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| SK101GB065TF Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 3 IGBT Module SK101GB065TF Inverse Diode Module Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB-T 1 21-02-2007 SCT (c) by SEMIKRON SK101GB065TF Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 3 IGBT Module SK101GB065TF Temperature sensor Target Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications Remarks GB-T 2 21-02-2007 SCT (c) by SEMIKRON SK101GB065TF Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 21-02-2007 SCT (c) by SEMIKRON SK101GB065TF Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 21-02-2007 SCT (c) by SEMIKRON SK101GB065TF UL Recognized File no. E 63 532 Dimensions in mm 5 21-02-2007 SCT (c) by SEMIKRON |
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