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6MBI35S-140
IGBT MODULE ( S series) 1400V / 35A 6 in one-package
Features
* Compact Package * P.C.Board Mount Module * Low VCE(sat)
IGBT Modules
Applications
* Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25C current Tj=75C 1ms Tj=25C Tj=75C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A
1(Gu) 2(Eu) 6(Ev)
Equivalent Circuit Schematic
13(P)
5(Gv)
9(Gw) 10(Ew)
A A W C C V N*m
16(U) 7(Gy) 3(Gx) 4(Ex) 8(Ey)
15(V)
14(W)
11(Gz) 12(Ez)
17(N)
*1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N*m (M5)
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. - - - - 5.5 7.2 - 2.4 - 3.0 - 4200 - 875 - 770 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.6 - 2.2 - - Conditions Max. 1.0 0.2 8.5 2.75 - - - - 1.2 0.6 - 1.0 0.3 3.4 - 0.35 VGE=0V, VCE=1400V VCE=0V, VGE=20V VCE=20V, IC=35mA Tj=25C VGE=15V, IC=35A Tj=125C VGE=0V VCE=10V f=1MHz VCC=800V IC=35A VGE=15V RG=33 Tj=25C Tj=125C IF=35A IF=35A, VGE=0V Unit mA A V V pF
s
Turn-off time Diode forward on voltage Reverse recovery time
V s
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.05 Conditions Max. 0.52 0.90 - IGBT FWD the base to cooling fin C/W C/W C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI35S-140
Characteristics
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 80 15V 12V VGE= 20V 80
IGBT Module
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.)
VGE= 20V 15V 12V
60
60
Collector current : Ic [ A ]
Collector current : Ic [ A ]
10V 40
10V 40
20
20
8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4
8V
5
Collector - Emitter voltage : VCE [ V ]
80
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Tj= 25C Tj= 125C
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 10
8 60
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
6
40
4 Ic= 70A 2 Ic= 35A Ic= 17.5A
20
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10000 1000
[ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25C 25
800
20
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
600
15
1000 Coes
400
10
200
5
Cres
100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 100 200 Gate charge : Qg [ nC ] 300
0 400
Gate - Emitter voltage : VGE [ V ]
Cies
6MBI35S-140
IGBT Module
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 33ohm, Tj= 25C 1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 33ohm, Tj= 125C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton
ton tr
tr
100 tf 50 0 20 40 60 Collector current : Ic [ A ]
100 tf
50 0 20 40 60 Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=15V, Tj= 25C 5000 14
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=33ohm Eon(125C) 12
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
10 Eon(25C) 8 Eoff(125C) Eoff(25C) 4 Err(125C) 2 Err(25C)
1000
500 toff
6
ton 100 tr tf 50 10
0 50 100 500 0 20 40 60 Gate resistance : Rg [ohm] Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=15V, Tj= 125C 25 Eon 100
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>33ohm, Tj=<125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
20
80
15
Collector current : Ic [ A ]
500
60
10 Eoff
40
5
20
Err 0 10 0 50 100 0 200 400 600 800 1000 1200 1400 1600 Gate resistance : Rg [ohm] Collector - Emitter voltage : VCE [ V ]
6MBI35S-140
Forward current vs. Forward on voltage (typ.) 80 Tj=125C Tj=25C 300
IGBT Module
Reverse recovery characteristics (typ.) Vcc=800V, VGE=15V, Rg=33ohm
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
60
trr(125C) 100 trr(25C)
Forward current : IF [ A ]
40
Irr(125C)
20
Irr(25C)
0 0 1 2 Forward on voltage : VF [ V ] 3 4
10 0 10 20 30 40 50 60 Forward current : IF [ A ]
Transient thermal resistance 3
1
FWD IGBT
Thermal resistanse : Rth(j-c) [ C/W ]
0.1
0.01 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
M623
Outline Drawings, mm
107.51 4-o6.10.3 2-o5.50.3 16.02
17
930.3 15.24 15.24 15.24 15.24
13
69.60.3
o2.50.1
27.60.3
320.3
41.91
451
+ 0.5 0
1.5
930.3 A A 1.150.2 o2.10.1 Section A-A o0.4
12
11
1
3.81
3.50.5
1.50.3
16.02
11.43 11.43 11.43 11.43 11.43
20.51
2.50.3
171
6.50.5
mass : 180g
10.2
0.80.2
Shows theory dimensions
6

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