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| VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1800 6100 9600 94x103 0.9 0.05 V A A A V m Phase Control Thyristor 5STP 50Q1800 Doc. No. 5SYA1070-01 Okt. 03 * * * * * Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10 ms tp = 5 ms, single pulse Exp. to 0.67 x VDRM, Tvj = 125C Symbol Conditions IDRM IRRM 5STP 50Q1800 1800 V 2000 V ---1000 V/s min typ max 300 300 ---- Characteristic values Unit mA mA Forward leakage current Reverse leakage current VDRM, Tvj = 125C VRRM, Tvj = 125C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 90 kN, Ta = 25 C min 25.5 36 typ max 2.1 26.5 Air strike distance Da 15 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 50Q1800 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125 C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125 C, VD = VR = 0 V Half sine wave, Tc = 70C min typ max 6100 9600 94x10 3 Unit A A A 6 41.28x10 100x10 3 A2s A 43.37x10 min typ max 1.04 0.9 0.05 100 75 500 350 6 A2s Unit V V m mA mA mA mA Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C IT = 3000 A, Tvj = 125 C IT = 4000 A - 18000 A, Tvj= 125 C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 C, ITRM = 3000 A, VD 0.67 VDRM, IFG = 2 A, tr = 0.5 s Cont. f = 50 Hz Cont. f = 1Hz min typ max 250 1000 Unit A/s A/s s Circuit-commutated turn-off tq time Characteristic values Tvj = 125C, ITRM = 3000 A, VR = 200 V, diT/dt = -20 A/s, VD 0.67VDRM, dvD/dt = 20V/s 500 Parameter Recovery charge Symbol Conditions Qrr Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s VD = 0.4VRM, IFG = 2 A, tr = 0.5 s, Tvj = 25 C min typ max 3000 Unit As Gate turn-on delay time tgd 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 2 of 6 5STP 50Q1800 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Average gate power loss Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT IGT VGD IGD Tvj = 25 C Tvj = 25 C VD = 0.4 x VDRM, Tvj = 125 C VD = 0.4 x VDRM, Tvj = 125C min typ max 12 10 10 Unit V A V see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA Parameter Gate-trigger voltage Gate-trigger current Gate non-trigger voltage Gate non-trigger current Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled -40 min typ 140 max 5 10 10 1 2 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j - c)(t) = a Ri(1 - e- t/ i ) i =1 2 0.936 0.0854 i Ri(K/kW) i(s) 1 3.359 0.4069 3 0.481 0.0118 4 0.224 0.0030 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 3 of 6 5STP 50Q1800 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj IT + CTvj ln(IT +1) + DTvj IT Valid for IT = 200 - 100000 A A25 B25 C25 D25 -3 -6 -3 -3 932.00x10 25.28x10 -14.74x10 3.72x10 VT125 = ATvj + BTvj IT + CTvj ln(IT +1) + DTvj IT Valid for IT = 200 - 100000 A A125 -3 334.70x10 B125 -6 29.36x10 C125 -3 61.20x10 D125 -3 2.31x10 Fig. 2 On-state characteristics. Tj=125C, 10ms half sine Fig. 3 Max. on-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 4 of 6 5STP 50Q1800 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1070-01 Okt. 03 page 5 of 6 5STP 50Q1800 C C Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1070-01 Okt. 03 |
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