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| SI4618DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 30 30 rDS(on) () 0.017 at VGS = 10 V 0.0195 at VGS = 4.5 V 0.010 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a 8.0 7.5 15.2 14.1 Qg (Typ) 12.5 FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS 17 * Notebook Logic DC-DC * Low Current DC-DC D1 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.43 V at 1.0 A IF (A)a 3.8 G1 8 7 6 5 Top View Ordering Information: SI4618DY-T1-E3 (Lead (Pb)-free) D1 S1/D2 S1/D2 S1/D2 G2 N-Channel 2 MOSFET S2 Schottky Diode N-Channel 1 MOSFET SO-8 G1 S2 S2 G2 1 2 3 4 S1/D2 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS ISM IAS EAS PD TJ, Tstg Channel-1 30 16 8.0 6.4 6.7b, c 5.4b, c 35 1.8 1.25b, c 35 15 11.2 1.98 1.26 1.38b, c 0.88b, c - 55 to 150 Channel-2 30 16 15.2 12.1 11.4b, c 9.1b, c 60 3.8 2.4b, c 35 15 11.2 4.16 2.66 2.35b, c 1.5b, c Unit V Continuous Drain Current (TJ = 150 C) Pulsed Drain Current (10 s Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Typ Max 72 90 63 Channel-2 Typ Max 43 53 25 30 Unit C/W RthJA t 10 sec Maximum Junction-to-Ambientb, d RthJF 51 Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 125 C/W (Channel-1) and 100 C/W (Channel-2). Document Number: 74450 S-70193-Rev. A, 29-Jan-07 www.vishay.com 1 SI4618DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 1 mA ID = 250 A ID = 250 A VDS = VGS, ID = 1 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = 16 V VDS = 0 V, VGS = 16 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 C VDS = 30 V, VGS = 0 V, TJ = 100 C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 8 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 5 A VGS = 4.5 V, ID = 5 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 8 A Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 8 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 8 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 8 A f = 1 MHz Ch-1 Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1535 2290 205 360 91 117 29 39 12.5 17 4.1 5.6 3.4 4 1.8 1.9 3.0 3.0 44 59 19 26 nC pF gfs VDS = 15 V, ID = 8 A VDS = 15 V, ID = 8 A Ch-1 Ch-2 Ch-1 Ch-1 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 20 0.014 0.0083 0.016 40 47 0.017 0.010 0.0195 3 0.05 1 1 30 30 35 -6 2.5 2.5 100 100 0.001 0.5 0.025 15 A mA A V Symbol Test Conditions Min Typa Max Unit 0.0095 0.0115 S www.vishay.com 2 Document Number: 74450 S-70193-Rev. A, 29-Jan-07 SI4618DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a Symbol Test Conditions Ch-1 Channel-1 VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 15 V, RL = 3 ID 5 A, VGEN = 4.5 V, Rg = 1 Channel-2 VDD = 15 V, RL = 3 ID 5 A, VGEN = 4.5 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 IS = 2 A IS = 1 A Ch-1 Ch-2 Ch-1 Ch-2 Channel-1 IF = 4 A, di/dt = 100 A/s, TJ = 25 C Channel-2 IF = 4 A, di/dt = 100 A/s, TJ = 25 C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Min Typa 8 9 22 24 20 26 8 8 24 24 87 97 30 35 34 45 Max 15 16 33 36 30 39 15 15 36 36 130 145 45 53 51 68 1.8 3.8 35 35 Unit td(on) tr td(off) tf td(on) tr td(off) tf ns IS ISM VSD trr Qrr ta tb TC = 25 C A 0.77 0.37 22 26 15 15 13 13 9 13 1.1 0.43 33 39 23 23 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74450 S-70193-Rev. A, 29-Jan-07 www.vishay.com 3 SI4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 1.6 2.0 30 1.2 20 0.8 TC = 25 C 0.4 TC = 125 C TC = - 55 C 2 3 4 5 10 3V 0 0.0 0.0 0.6 1.2 1.8 2.4 3.0 0 1 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.025 2000 Transfer Characteristics r DS(on) - On-Resistance ( ) 0.022 C - Capacitance (pF) Ciss 1600 0.019 VGS = 4.5 V 0.016 VGS = 10 V 1200 800 0.013 400 Coss Crss 0 6 12 18 24 30 0.010 0 10 20 30 40 50 ID - Drain Current (A) 0 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 8 A VGS - Gate-to-Source Voltage (V) 8 rDS(on) - On-Resistance (Normalized) VDS = 10 V 6 VDS = 30 V VDS = 20 V 1.6 1.8 ID = 8 A Capacitance VGS = 10 V 1.4 VGS = 4.5 V 1.2 4 1.0 2 0.8 0 0 6 12 18 24 30 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 74450 S-70193-Rev. A, 29-Jan-07 SI4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.10 ID = 8 A r DS(on) - On-Resistance ( ) 10 I S - Source Current (A) 150 C 0.08 1 0.06 0.1 25 C 0.04 125 C 0.02 25 C 0.01 0.001 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 100 On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) 80 - 0.1 ID = 5 mA - 0.4 ID = 250 A - 0.7 Power (W) 60 40 20 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (C) Threshold Voltage 100 *Limited by rDS(on) Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 1s 10 s dc 0.01 0.1 *VGS 10 1 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74450 S-70193-Rev. A, 29-Jan-07 www.vishay.com 5 SI4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 8 I D - Drain Current (A) 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 2.5 1.20 2.0 Power Dissipation (W) Power Dissipation (W) 0.96 1.5 0.72 1.0 0.48 0.5 0.24 0.0 0 25 50 75 100 125 150 0.00 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74450 S-70193-Rev. A, 29-Jan-07 SI4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.1 2. Per Unit Base = RthJA = 110 C/W 3. TJM - TA = PDMZthJA(t) 0.01 10-4 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 4. Surface Mounted 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 74450 S-70193-Rev. A, 29-Jan-07 www.vishay.com 7 SI4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 4 5 30 3V 20 3 2 TC = 125 C 1 TC = 25 C TC = - 55 C 10 0 0.0 0 0.6 1.2 1.8 2.4 3.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.012 2800 Ciss 0.011 VGS = 4.5 V 0.010 C - Capacitance (pF) 2240 r DS(on) - On-Resistance ( ) 1680 0.009 VGS = 10 V 1120 0.008 560 Crss Coss 0.007 0 10 20 30 40 50 ID - Drain Current (A) 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 8 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V VDS = 30 V 6 VDS = 20 V 4 rDS(on) - On-Resistance (Normalized) 1.5 1.8 ID = 8 A Capacitance VGS = 10 V VGS = 4.5 V 1.2 0.9 2 0 0 9 18 27 36 45 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 74450 S-70193-Rev. A, 29-Jan-07 SI4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.05 ID = 8 A r DS(on) - On-Resistance ( ) 10 I S - Source Current (A) 150 C 0.04 1 25 C 0.1 0.03 0.02 125 C 0.01 25 C 0.01 0.001 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 10-1 200 On-Resistance vs. Gate-to-Source Voltage 10-2 I S - Source Current (A) 30 V 160 10-4 10 V Power (W) 10-3 120 80 10-5 40 20 V 10-6 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 0 0.001 0.01 0.1 Time (sec) 1 10 Reverse Current (Schottky) 100 *Limited by rDS(on) 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 1s 10 s dc 0.01 0.1 *VGS 10 1 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74450 S-70193-Rev. A, 29-Jan-07 www.vishay.com 9 SI4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 17 14 I D - Drain Current (A) 10 7 3 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 5 1.5 4 Power Dissipation (W) Power Dissipation (W) 1.2 3 0.9 2 0.6 1 0.3 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 74450 S-70193-Rev. A, 29-Jan-07 SI4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM Notes: 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 125 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74450. Document Number: 74450 S-70193-Rev. A, 29-Jan-07 www.vishay.com 11 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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