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| 2MBI300S-120 1200V / 300A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol VCES VGES Tc=25C IC Tc=80C Tc=25C IC pulse Tc=80C -IC -IC pulse PC Tj Tstg Vis Mounting *2 Terminals *2 Rating 1200 20 400 300 800 600 300 600 2500 +150 -40 to +125 AC 2500 (1min. ) 3.5 4.5 Unit V V A A A A A A W C C V N*m N*m Equivalent Circuit Schematic C2E1 C1 E2 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque G1 E1 G2 E2 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N*m(M5 or M6) Terminals 3.5 to 4.5 N*m(M6) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. Max. - - 3.0 - - 0.6 5.5 7.2 8.5 - 2.3 2.6 - 2.8 - - 36000 - - 7500 - - 6600 - - 0.35 1.2 - 0.25 0.6 - 0.1 - - 0.45 1.0 - 0.08 0.3 - 2.3 3.0 - 2.0 - - - 0.35 Characteristics Min. Typ. - - - - - 0.0167 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=300mA Tc=25 C VGE=15V, IC=300A Tc=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=300A VGE=15V RG=2.7 ohm Tj=25C Tj=125C IF=300A IF=300A, VGE=0V Unit mA A V V pF s Turn-off time Forward on voltage Reverse recovery time V s Thermal resistance characteristics Item Thermal resistance Conditions Max. 0.05 0.10 - IGBT Diode the base to cooling fin C/W C/W C/W Unit *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI300S-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) 700 VGE= 20V IGBT Module Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) 700 600 15V 12V VGE= 20V 15V 12V 600 500 500 Collector current : Ic [ A ] Collector current : Ic [ A ] 400 10V 300 400 10V 300 200 200 100 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 100 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 700 Tj= 25C Tj= 125C 10 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 600 500 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 400 6 300 4 Ic= 600A 2 Ic= 300A Ic=150A 200 100 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 100000 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=300A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 600 15 10000 400 10 5000 Coes Cres 1000 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 200 5 0 0 1000 2000 Gate charge : Qg [ nC ] 0 3000 Gate - Emitter voltage : VGE [ V ] 2MBI300S-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 2.7ohm, Tj= 25C 1000 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 2.7ohm, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 100 200 300 400 500 Collector current : Ic [ A ] 50 0 100 200 300 400 500 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=15V, Tj= 25C 5000 80 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2.7ohm ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Eon(125C) Switching time : ton, tr, toff, tf [ nsec ] tr 1000 60 Eon(25C) 40 Eoff(125C) 500 Eoff(25C) 20 Err(125C) 100 tf Err(25C) 50 1 10 Gate resistance : Rg [ohm] 50 0 0 200 400 600 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=15V, Tj= 125C 200 Eon 600 700 Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>2.7ohm, Tj=<125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 160 500 120 Collector current : Ic [ A ] 50 400 80 Eoff 40 300 200 100 Err 0 1 10 Gate resistance : Rg [ohm] 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 2MBI300S-120 IGBT Module Forward current vs. Forward on voltage (typ.) 700 Tj=125C Tj=25C Irr(125C) 500 500 Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=2.7ohm 600 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(125C) Irr(25C) 100 trr(25C) Forward current : IF [ A ] 400 300 200 100 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 100 200 300 400 500 Forward current : IF [ A ] Transient thermal resistance 0.5 Thermal resistanse : Rth(j-c) [ C/W ] 0.1 0.05 FWD IGBT 0.01 1E-3 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 470g |
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