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| AEGIS SEMICONDUTORES LTDA. A1A:340.XX VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175OC A1A:340.02 A1A:340.04 A1A:340.06 A1A:340.08 A1A:340.10 A1A:340.12 A1A:340.14 A1A:340.16 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O O TJ = 25 to 175 C This datasheet applies to: Metric thread: A1A:340.XX, A1B:340.XX Inch thread: A2A:340.XX, A2B:340.XX TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600 300 500 700 900 1100 1300 1500 1700 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 340 150 700 7798 IFSM Max. Peak non-rep. surge current 8500 A 9275 10110 276 301 I2t Max. I2t capability 391 426 I2t1/2 Max. I2t1/2 capability F Mounting Force 3200 30(~267) kA2s1/2 N.m(Lbf.in) kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 175 C, no voltage applied after surge. O UNITS O O NOTES O 180 half sine wave C C C A O IF(RMS) Nom. RMS current A 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 175 C, rated VRRM applied after surge. Initial T J = 175 C, no voltage applied after surge. Initial T J = 175 C, rated VRRM applied after surge. O O O t = 8.3 ms O Initial T J = 175 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). - AEGIS SEMICONDUTORES LTDA. A1A:340.XX CHARACTERISTICS PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------TYP. 1.15 --------------MAX. UNITS 1.37 0.97 0.32 30.00 0.15 0.17 0.19 0.03 O O O TEST CONDITIONS Initial T J = 25 C, sinusoidal wave, Ipeak = 1068A. TJ = 175 C, Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine. O O V V mW mA Use low values for IFM < pIF(AV) TJ = 175 C. Max. Rated VRRM O O C/W DC operation C/W 180 sine wave C/W 120 rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. ----O O ----250(8.75) DO-205AB (DO-9) g(oz.) JEDEC Maximum Allowable Case Temperature (C) 200 190 180 170 160 150 140 Maximum Froward Power Dissipation (W) 210 Maximum Allowable Case Temperature 650 600 500 450 Maximum Forward Power Dissipation DC Sen180 Rec180 500 550 Sen120 Rec120 400 350 300 250 200 150 100 50 0 0 100 200 Rec120 Sen180 Rec60 Sen120 Rec180 Sen60 130 120 110 100 0 200 DC 400 600 Sen60 Rec60 300 400 600 700 800 Forward Current (A) Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Power Loss Characteristics AEGIS SEMICONDUTORES LTDA. A1A:340.XX Forward Current vs. Forward Voltage 0.20 Transient Thermal Impedance Transient Thermal Impedance (C/W) Rthjh 1000 0.15 Rthjc Forward Current (A) 100 0.10 10 175C 25C 0.05 1 0.5 1.0 1.5 2.0 0.00 1E-3 0.01 0.1 1 10 100 Forward Voltage (V) Time (s) Fig. 3 - Forward Voltage Drop Characteristics Fig. 4 - Transient Thermal Impedance Characteristics DO-205AB (DO-9) |
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