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| SKKT 273; SKKH 273 THYRISTOR BRIDGE,SCR,BRIDGE Symbol Conditions Values Units SEMIPACK(R) 3 Thyristor / Diode Modules SKKT 273 SKKH 273 Preliminary Data Features Typical Applications 1) SKKT SKKH 1 26-07-2007 GIL (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 26-07-2007 GIL (c) by SEMIKRON SKKT 273; SKKH 273 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 26-07-2007 GIL (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 26-07-2007 GIL (c) by SEMIKRON |
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