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| TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications * * * * * Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 7.0 S (typ.) Low leakage current : P Channel IDSS = -10 A (VDS = -30 V) N Channel IDSS = 10 A (VDS = 30 V) Enhancement mode : P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm 0.330.05 0.05 M A 8 5 2.40.1 0.475 1 4 0.65 2.90.1 B A 0.05 M B 0.80.05 S 0.025 S 0.170.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg -30 -30 20 -3.4 -13.6 1.48 1.23 0.58 0.36 0.75 -1.7 0.12 150 -55~150 Rating 30 30 20 4.2 16.8 1.48 1.23 W 0.58 0.36 2.86 2.1 mJ A mJ C C Unit V V V A 1Source1 2Gate1 3Source2 4Gate2 5Drain2 6Drain2 7Drain1 8Drain1 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA TOSHIBA 2-3V1G Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 1 2 2.80.1 3 4 Note: For Notes 1 to 6, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking (Note 6) 8 7 6 5 8402 1 2 3 Lot No. 4 This transistor is an electrostatic-sensitive device. Handle with caution. 1 2006-11-13 TPCP8402 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 84.5 C/W 101.6 215.5 C/W 347.2 Unit Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: P Channel: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -1.7 A N Channel: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 2.1 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: on the lower left of the marking indicates Pin 1. Weekly code (3 digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-13 TPCP8402 P-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 0V VGS -10 V ID = -1.7 A VOUT RL = 8.82 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4.5 V, ID = -1.7 A VGS = -10 V, ID = -1.7 A VDS = -10 V, ID = -1.7 A Min -30 -15 -0.8 3.0 Typ. 80 60 6.0 600 60 70 5.3 12 8.4 34 14 1.4 2.7 Max 10 10 -2.0 105 72 ns nC pF Unit A A V V m S VDD -15 V - Duty < 1%, tw = 10 s = VDD -24 V, VGS = -10 V, - ID = -3.4 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -3.4 A, VGS = 0 V Min Typ. Max -13.6 1.2 Unit A V 3 2006-11-13 TPCP8402 N-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 10 V, ID = 6 A ton 4.7 10 V 0V ID = 2.1 A VOUT RL = 7.14 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 2.1 A VGS = 10 V, ID = 2.1 A VDS = 10 V, ID = 2.1 A Min 30 15 1.3 3.5 Typ. 58 38 7.0 470 60 80 5.2 Max 10 10 2.5 77 50 pF Unit A A V V m S 8.3 ns 4.0 VDD 15 V - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Duty < 1%, tw = 10 s = 22 10 1.7 2.4 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 4.2 A, VGS = 0 V Min Typ. Max 16.8 -1.2 Unit A V 4 2006-11-13 TPCP8402 P-ch ID - VDS -5 -10 -6 -4 -3.5 -3.0 Common source Ta = 25C Pulse test -2.8 -10 -10 -3.5 -3.0 -8 -4.5 -6 -6 -2.8 -4 -2.7 -2.6 -2 -2.5 VGS = -2.3 V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -1 -2 -3 -4 -5 ID - VDS Common source Ta = 25C Pulse test (A) ID -3 Drain current -2.6 -2 -2.5 -1 VGS = -2.3 0 Drain-source voltage VDS (V) Drain current -2.7 ID (A) -4.5 Drain-source voltage VDS (V) ID - VGS -8 -2.0 VDS - VGS VDS (V) Common source Ta= 25 -1.6 Pulse test Common source VDS = -10 V ID (A) -6 Pulse test -4 Drain-source voltage -1.2 Drain current -0.8 -1.6 -0.4 -0.8 0 0 -2 -4 -6 ID = -3.2A -2 Ta = -55C 100 0 25 -2 -3 -4 -5 0 -1 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 1000 Common source VDS = -10 V Common source Ta = 25C RDS (ON) - ID Drain-source ON resistance RDS (ON) (m) Forward transfer admittance Yfs (S) Pulse test Pulse test Ta = -55C 10 100 25 100 VGS = -4.5 V -10 1 -0.1 -0.3 -1 -3 -10 10 0.1 Drain current ID (A) Drain current -1 ID (A) -10 5 2006-11-13 TPCP8402 P-ch RDS (ON) - Ta 150 10 IDR - VDS (A) -10 -3.0 -5.0 -1.0 VGS = 0 V Drain-source ON resistance RDS (ON) (m ) 5 3 ID = -0.8A, -1.5A, -4.5A 90 VGS = -4.5V 60 VGS = -10V 30 Common source Pulse test 0 -80 -40 0 40 80 120 160 ID = -0.8A, -1.5A, -4.5A Drain reverse current IDR 120 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0 0.3 0.6 0.9 1.2 1.5 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 -2.0 Vth - Ta Vth (V) Gate threshold voltage Ciss (pF) -1.5 1000 Capacitance C Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 -0.1 -1 -3 -5 -10 -30 -50 -100 Crss -1.0 Common source -0.5 VDS = -10 V ID = -200A Pulse test 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t=5s Dynamic input/output characteristics -30 -15 (W) (V) PD 1.6 -25 VDS VDD = -24V VGS -10 VDD = -6V Drain power dissipation (2) 1.2 -20 Drain-source voltage -15 -12 -10 -6 -5 -12 Common source ID = -3.2 A Ta = 25C Pulse test 0 0 4 8 0 16 -5 0.8 (3) 0.4 (4) -24 0 0 25 50 75 100 125 150 175 200 12 Ambient temperature Ta (C) Total gate charge Qg (nC) 6 2006-11-13 Gate-source voltage VGS VDS (1) (V) TPCP8402 P-ch rth - tw 1000 Single pulse (4) (3) (2) 100 (1) Transient thermal impedance rth (/W) 10 1 0.001 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 (A) ID max (Pulse) * -10 1 ms * 10 ms * -1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 Drain current ID VDSS max -10 -100 Drain-source voltage VDS (V) 7 2006-11-13 TPCP8402 N-ch ID - VDS 5 8.0 10 4.5 3.8 3.5 6.0 Common source Ta = 25C Pulse test 10 10 8.0 6.0 4.5 ID - VDS Common source Ta = 25C Pulse test 3.8 (A) ID 3 ID (A) 4 8 Drain current 2 3.0 1 VGS = 2.8 V 0 Drain current 3.2 6 3.5 4 3.2 2 3.0 VGS = 2.8 V 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 8 2.0 VDS - VGS Common source VDS (V) Common source VDS = 10 V Ta= 25 1.6 Pulse test ID (A) 6 Pulse test 4 Drain-source voltage 1.2 Drain current 0.8 2 100 25 0.4 1 0 0 2 4 2 ID = 4A 0 Ta = -55C 0 1 2 3 4 5 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 100 Common source VDS = 10 V Pulse test Ta = -55C 10 100 25 RDS (ON) - ID Drain-source ON resistance RDS (ON) (m) Forward transfer admittance Yfs (S) 4.5 30 VGS = 10V 1 Common source Ta = 25C Pulse test 1 10 0.1 0 0.3 1 3 10 10 0.1 Drain current ID (A) Drain current ID (A) 8 2006-11-13 TPCP8402 N-ch RDS (ON) - Ta 120 Common source Pulse test 100 80 VGS = 4.5V 60 2A 1A ID = 4A 10 10 IDR - VDS (A) 5.0 3.0 1.0 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0 Drain-source ON resistance RDS (ON) (m ) 5 3 40 ID = 4, 2, 1A 20 VGS = 10V 0 -80 -40 Drain reverse current IDR 0 40 80 120 160 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 3 Vth - Ta Vth (V) Gate threshold voltage 2 1 Ciss (pF) 100 C Coss Crss Capacitance 10 Common source VGS = 0 V f = 1 MHz Ta = 25C 1 0.1 0.3 Common source VDS = 10 V ID = 200A Pulse test 1 3 5 10 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t=5s Dynamic input/output characteristics 30 15 (W) VDS (V) PD 1.6 25 VDS VDD = 24V VGS VDD = 6V Drain power dissipation (2) 1.2 20 10 Drain-source voltage 15 12 10 6 5 24 12 Common source ID = 4.0A Ta = 25C Pulse test 0 0 4 8 12 0 16 5 0.8 (3) 0.4 (4) 0 0 25 50 75 100 125 150 175 200 Ambient temperature Ta (C) Total gate charge Qg (nC) 9 2006-11-13 Gate-source voltage VGS (1) (V) TPCP8402 N-ch rth - tw 1000 Single pulse (4) (3) (2) 100 (1) Transient thermal impedance rth (/W) 10 1 0.001 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 (A) ID max (Pulse) * 10 1 ms * Drain current ID 10 ms * 1 0.1 0.1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 VDSS max 10 100 Drain-source voltage VDS (V) 10 2006-11-13 TPCP8402 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2006-11-13 |
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