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 Bulletin PD-21042 rev. A 06/06
MBRB10..PbF Series
SCHOTTKY RECTIFIER 10 Amp
IF(AV) = 10Amp VR = 35/ 45V
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform IFRM @ TC = 135C VRRM IFSM @ tp = 5 s sine VF TJ @ 10 Apk, TJ = 125C range
Description/ Features Units
A A V A V C This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150C TJ operation TO-220 and D2Pak packages Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix)
Values
10 20 35/ 45 1060 0.57 - 65 to 150
Case Styles
Base Cathode
2
1
3
N/C
Anode
D2PAK
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1
MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) 35 45 VRWM Max. Working Peak Reverse Voltage (V) MBRB1035PbF MBRB1045PbF
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current IFRM IFSM Peak Repetitive Forward Current Non Repetitive Peak Surge Current
Values
10 20 1060
Units
A A
Conditions
@ TC = 135 C (Rated VR) Rated V R, square wave, 20kHz TC = 135 C 5s Sine or 3s Following any rated load condition and with rated VRRM applied Rect. pulse Surge applied at rated load conditions halfwave, single phase, 60Hz TJ = 25 C, IAS = 2 Amps, L = 4 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical
A 150 8 2 mJ A
EAS IAR
Non-Repetitive Avalanche Energy Repetitive Avalanche Current
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop (1) IRM Max. Instantaneus Reverse Current (1) VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance
Values
0.84 0.57 0.72 0.1 15 0.354 17.6 600 8.0 10000
Units
V V V mA mA V
m
Conditions
@ 20A @ 10A @ 20A TJ = 25 C TJ = 125 C
TJ = TJ max.
TJ = 25 C TJ = 125 C Rated DC voltage
pF nH
VR = 5VDC (test signal range 100Khz to 1Mhz) 25C Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
V/ s (Rated VR)
(1) Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
Values
-65 to 150 -65 to 175 2.0 0.50 2 (0.07) Min. Max. 6 (5) 12 (10)
Units
C C
Conditions
RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Marking Device
C/W DC operation C/W Mounting surface, smooth and greased Only for TO-220 g (oz.) Kg-cm (Ibf-in) Case style D2Pak
MBRB10..
2
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MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
100
100 10 1 0.1 0.01 0.001
T = 150C
J
Reverse Current - IR (mA)
T = 150C J 125C 100C 75C 50C 25C
InstantaneousForward Current - IF (A)
0.0001
TJ = 125C 10 TJ = 25C
0
5
10
15 20 25 30 35 40 45
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
1000 Junction Capacitance - C T (pF)
TJ = 25C
1 0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
100
0
10
20
30
40
50
Forward Voltage Drop - V FM (V)
Revers Voltage - VR (V) e
Fig. 1 - Max. Forward Voltage Drop Characteristics
10 T hermal Imped ance Z thJC (C/ W)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
1
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
P DM
0.1
S ingle Pulse (T hermal Resistance)
t1 Notes: t2
1. Duty factor D = t 1/ t 2 2. Peak T = P x Z thJC+ TC J DM 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100
t 1 , Rectangular Pulse Duration (S onds) ec
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
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3
MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
150 Allowable Case T emperature - (C)
10 Average Power Loss - (Watts) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMSLimit DC
145 DC 140 135 130 125
see note (2)
8
6
S quare wave (D = 0.50) Rated VR applied
4
2
120
0
3
6
9
12
15
0
0
2
4
6
8
10
12
14
16
Average Forward Current - I F(AV) (A)
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive S urge Current - I FSM (A)
1000
At Any Rated Load Condition And With Rated V Applied RRM Following S urge 100 10 100 1000 10000
S quare Wave Pulse Duration - t p (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
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MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
Outline Table
Conform to JEDEC outline D2Pak (SMD-220) Dimensions in millimeters and (inches)
Part Marking Information
THIS IS A MBRB1045 LOT CODE 8024 ASSEMBLED ON WW 02, 2000
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
MBRB1045
DATE CODE YEAR 0 = 2000 WEEK 02 P = LEAD-FREE
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MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
Tape & Reel Information
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
MBR
1 1 2 3 4 5 6 6 -
B
2
10
3
45
4
TRL PbF
5 6
Essential Part Number B = Surface Mount 35 45 = 35V = 45V Current Rating (10 = 10A) Voltage Ratings none = Tube (50 pieces) TRL = Tape & Reel TRR = Tape & Reel none = Standard Production PbF = Lead-Free
6
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MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
MBR1045 ******************************************** * This model has been developed by * * Wizard SPICE MODEL GENERATOR (1999) * * (International Rectifier Corporation) * * Contains Proprietary Information * ******************************************** * SPICE Model Diode is composed by a * * simple diode plus paralled VCG2T * ******************************************** .SUBCKT MBR1045 ANO CAT D1 ANO 1 DMOD (0.04688) *Define diode model .MODEL DMOD D(IS=2.14849701885607E-04A,N=1.50833541375759,BV=52V, + IBV=0.431942180477539A,RS= 0.000618816,CJO=1.90645706123736E-08, + VJ=2.31227489200037,XTI=2, EG=0.684712841282824) ******************************************** *Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES(R=1,TC1=-29.9118224426661) GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-6.195028E-06/-29.91182)*((V(2,CAT)*1E6)/(I(VX)+1E-6)1))+1)*4.475503E-02*ABS(V(ANO,CAT)))-1)} ******************************************** .ENDS MBR1045 Thermal Model Subcircuit .SUBCKT MBR1045 5 1 CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM1 RTHERM1 5 4 3 2 5 4 3 2 4 3 2 1 4 3 2 1 1.40E+00 1.46E+01 9.30E+01 1.69E+03 5.79E-01 7.72E-01 4.45E-01 1.93E-01
.ENDS MBR1045
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 06/06
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