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| AEGIS SEMICONDUTORES LTDA. A1C:20S.XX.10 VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 150 C A1C:20S.02.10 A1C:20S.04.10 A1C:20S.06.10 A1C:20S.08.10 A1C:20S.10.10 A1C:20S.12.10 A1C:20S.14.10 A1C:20S.16.10 200 400 600 800 1000 1200 1400 1600 O Max. VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 150O C 300 500 700 900 1100 1300 1500 1700 This datasheet applies to: Metric thread: A1C:20S.XX.10, A1D:20S.XX.10 Inch thread: A2C:20S.XX.10, A2D:20S.XX.10 TJ = -40 to 0OC 200 400 600 800 1000 1200 1400 1600 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 150 -40 to 150 20 100 30 0.34 IFSM Max. Peak non-rep. surge current 0.37 kA 0.39 0.42 0.66 0.72 I t Max. I t capability 0.75 0.82 2 1/2 2 1/2 I t Max. I t capability 2 2 UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial TJ = 125 O rated VRRM C, applied after surge. O C C C A O IF(RMS) Nom. RMS current A Initial TJ = 125 C, no voltage applied after surge. O Initial TJ = 125 C, rated VRRM applied after surge. O kA s t = 10ms t = 8.3 ms O 2 Initial TJ = 125 C, no voltage applied after surge. 2 9.2 0.1 25 20 25 2 As 2 1/2 Initial TJ = 125 C, no voltage applied after surge. for time tx = I t TJ = 25 C O It 2 1/2 * tx1/2. (0.1 < tx < 10ms). IRRM Maximum peak reverse current at rated VRRM . IRM Peak reverse recovery current IFM Peak forward current di/dt Max. Non-repetitive rate-ofrise current F Mounting Force mA A A A/ms N.m TJ = 25 C, VD = VDRM , IFM = 20A. - O AEGIS A1C:20S.XX.10 CHARACTERISTICS PARAMETER VFM peak on-state voltage VF(TO) Threshold voltage rF Slope resistance trr Maximum reverse recovery time RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. --------------7(.25) MAX. UNITS 1.55 1.18 7 1000 2000 2 1 --O TEST CONDITIONS Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 63A. TJ = 150 O C TJ = 25OC, IF = 1A to V R = 30V, -dIF/dt = 25A/ms TJ = 25OC, -dIF/dt = 25A/ms, IFM = p x rated IF(Av.). O V V mW ns C/W DC operation C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) DO-203AA (DO-4) JEDEC Maximum Allowable Case Temperature (C) 150 140 130 Maximum Allowable Case Temperature Maximum Allowable Case Temperature 150 Maximum Allowable Case Temperature (C) 140 130 120 110 90 30 30 120 110 100 90 80 0 2 4 6 60 60 90 120 180 100 120 180 90 DC 80 0 *Rectangular waveform 8 10 12 14 16 5 10 15 20 25 *Sinusoidal waveform Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average Forward Power Loss 30 Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) 120 Maximum Average Forward Power Loss (W) 30 100 100 80 60 80 60 60 90 120 60 90 120 40 180 40 180 DC 20 20 0 *Sinusoidal waveform 0 *Rectangular waveform 0 5 10 15 20 25 0 5 10 15 20 25 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics AEGIS A1C:20S.XX.10 Forward Voltage Drop 10 Transient Thermal Impedance ZthJC 10 Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 1 150C 25C 1 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0.1 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics 1000 Fig. 6 - Transient Thermal Impedance Characteristics 1000 Frequency Characteristics Frequency Characteristics Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz 100 1 kHz 2 kHz 100 2 kHz 1x101 *Sinusoidal pulse Tc = 60C 1x102 1x103 104 10 1x101 *Rectangular pulse Tc = 60C 1x102 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 7 - Frequency Characteristics 1000 Fig. 8 - Frequency Characteristics 1000 Frequency Characteristics Frequency Characteristics Peak On-State Current (A) Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz 50 Hz 100 Hz 200 Hz 500 Hz 100 1 kHz 100 2 kHz *Sinusoidal Pulse Tc = 80C 1x102 1x103 104 1x101 *Rectangular Pulse Tc = 80C 1x102 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics AEGIS A1C:20S.XX.10 1000 Frequency Characteristic 1000 Frequency Characteristics 50 Hz Peak On-State Current (A) Peak On-State (A) 100 Hz 200 Hz 500 Hz 1 kHz 50 Hz 100 Hz 100 500 Hz 200 Hz 100 2 kHz 1 kHz 10 *Sinusoidal pulse Tc = 100C 1x102 1x103 104 Pulse Basewidth (ms) *Rectangular pulse Tc = 100C 1x102 1x103 104 Pulse Basewidth (ms) Fig. 11 - Frequency Characteristics Maximum On-State Energy Power Loss 0.05 J 0.01 J 0.02 J 0.1 J 0.2 J 0.5 J 1J Fig. 12 - Frequency Characteristics Maximum On-State Energy Power Loss 100 1J 0.2 J 0.5 J 100 Peak On-State Current (A) 10 Peak On-State Current (A) 0.01 J 0.02 J 0.05 J 0.1 J 10 1 *Sinusoidal pulse 1x102 1x103 104 1 1x102 *Rectangular pulse 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 13 - Maximum On-State Power Loss Characteristics Fig. 14 - Maximum On-State Power Loss Characteristics DO-203AA (DO-4) SW 11 M6 x 1 10/32 UNF 2A Fig. 15 - Outline Characteristics |
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