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| New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB MBR30H90CT MBR30H100CT PIN 1 PIN 3 PIN 2 CASE 2 1 3 MBRF30H90CT MBRF30H100CT PIN 1 PIN 3 PIN 2 1 2 3 TO-263AB K FEATURES * Guardring for overvoltage protection * Lower power losses, high efficiency * Low forward voltage drop * Low leakage current * High forward surge capability * High frequency operation * Meets MSL level 1, per J-STD-020C, LF maximum peak of 245 C (for TO-263AB package) * Solder dip 260 C, 40 s (for TO-220AB and ITO-220AB package) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum 2 1 MBRB30H90CT MBRB30H100CT PIN 1 PIN 2 K HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. 15 A x 2 90 V, 100 V 275 A 0.67 V 5.0 A 175 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (Fig. 1) total device per diode SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM dV/dt TJ, TSTG VAC MBR30H90CT 90 90 90 30 15 275 1.0 10000 - 65 to + 175 1500 MBR30H100CT 100 100 100 UNIT V V V A A A V/s C V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 s, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Document Number: 88791 Revision: 12-Nov-07 www.vishay.com 1 New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode at working peak reverse voltage (1) Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle TEST CONDITIONS IF = 15 A IF = 15 A IF = 30 A IF = 30 A TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C SYMBOL VALUE 0.82 0.67 0.93 0.80 5.0 6.0 UNIT VF V IR A mA THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC MBR 1.9 MBRF 4.6 MBRB 1.9 UNIT C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-220AB ITO-220AB TO-263AB TO-263AB Note: (1) Automotive grade AEC Q101 qualified PREFERRED P/N MBR30H100CT-E3/45 MBRF30H100CT-E3/45 MBRB30H100CT-E3/45 MBRB30H100CT-E3/81 MBR30H100CTHE3/45 (1) MBRF30H100CTHE3/45 (1) UNIT WEIGHT (g) 1.85 1.99 1.35 1.35 1.85 1.99 1.35 1.35 PACKAGE CODE 45 45 45 81 45 45 45 81 BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape reel Tube Tube Tube Tape reel MBRB30H100CTHE3/45 (1) MBRB30H100CTHE3/81 (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 35 300 Average Forward Current (A) 30 25 20 MBRF30H90CT - MBRF30H100CT 15 10 5 0 0 25 50 75 100 125 150 175 MBR30H90CT - MBR30H100CT MBRB30H90CT - MBRB30H100CT Peak Forward Surge Current (A) 250 TJ = TJ max. 8.3 ms Single Half Sine-Wave 200 150 100 50 0 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve Per Diode Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Document Number: 88791 Revision: 12-Nov-07 www.vishay.com 2 New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor 100 10000 Instantaneous Forward Current (A) 10 TJ = 150 C TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C Junction Capacitance (pF) TJ = 175 C 1000 100 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 10000 TJ = 175 C 1000 TJ = 150 C TJ = 125 C TJ = 100 C 10 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 100 10 1 TJ = 25 C 1 0.1 0.01 20 40 60 80 100 0.1 0.01 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88791 Revision: 12-Nov-07 www.vishay.com 3 New Product MBR30H90CT & MBR30H100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 45 REF. 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7 REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7 REF. 0.350 (8.89) 0.330 (8.38) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 1 2 3 7 REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 Document Number: 88791 Revision: 12-Nov-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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