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| HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Typical Applications The HMC256 is ideal for: * Microwave Radio & VSAT Features High Image Rejection: >30 dB Input IP3: +18 dB Wideband IF: DC to 1.5 GHz Die Size: 1.6 x 1.3 x 0.1 mm 3 MIXERS - CHIP * Test Instrumentation * Military Radios Radar & ECM * Space Functional Diagram General Description The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer MMIC which can be used as an Image Reject Mixer (IRM) or Single Sideband (SSB) upconverter. The chip utilizes two standard Hittite double-balanced mixer cells and a Lange Coupler realized in GaAs MESFET technology. All data is with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.51 mm (<20 mils). A low frequency quadrature hybrid was used to interface the MMIC IF ports to a 120 MHz IF USB output. This provides an example of the I/Q Mixer in an IRM application. The IF may be used from DC to 1.5 GHz. This I/Q Mixer is a more reliable, much smaller replacement to hybrid drop-in style I/Q Mixer assemblies. Electrical Specifi cations, TA = +25 C, As an IRM Parameter Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss Noise Figure (SSB) Image Rejection (IR) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) 1 dB Gain Compression (Input) 24 22 27 24 IF = 70 - 200 MHz LO = +18 dBm Typ. 5.9 - 12 5.7 - 12 DC - 1.5 8 8 32 30 35 30 18 5 10.5 10.5 20 22 27 24 Max. Min. IF = 70 - 200 MHz LO = +15 dBm Typ. 7.1 - 11.7 6.9 - 11.7 DC - 1.5 8 8 30 30 35 30 17 5 10.5 10.5 Max. GHz GHz GHz dB dB dB dB dB dB dBm dBm Units 3-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Conversion Gain to Desired Sideband vs. Temperature @ LO = +15 dBm, IF = 120 MHz USB 0 CONVERSION GAIN (dB) Conversion Gain to Desired Sideband vs. LO Drive, IF = 120 MHz USB 0 -5 CONVERSION GAIN (dB) -5 3 LO = +12 dBm LO = +14 dBm LO = +16 dBm LO = +18 dBm -10 -10 -15 -40C +25C +85C -15 -20 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) -20 5 6 7 8 9 10 11 12 13 RF FREQUENCY (GHz) Image Rejection vs. Temperature LO = +15 dBm, IF = 120MHz USB 50 Image Rejection vs. LO Drive, IF = 120 MHz USB 50 IMAGE REJECTION (dB) 30 IMAGE REJECTION (dB) 40 40 30 20 -30C +25C +85C 20 - 12 dBm - 14 dBm - 16 dBm - 18 dBm 10 10 0 5 6 7 8 9 10 11 12 13 RF FREQUENCY (GHz) 0 5 6 7 8 9 10 11 12 13 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-3 MIXERS - CHIP HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Return Loss @ LO = +15 dBm 0 -5 Isolations @ LO = +15 dBm 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 RF/IF LO/IF LO/RF 3 MIXERS - CHIP RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) RF LO 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) IF Bandwidth @ LO = 15 dBm IF CONVERSION GAIN & RETURN LOSS (dB) 0 -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) IF Conversion Gain IF Return Loss Input IP3 vs. LO Drive, IF = 120 MHz USB 25 THIRD ORDER INTERCEPT (dBm) 20 15 -14 dBm -16 dBm -18 dBm 10 6 6.5 7 FREQUENCY (GHz) 7.5 8 3-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Absolute Maximum Ratings RF / IF Input LO Drive Channel Temperature Continuous Pdiss (T = 85 C) (derate 9.36 mW/C above 85 C) Thermal Resistance (RTH) (junction to die bottom) Storage Temperature Operating Temperature +13 dBm +27 dBm 150 C 0.61 W 106.8 C/W -65 to +150 C -55 to +85 C 3 MIXERS - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BOND PADS ARE .004" SQUARE. 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006". 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Outline Drawing Die Packaging Information [1] Standard WP-3 Alternate [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-5 HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Pad Descriptions Pad Number Function Description Interface Schematic 3 MIXERS - CHIP 1 RF This pin is AC coupled and matched to 50 Ohm. 2 LO This pin is AC coupled and matched to 50 Ohm. 3, 4 IF1, IF2 This pin is DC coupled. For operation to DC pin must not sink/source more than 2 mA of current or failure may result. Backside GND The backside of the die must connect to RF ground. 3-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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