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| SEMiX 303GD12T4c Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R)33c Trench IGBT Modules SEMiX 303GD12T4c Inverse Diode Module Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GD 1 16-07-2007 SCH (c) by SEMIKRON SEMiX 303GD12T4c Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX(R)33c Trench IGBT Modules Module SEMiX 303GD12T4c Target Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Remarks This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GD 2 16-07-2007 SCH (c) by SEMIKRON SEMiX 303GD12T4c Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 16-07-2007 SCH (c) by SEMIKRON SEMiX 303GD12T4c Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' 4 16-07-2007 SCH (c) by SEMIKRON SEMiX 303GD12T4c 5 16-07-2007 SCH (c) by SEMIKRON |
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