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HWL34NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1 * *
14.5 dB Typical Gain at 2.4 GHz 5V to 10V Operation
1525.0
Outline Dimensions
1392.5
Description
The HWL34NC is a power GaAs FET designed for various L-band & S-band applications.
9
1235.0
1 10
5
1077.5
920.0
Absolute Maximum Ratings
762.5
2 11
6
VDS VGS ID IG TCH TSTG PT
*
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation
+15V -5V IDSS 6mA 175C -65 to +175C 12W
0.0
605.0
3
447.5
7
12
290.0
4
132.5
8
13
0.0
444.5 75.5 524.0
* mounted on an infinite heat sink
Electrical
Symbol IDSS
Units: m Thickness: 100 5 Chip size 50 Bond Tests 100 x 100 Specifications (TA=25C) f = 2.4 GHz for all RF Pads 1-4 (Gate): Bond Pads 5-8 (Drain): 100 x 100 Parameters & Conditions Units PadsMin. Bond 9-13(Source): 100 x 100 Typ. Max. Saturated Current at VDS=3V, VGS=0V mA 900 1200 1600
VP
Pinch-off Voltage at VDS=3V, ID=60mA
V
-3.5
-2.0
-1.5
gm
P1dB
Transconductance at VDS=3V, ID=600mA Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS
mS
-
700
-
dBm
33
34
-
G1dB
dB
12.5
13.5
-
PAE
%
25
30
-
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL34NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
(GHz)
0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00
lS11l
0.887 0.881 0.876 0.872 0.870 0.865 0.863 0.864 0.862 0.862 0.863 0.864 0.862 0.863 0.863 0.859 0.858 0.857 0.853 0.852 0.851 0.852 0.853 0.855 0.856 0.855 0.857 0.856 0.855 0.851 0.851 0.847 0.846 0.845 0.844 0.847
ANG
-111.36 -122.10 -130.68 -137.70 -143.48 -148.23 -152.62 -156.37 -159.54 -162.41 -165.14 -167.44 -169.77 -172.16 -174.21 -176.36 -178.17 -179.78 178.67 177.35 176.11 174.73 173.43 172.03 170.43 168.76 167.10 165.34 163.66 162.09 160.70 159.50 158.68 157.96 157.35 156.81
lS21l
11.200 9.816 8.678 7.769 7.023 6.399 5.858 5.402 4.996 4.665 4.362 4.090 3.862 3.645 3.470 3.296 3.136 3.011 2.881 2.766 2.659 2.545 2.452 2.354 2.264 2.185 2.109 2.042 1.977 1.916 1.869 1.813 1.761 1.713 1.660 1.604
ANG
114.93 108.73 103.44 98.93 95.01 91.61 88.33 85.47 82.67 79.99 77.38 75.05 72.73 70.35 68.23 66.23 64.02 61.98 60.03 58.02 56.19 54.29 52.38 50.70 48.96 47.30 45.34 43.52 41.64 39.60 37.63 35.90 34.34 32.69 31.47 30.03
lS12l
0.018 0.019 0.021 0.023 0.024 0.026 0.027 0.028 0.030 0.031 0.032 0.034 0.036 0.037 0.039 0.040 0.041 0.044 0.045 0.047 0.049 0.051 0.052 0.053 0.056 0.057 0.059 0.060 0.062 0.064 0.066 0.068 0.071 0.072 0.073 0.075
ANG
59.27 52.79 51.73 52.71 51.99 54.57 52.90 55.60 53.47 54.50 54.73 55.23 54.29 55.08 55.54 55.48 55.20 55.76 56.12 55.98 56.99 56.37 55.14 55.16 55.28 54.91 54.46 54.84 54.03 53.34 53.24 51.96 51.81 51.37 51.12 50.76
lS22l
0.263 0.272 0.280 0.285 0.290 0.293 0.297 0.300 0.303 0.308 0.313 0.321 0.324 0.329 0.332 0.340 0.347 0.347 0.347 0.348 0.356 0.361 0.365 0.375 0.383 0.395 0.397 0.403 0.407 0.411 0.419 0.428 0.437 0.445 0.458 0.467
ANG
-158.55 -159.45 -161.03 -162.06 -162.88 -163.34 -164.20 -163.99 -165.14 -166.30 -167.97 -168.45 -168.88 -169.54 -169.87 -170.42 -170.89 -171.41 -172.09 -172.94 -173.65 -173.94 -175.88 -175.47 -175.35 -173.39 -174.42 -173.91 -175.37 -175.48 -177.03 -178.65 -179.72 179.17 178.27 177.78
Bonding Manner
Gate, drain pad: 1 wire on each pad Source pad: 1 wires on each pad
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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