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AEGIS
SEMICONDUTORES LTDA.
A1A:460.XX
VOLTAGE RATINGS
Part Number VRRM , VR - (V) rep. peak reverse voltage C TJ = 0 to 180 O A1A:460.02 A1A:460.04 A1A:460.06 A1A:460.08 A1A:460.10 A1A:460.12 A1A:460.14 A1A:460.16 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR - (V) Max. nonrep. peak reverse voltage
O
This datasheet applies to: Metric thread: A1A:460.XX, A1B:460.XX Inch thread: A2A:460.XX, A2B:460.XX
TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600
TJ = 25 to 180 C 300 500 700 900 1100 1300 1500 1700
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 460 125 940 10900 IFSM Max. Peak non-rep. surge current 11450 A 13000 13600 598 I2t Max. I2t capability 546 845 772 It
2 1/2
UNITS
O O
NOTES O 180 half sine wave
C C C
A
O
IF(RMS) Nom. RMS current
A 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms kA2s t = 8.3 ms t = 10ms
Initial T J = 180OC, rated VRRM applied after surge. Initial T J = 180OC, no voltage applied after surge. Initial T J = 180OC, rated VRRM applied after surge. Initial T J = 180 C, no voltage applied after surge.
O
Max. I t
2 1/2
capability
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
8450 60(534)
AEGIS
SEMICONDUTORES LTDA.
A1A:460.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. --------------------500(17.5) MAX. UNITS 1.42 0.78 0.87 0.35 0.31 40 0.15 0.17 0.19 0.015 --O
TEST CONDITIONS Initial TJ = 25 C, 50-60Hz half sine, I peak = 1445A. TJ = 180 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS) ] Use low values for IFM < pIF(AV) TJ = 180 C. Max. rated VRRM
O
V V mW mA
O
O
2
C/W DC operation C/W 180O sine wave
O C/W 120 rectangular wave
O O
O
C/W Mtg. Surface smooth, flat and greased. Single side. -----
g(oz.)
DO-205AD(DO-13)
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
180 170 160 150 140 130 120 110 100 90 80 70 0
*Rectangular waveform
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 0 100 200 300 400 500
30 60 90 120 180
30 60 90 120 180
DC
600
200
400
600
800
1000
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:460.XX
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
6000
30
5000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
5000
4000
4000
60
3000
60
3000
90
2000
90 120 180
2000
120 180
1000
DC
1000
0 0
*Sinusoidal waveform
0 0 200 400 600 800 1000
*Rectangular waveform
200
400
600
800
1000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop
1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
10000
Instantaneous Forward Current (A)
1000
0.1
100
0.01
10 0.0
125C
25C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:460.XX
DO-205AD (DO-13)
SW43
M24 x 1.5 (3/4" - 16UNF - 2A)
Fig. 7 - Outline Characteristics

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