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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5359-60SL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level HIGH POWER P1dB=48.0dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G ( Ta= 25C ) UNIT dBm dB A dB % dBc A C MIN. 47.0 8.0 -42 TYP. MAX. 48.0 9.0 13.2 42 -45 15.0 0.8 11.8 100 CONDITIONS VDS=10V f = 5.3 to 5.9GHz IDSset=9.5A add IM3 IDS2 Tch Two-Tone Test Po=36.5dBm (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 28 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) ( Ta= 25C ) UNIT S V A V C/W MIN. -1.0 -5 TYP. 20 -1.8 38 0.6 MAX. -3.0 0.8 CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM5359-60SL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 20 187.5 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM5359-60SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V Pout(dBm) 50 IDS13.2A Pin=39.0dBm 49 48 47 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 51 freq.=5.9GHz 50 49 48 VDS=10V IDSset9.5A 90 80 Pout 70 60 50 Pout(dBm) 47 46 45 44 43 42 33 35 37 39 41 43 add 40 30 20 Pin(dBm) 3 add(%) TIM5359-60SL Power Dissipation(PT) vs. Case Temperature(Tc) 200 PT(W) 100 0 0 40 80 120 160 200 Tc( C ) IM3 vs. Power Characteristics -10 VDS=10V IDSset9.5A -20 freq.=5.9GHz f=5MHz -30 IM3(dBc) -40 -50 -60 32 34 36 38 40 42 Pout(dBm) @Single carrier level 4 |
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