NTE5360 Silicon Controlled Rectifier (SCR) 35 Amp
Absolute Maximum Ratings and Electrical Characteristics: Repetitive Peak Off State Voltage (Gate Open, TJ = +110C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Reverse Voltage (Gate Open, TJ = +110C), VRRM . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +80C, 360 Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 40A Peak Surge (Non-Repetitive) On-State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . 400A Peak Gate Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Power (IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Maximum Repetitive Peak Off-State Current (At VDRM, TC = +110C), IDRM . . . . . . . . . . . . . . 1.0mA Maximum Repetitive Peak Reverse Current (At VRRM, TC = +110C), IRRM . . . . . . . . . . . . . . . 1.0mA Maximum Peak On-State Voltage (TC = +25C, IT = 40A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V Maximum DC Holding Current (Gate Open, TC = +25C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Critical Rate of Rise of Off-State Voltage (Gate Open, TC = +110C), dv/dt . . . . . . . . . . . . 200V/s Maximum DC Gate Trigger Current (VA = 12V, RL = 60, TC = +25C), IGT . . . . . . . . . . . . . . 25mA Maximum DC Gate Trigger Voltage (VA = 12V, RL = 60, TC = +25C), VGT . . . . . . . . . . . . . . . 2.0V gate Controlled Turn-On Time (For td and tr, IGT = 150mA, TC = +25C), tgt . . . . . . . . . . . . . . 2.5s Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4C/W
.562 (14.28) Max
Gate
Cathode
1.193 (30.33) Max
.200 (5.08) Max
.453 (11.5) Max
Anode 1/4-28 UNF-2A
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