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AEGIS
SEMICONDUTORES LTDA.
A1A:350.XX
VOLTAGE RATINGS
Part Number A1A:350.02 A1A:350.04 A1A:350.06 A1A:350.08 A1A:350.10 A1A:350.12 A1A:350.14 A1A:350.16 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180OC 200 400 600 800 1000 1200 1400 1600 TJ = -40 to 0OC 200 400 600 800 1000 1200 1400 1600 VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 180OC 300 500 700 900 1100 1300 1500 1700
This datasheet applies to: Metric thread: A1A:350.XX, A1B:350.XX Inch thread: A2A:350.XX, A2B:350.XX
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 350 125 700 7798 IFSM Max. Peak non-rep. surge current 8500 A 9275 10110 276 301 I2t Max. I2t capability 391 426 It
2 1/2
O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial T J = 180 C, rated VRRM applied after surge. Initial T J = 180 C, no voltage applied after surge. Initial T J = 180 C, rated VRRM applied after surge. Initial T J = 180 C, no voltage applied after surge.
O O O O O
C C A C A
IF(RMS) Nom. RMS current
kA2s
t = 8.3 ms t = 10ms
Max. I t
2 1/2
capability
3200 60(~534)
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
AEGIS
SEMICONDUTORES LTDA.
A1A:350.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------TYP. ----------------MAX. UNITS 1.42 0.82 0.25 30.00 0.15 0.17 0.19 0.015 V V mW mA
O O O
TEST CONDITIONS Initial T J = 25 O sinusoidal wave, Ipeak = 1100A. C, TJ = 180 O Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine. C, Use low values for IFM < pIF(AV) TJ = 180 O Max. Rated VRRM C.
C/W DC operation C/W 180O sine wave C/W 120O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. -----
O
----500(17.5) DO-205AD (DO-13)
g(oz.) JEDEC
180
Maximum Allowable Case Temperature
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110
180
Maximum Allowable Case Temperature (C)
170 160 150 140
30
30
60
130
60
90 120
120 110 100
*Rectangular waveform
90 120
100 0 50 100 150 200 250 300 350 400 450
*Sinusoidal waveform
180
DC
0
50
100 150 200 250 300 350 400 450 500 550 600
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:350.XX
2500
Maximum Average Forward Power Loss
30
2000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
2000
Maximum Average Forward Power Loss (W)
1500
60
1500
60
90
90
1000
120 180 DC
1000
120 180
500
500
0
*Sinusoidal waveform
0
*Rectangular waveform
0
100
200
300
400
500
600
700
0
100
200
300
400
500
600
700
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop Characteristics
10000
Instantaneous Forward Current (A)
0.20
Transient Thermal Impedance
Rthjh
Transient Thermal Impedance (C/W)
1000
0.15
Rthjc
100
0.10
10
180C 25C
0.05
1 0 1 2 3 4
0.00 1E-3
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:350.XX
DO-205AD (DO-13)
SW43
M24 x 1.5 (3/4" - 16UNF - 2A)
Fig. 7 - Outline Characteristics

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