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 HAT1069C
Silicon P Channel Power MOS FET Power Switching
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Features
* Low on-resistance RDS(on) = 38 m typ (at VGS = -4.5 V) * High speed switching * Capable of 1.8 V gate drive * High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Index band 6 5 2345 DDDD 4 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
2 1
3
S 1
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR PchNote2 Tch Tstg Ratings -12 8 -4 -16 -4 900 150 -55 to +150 Unit V V A A A mW C C
Notes: 1. PW 10 s, duty cycle 1% 2. When using the grass epoxy board. (FR4 40 x 40 x 1.6 mm)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 1 of 5
HAT1069C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min -12 8 -- -- -0.3 -- -- -- 5 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 38 48 60 8 1380 235 115 16 3 6.2 35 150 490 350 -0.8 Max -- -- 10 -1 -1.2 52 70 93 -- -- -- -- -- -- -- -- -- -- -- -1.1 Unit V V A A V m m m S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 6.4 V, VDS = 0 VDS = -12 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -1.5 A, VGS = -4.5 V ID = -1.5 A, VGS = -2.5 V ID = -1.5 A, VGS = -1.8 V ID = -1.5 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VDS = -10 V VGS = -4.5 V ID = -3 A VGS = -4 V, ID = -1.5 A VDD -10 V RL = 6.6 Rg = 4.7 IF = -4 A, VGS = 0Note3
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 2 of 5
HAT1069C
Main Characteristics
Power vs. Temperature Derating
1600 -100
Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Maximum Safe Operation Area
Ta = 25C 1 shot Pulse
Channel Dissipation Pch (mW)
100 s
10 s
PW
1200
Drain Current ID (A)
-10
=
1
10
m
s
D C
800
-1
m s
O pe tio ra n
N
e4 ot
400
-0.1 Operation in this area is limited by RDS(on) -0.01 -0.1 -1
0 0
50
100
150
200
-10
-100
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Note 4: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
-16 -10 V -4.5 V -3 V -2.5 V -16 -2.2 V
Typical Transfer Characteristics
VDS = -10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
-12
-2 V
-12
-8
VGS = -1.8 V
-8
-4 Pulse Test 0 -2 -4 -6 -8 -10
-4
75C 25C Tc = -25C -1 -2 -3 -4 -5
0 0
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Voltage VDS(on) (mV) Drain to Source On State Resistance RDS(on) (m)
-250 Ta = 25C -200 -150 -4.0 A
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
1000 Pulse Test Ta = 25C -2.5 V 100 VGS = -1.8 V
-100 -1.5 A -50 -1.0 A 0 -2 -4 -6 -8 -10
-4.5 V 10
1 -0.1
-1
-10
Gate to Source Voltage
VGS (V)
Drain Current ID (A)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 3 of 5
HAT1069C
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S) Drain to Source On State Resistance RDS(on) (m)
120 Pulse Test -4 A -1.8 V -1.5 A -4 A -2.5 V 40 20 -25 VGS = -4.5 V 0 25 50 75 100 125 150 ID = -4 A, -1.5 A, -1 A -1 A -1.5 A -1 A 100 Pulse Test
Forward Transfer Admittance vs. Drain Current
100
10
80
Tc = -25C
60
75C 1 25C
0.1 -0.1 -0.3 -1
VDS = -10 V -3 -10
Case Temperature Tc (C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz Ciss 1000 Coss 100
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = -3 A VDD = -10, -12 V -7 V -5 V
-8
-5 V -7 V -10 V VDD = -12 V
-4
Crss
10 0 -2 -4 -6 -8 -10 -12
-16 0
10 Gate Charge Qg (nc)
-8 20
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
Reverse Drain Current vs. Source to Drain Voltage
-16
Switching Time t (ns)
td(off) tf tr 100 td(on)
Reverse Drain Current IDR (A)
VGS = -4.5 V, VDD = -10 V
Pulse Test
-12 -5 V -8 VGS = 0, 5 V -4
10 -0.1
Ta = 25C 0 -0.4 -0.8 -1.2 -1.6 -2.0
-1
-10
-100
Drain Current ID (A)
Source to Drain Voltage VSD (V)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 4 of 5
Gate to Source Voltage VGS (V)
10000
0
0
Capacitance C (pF)
HAT1069C
Package Dimensions
Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g
D e A c LP
E
HE
A xM
A S A b
L
e A2 A
Reference Symbol
Dimension in Millimeters
yS
A1 S e1 b l1
c
b2 Pattern of terminal position areas
A-A Section
A A1 A2 b c D E e HE L LP x y b2 e1 l1
Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15
Nom
0.2 0.15 2.0 1.7 0.65 2.1 0.2
Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5
1.65
Ordering Information
Part Name HAT1069C-EL-E Quantity 3000 pcs Taping Shipping Container
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 5 of 5
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0


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