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SEMiX 302KH ... THYRISTOR BRIDGE,SCR,BRIDGE Symbol Conditions Values Units SEMiX(R) 2s Rectifier (Thryr./Diode) Module SEMiX 302KT SEMiX 302KH Preliminary Data Features Typical Applications KH KT 1 21-06-2007 SCH (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor/diode vs. on-state current Fig. 1R Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L Power dissipation of one module vs. rms current Fig. 2R Power dissipation of one module vs. case temperature Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temperature 2 21-06-2007 SCH (c) by SEMIKRON SEMiX 302KH ... THYRISTOR BRIDGE,SCR,BRIDGE Fig. 4L Power dissipation of three modules vs. direct current Fig. 4R Power dissipation of three modules vs. case temperature Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 21-06-2007 SCH (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 21-06-2007 SCH (c) by SEMIKRON |
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