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| AEGIS SEMICONDUTORES LTDA. A5N:1400.XXH VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 125 OC A5N:1400.16 A5N:1400.18 A5N:1400.20 A5N:1400.22 1600 1800 2000 2200 Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 125OC 1700 1900 2100 2300 TJ = -40 to 0OC 1600 1800 2000 2200 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 1400 70 3080 25.7 IFSM Max. Peak non-rep. surge current 26.9 KA 30.5 32 3300 3000 I t Max. I t capability 4651 4250 It 2 1/2 2 2 UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial TJ = 125OC, rated VRRM applied after surge. C C C A O IF(RMS) Nom. RMS current A Initial TJ = 125OC, no voltage applied after surge. Initial TJ = 125OC, rated VRRM applied after surge. kA s t = 10ms t = 8.3 ms kA s 2 1/2 2 Initial TJ = 125OC, no voltage applied after surge. 2 Max. I t 2 1/2 capability 46510 Initial TJ = 125OC, no voltage applied after surge. for time tx = I t 2 1/2 It * 1/2 tx . (0.1 < tx < 10ms). di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 1000 A/ms TJ = 125O C, VD = VDRM , ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Non lubricated threads 16 3.0 3 5 2500 W W A V N AEGIS SEMICONDUTORES LTDA. A5N:1400.XXH CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO)1 Low-level threshold VT(TO)2 High-level threshold rT1 Low-level resistance rT2 High-level resistance IL Latching current IH Holding current td Delay time MIN. ----------------TYP. 1.38 --------1000 100 0.5 MAX. UNITS 1.73 0.91 1.01 0.21 0.19 --600 1.9 mW mA mA ms ms V V TEST CONDITIONS Initial TJ = 25 OC, 50-60Hz half sine, I peak = 4398A. TJ = 125OC Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)] Use low values for ITM < p rated IT(AV) TC = 25 C, 12V anode. Gate pulse: 10V, 20W, 100ms. TC = 25O C, 12V anode. Initial IT = 10A. TC = 25OC, VD = rated VDRM , 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125OC, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 200 V/ms lin. To 80% rated VDRM . Gate: 0V, 100W. TJ = 125OC. Exp. to 100% or lin. To 80% V DRM , gate open. O O 2 tq Turn-off time --- --- 200 dv/dt Critical rate-of-rise of off- 300 state voltage 600 IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style ----75 ----------------- 500 --40 200 100 1.4 1.1 ----------425 (15) TO-200AD ----100 --200 --3 0.25 0.023 0.025 0.025 0.01 --- V/ms Higher dv/dt values avaliable. TJ = 125 C, Exp. To 67% VDRM , gate open. mA mA V V O O TJ = 125OC, Rated VRRM and VDRM , gate open. TC = -40 C TC = 25 C TC = -40 OC TC = 25OC TC = 25OC, Max. Value which will not trigger with rated V DRM anode-to-cathode. O O +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. C/W DC operation. C/W 180O sine wave, double side coolde. O C/W 120 rectangular wave, double side cooled. O O C/W Mtg. Surface smooth, flat and greased. ----- g(oz.) JEDEC AEGIS SEMICONDUTORES LTDA. A5N:1400.XXH Maximum Allowable Case Temperature 125 125 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 90 85 80 75 70 65 30 120 60 90 180 DC Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 90 85 80 75 70 65 60 0 200 400 600 *Sinusoidal waveform 30 60 90 120 180 60 *Rectangular waveform 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W A1F:400.XXHY (Single Side Cooled) RthJ-hs(DC) = 0.09K/W Maximum Average Forward Power Loss 40000 Maximum Average Forward Power Loss 28000 30 Maximum Average Forward Power Loss (W) 36000 32000 28000 24000 20000 16000 12000 8000 4000 0 0 500 1000 1500 2000 2500 Maximum Average Forward Power Loss (W) 30 24000 20000 16000 60 60 12000 90 90 120 180 8000 4000 0 0 500 1000 1500 2000 2500 120 180 DC 3000 3000 3500 *Sinusoidal waveform *Rectangular waveform Average Forward Current (A) Average Forward Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics AEGIS SEMICONDUTORES LTDA. A5N:1400.XXH Transient Thermal Impedance ZthJC Forward Voltage Drop 10000 10-1 Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 10-2 1000 125C 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 10-3 10-3 10-2 10-1 100 101 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance ZthJC Characteristics TO-200AD |
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