical Data DC drain supply feed CHA3667A 10nF 120pF Vd OUT IN Note : 25m diameter gold wire is to be prefered. DC Pad size : 86/83m . RF Pad size: 105/171 m RF wire bondings should be as short as possible, lower than 0.35mm. Chip thickness: 100m .10 m Bonding pad position Ref. : DSCHA3667A7296 - 23 Oct 07 7/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3667A Notes 7-20GHz Amplifier -Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. -Due to BCB coating on the chip, qualification domain implies the chip must be glued. Ordering Information Chip form: CHA3667A98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3667A7296 - 23 Oct 07 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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