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| 7MBP75TEA120 Econo IPM series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 75A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 400 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 75 150 75 368 25 50 25 212 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W A A A W V V mA V mA C C C C V N*m Collector-Emitter voltage *1 Collector current Inverter Brake DC 1ms DC Collector power dissipation One transistor *3 Collector current DC 1ms Forward current diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB *2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100% *3 : Pc=125C/IGBT Rth(j-c)=125/0.34=368W [Inverter] Pc=125C/IGBT Rth(j-c)=125/0.59=212W [Brake] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 101sec. 7MBP75TEA120 Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Brake IGBT-IPM Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VCE=1200V Vin terminal open. Terminal Ic=25A Chip Terminal -Ic=25A Chip VDC=600V,Tj=125C IC=75A Fig.1, Fig.6 VDC=600V, IF=75A Fig.1, Fig.6 Min. 1.2 Typ. 2.2 1.6 1.9 2.3 Max. 1.0 3.1 2.0 1.0 2.6 3.7 3.6 0.3 Unit mA V V mA V V s Inverter Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Frequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 15 45 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Current limit resistor RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH VUV VH Condition Tj=125C Tj=125C Tj=125C Tj=125C Fig.4 Surface of IGBT chips Min. 113 38 150 11.0 0.2 Typ. 5 20 0.5 Max. 8 12.5 Unit A A s s C C V V Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance *9 Inverter Brake Case to fin thermal resistance with compound *9 For 1device, Case is under the device IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.34 0.61 0.59 Unit C/W C/W C/W C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 270 Max. Unit g 7MBP75TEA120 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic IALM Ic IALM Ic IALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V 600V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U V CT GND N Ic VinU GNDU 20k + AC200V AC400V Figure 6. Switching Characteristics Test Circuit DC 15V SW2 Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7MBP75TEA120 Block diagram P VccU VinU 4 3 IGBT-IPM ALMU 2 RALM1.5k GNDU 1 VccV VinV 8 7 Pre Driver Vz U ALMV 6 RALM1.5k GNDV 5 VccW VinW ALMW 12 11 10 Pre Driver Vz V Pre Driver RALM1.5k Vz W GNDW 9 Vcc VinX 14 16 Pre Driver Vz GND 13 VinY 17 Pre Driver Vz VinZ 18 Pre Driver Vz Pre-drivers include following functions 1.Amplifier for driver B 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection VinDB ALM 15 19 Pre Driver RALM1.5k Vz N Outline drawings, mm Package Type : P622 M BCFM Mass : 270g 7MBP75TEA120 Characteristics Control circuit characteristics (Representative) IGBT-IPM Power supply current vs. Switching frequency Tc=125C (typ.) 50 Power supply current : Icc (mA) Input signal threshold voltage : Vin(on),Vin(off) (V) P-side N-side Vcc=17V Input signal threshold voltage vs. Power supply voltage (typ.) 2.5 Tj=25C Tj=125C 40 2 } Vin(off) 1.5 30 Vcc=15V Vcc=13V } Vin(on) 20 Vcc=17V Vcc=15V Vcc=13V 1 10 0.5 0 0 5 10 15 20 Switching frequency : fsw (kHz) 25 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 Under voltage vs. Junction temperature (typ.) 14 12 10 8 6 4 2 0 20 Under voltage hysterisis : VH (V) 40 60 80 100 120 140 Under voltage hysterisis vs. Jnction temperature (typ.) 1 Under voltage : VUVT (V) 0.8 0.6 0.4 0.2 0 20 Junction temperature : Tj (C) 40 60 80 100 120 Junction temperature : Tj (C) 140 Alarm hold time vs. Power supply voltage (typ.) 3 Over heating protection : TjOH (C) OH hysterisis : TjH (C) Alarm hold time : tALM (mSec) 2.5 Tc=100C 2 1.5 1 0.5 0 12 Tc=25C 200 Over heating characteristics TjOH,TjH vs. Vcc (typ.) TjOH 150 100 50 TjH 0 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) 13 14 15 16 17 Power supply voltage : Vcc (V) 18 7MBP75TEA120 Main circuit characteristics (Representative) IGBT-IPM Collector current vs. Collector-Emitter voltage (typ.) Tj=25C(Chip) 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 4 Vcc=17V Vcc=15V Collector current vs. Collector-Emitter voltage (typ.) Tj=25C(Terminal) 150 Collector Current : Ic (A) 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 4 Vcc=15V Collector Current : Ic (A) Vcc=17V Vcc=13V Vcc=13V Collector current vs. Collector-Emitter voltage (typ.) Tj=125C(Chip) 150 Collector Current : Ic (A) Collector current vs. Collector-Emitter voltage (typ.) Tj=125C(Terminal) 150 Collector Current : Ic (A) 125 100 Vcc=17V 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 Vcc=15V Vcc=17V Vcc=13V Vcc=15V 75 50 25 0 Vcc=13V 3 3.5 4 0 Collector-Emitter voltage : Vce (V) 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 4 Forward current vs. Forward voltage (typ.) (Chip) 150 125 Forward Current : If (A) 25C 100 125C 75 50 25 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) Forward Current : If (A) Forward current vs. Forward voltage (typ.) (Terminal) 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) 25C 125C 7MBP75TEA120 IGBT-IPM Switching loss : Eon,Eoff,Err (mJ/cycle) Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25 C Switching loss : Eon,Eoff,Err (mJ/cycle) 35 30 25 Eon 20 15 10 5 Err 0 0 25 50 75 100 125 Eoff Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125C 35 30 25 20 15 10 5 0 0 25 50 75 100 125 Err Eoff Eon Collector current : Ic (A) R e ve rs ed bias ed sa fe ope ra ting a re a Vcc =15 V,Tj<=1 25 C(m in .) 700 Collector current : Ic (A) Transient therm al resistance (max.) Thermal res istance : Rth(j-c) (C/W ) 600 1 FW D 500 C ollecto r curre nt : Ic (A) 400 S CSO A (non-repetitive pulse) IGBT 300 0.1 200 100 R BSO A (R epe titive puls e) 0 0 20 0 400 60 0 800 1 00 0 1200 140 0 0.01 0.001 0.01 0.1 1 C olle ctor -Emitte r voltage : V ce ( V) Pulse w idth :Pw (sec ) Power derating for IGBT (max.) (per device) 500 Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 250 Power derating for FWD (max.) (per device) 400 200 300 150 200 100 100 50 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) 7MBP75TEA120 IGBT-IPM Switching time vs. Collector current (typ.) E dc=6 00V,V cc=15V,Tj=25 C 10000 10000 S w itchin g time vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=125 C Switching time : ton,toff,tf (nSec ) Switching time : ton,toff,tf (nSec ) toff toff 1000 ton 1000 ton 100 tf 100 tf 10 0 20 40 60 80 100 Collector current : Ic (A) 120 140 10 0 20 40 60 80 100 120 140 Collector current : Ic (A) Reverse recovery characteristics (typ.) trr,Irr vs.IF trr125C Reverse recovery current:Irr(A) Reverse recovery time:trr(nsec) 100 trr25C Irr125C Irr25C 10 1 0 20 40 60 80 100 Forward current:IF(A) 120 140 7MBP75TEA120 Characteristics Dynamic Brake Characteristics (Representative) IGBT-IPM Collector current vs. Collector-Emitter voltage (typ.) Tj=25C 80 Collector Current : Ic (A) Collector current vs. Collector-Emitter voltage (typ.) Tj=125C 80 Collector Current : Ic (A) Vcc=15V 60 Vcc=17V Vcc=13V 60 Vcc=17V Vcc=15V 40 40 Vcc=13V 20 20 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Transient therm al resistance (m ax.) 1 35 0 R e ve rs ed bias ed sa fe ope ra ting a re a Vcc=1 5V, Tj<= 125 C (min .) Thermal resistance : Rth(j-c) (C/W ) IG BT 30 0 25 0 C ollecto r curre nt : Ic (A) 20 0 SC SO A (non-repe titive puls e) 0.1 15 0 10 0 50 R BSO A (R epetitive puls e) 0 0.01 0 20 0 400 60 0 800 1 00 0 1200 140 0 0.0 01 0.01 0.1 1 C ollector -Emitte r v oltage : V c e ( V) Pulse w idth :Pw (sec) Power derating for IGBT (max.) (per device) 250 Collecter Power Dissipation : Pc (W) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) |
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