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| BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 G T2 T1 T2 G T1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM It dI/dt IGM PG(AV) Tstg Tj Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns Peak gate current Average gate p ower diss ipation Storage junction temperature range Operating junction temperature range TO-220AB F = 60 Hz F = 50 Hz Tc = 110C t = 16.7 ms t = 20 ms Value 8 84 80 36 Tj = 125C Tj = 125C Tj = 125C 50 4 1 - 40 to + 150 - 40 to + 125 Unit A A As A/s A W C tp = 10 ms F = 120 Hz tp = 20 s ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) s SNUBBERLESSTM and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Tj = 125C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 30 RL = 3.3 k Tj = 125C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 400 4.5 35 1.3 0.2 50 70 80 1000 7 V/s A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Tj = 125C Test Conditions RL = 30 Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 50 50 100 400 10 V/s V/s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125C (dV/dt)c (2) (dI/dt)c =3.5 A/ms Tj = 125C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 11 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX. Value 1.55 0.85 50 5 1 Unit V V m A mA Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 1.6 60 Unit C/W C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTB/BTA08 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA08 Marking BTB/BTA08 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). P (W) 10 9 8 7 6 5 4 3 2 1 0 10 9 8 7 6 5 4 3 2 1 0 F ig. 2-1: R MS on-s tate current vers us cas e temperature (full cycle). IT (R MS ) (A ) BTB B TA IT (R MS )(A ) T c ( C ) 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 F ig. 2-2: R MS on-s tate current vers us ambient temperature (printed circuit board F R 4, copper thicknes s : 35m ),full cycle. IT (R MS ) (A ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 Tamb( C ) DPA K (S =0.5c m 2 ) D 2 PA K (S =1c m 2 ) F ig. 3: R ela tive variation of thermal impedance vers us puls e duration. K =[Zth/R th] 1E +0 Zth(j-c) 1E -1 Zth(j-a) 1E -2 50 75 100 125 1E -3 1E -3 tp(s ) 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 F ig. 4: values ). IT M (A ) 100 O n-s tate chara cteris tics (ma ximum F ig. 5: S urge peak on-s tate current versus number of cycles. IT S M (A ) T j max. V to = 0.85 V R d = 50 m T j=T j max 10 T j=25 C V T M(V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 90 80 70 60 50 40 30 20 10 0 t=20ms One cycle Non repetitive T j initial=25 C R epetitive T c=100 C Number of cycles 1 10 100 1000 BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F ig. : 6 Non-repetitive s urge peak on-s tate current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of It. IT S M (A ),I (A ) t s 1000 T j initial=25C F ig. 7 R elative va riation of gate trigger current, : holding current and la tching current versus junction temperature (typical va lues ). IG T,IH,IL [T j] / IG,IH,IL [T j=25C ] T 2.5 2.0 dI/dt limitation: 50A /s IG T IT S M 1.5 1.0 IH & IL 100 It 0.5 tp (ms ) 10 0.01 0.10 1.00 10.00 T j(C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 F ig. -2: R elative variation of critical rate of 8 decreas e of main current vers us (dV /dt)c (typical values ). S tandard Types (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 (dV /dt)c (V /s ) B C F ig. : 9 R elative varia tion of critical rate of decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 T j(C ) 1.0 10.0 100.0 0 0 25 50 75 100 125 F ig. 0 : DPAK and D 2PAK T hermal resis tance 1 junction to ambient vers us copper s urface under tab (printed circuit board F R 4, copper thicknes s : 35 m). R th(j-a) (C /W) 100 90 80 70 60 50 40 30 20 10 0 DPAK DPAK S (c m ) 0 4 8 12 16 20 24 28 32 36 40 BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F ig. 6: Non-repetitive s urge peak on-s tate current for a s inus oida l puls e with width tp < 10ms, a nd corres ponding value of It. IT S M (A ), I t (A s ) 1000 T j initial=25 C F ig. 7: R elative va riation of gate trigger current, holding current and la tching current versus junction temperature (typical va lues ). IG T,IH,IL [T j] / IG T,IH,IL [T j=25 C ] 2.5 2.0 dI/dt limitation: 50A / s IG T IT S M 1.5 1.0 IH & IL 100 I t 0.5 tp (ms ) 10 0.01 0.10 1.00 10.00 T j( C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 F ig. 8-1: R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typica l values ). S nubberles s & L ogic L evel Types (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.2 2.0 TW 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 (dV /dt)c (V / ) s 0.2 0.0 0.1 1.0 10.0 F ig. 8-2: R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typical values ). S tandard Types (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 1.6 1.4 B C T 835/C W/B W 1.2 1.0 0.8 0.6 100.0 (dV /dt)c (V / ) s T 810/S W 0.4 0.1 1.0 10.0 100.0 F ig. 9: R elative varia tion of critical rate of decreas e of main current vers us junction temperature. F ig. 10: DPAK and D 2PAK T hermal resis tance junction to ambient vers us copper s urface under tab (printed circuit board F R 4, copper thicknes s : 35 m). R th(j-a) ( C /W) 100 90 80 70 60 50 40 30 20 10 0 (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 0 0 25 T j( C ) DPAK D P AK S (c m ) 50 75 100 125 0 4 8 12 16 20 24 28 32 36 40 |
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