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| PD -94912 IRG4PC40KDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 42 25 84 84 15 84 10 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A s V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. 0.24 6 (0.21) Max. 0.77 1.7 40 Units C/W g (oz) www.irf.com 1 12/29/03 IRG4PC40KDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 V Temperature Coeff. of Breakdown Voltage 0.46 V/C Collector-to-Emitter Saturation Voltage 2.10 2.6 2.70 V 2.14 Gate Threshold Voltage 3.0 6.0 Temperature Coeff. of Threshold Voltage -13 mV/C Forward Transconductance 7.0 14 S Zero Gate Voltage Collector Current 250 A 3500 Diode Forward Voltage Drop 1.3 1.7 V 1.2 1.6 Gate-to-Emitter Leakage Current 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 25A VGE = 15V See Fig. 2, 5 IC = 42A IC = 25A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 25A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 15A See Fig. 13 IC = 15A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets tsc t d(on) tr t d(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. 10 Typ. Max. Units Conditions 120 180 IC = 25A 16 24 nC VCC = 400V See Fig.8 51 77 VGE = 15V 53 33 TJ = 25C ns 110 160 IC = 25A, VCC = 480V 100 150 VGE = 15V, RG = 10 0.95 Energy losses include "tail" 0.76 mJ See Fig. 9,10,14 1.71 2.3 s VCC = 360V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V 52 TJ = 150C, 37 IC = 25A, VCC = 480V ns 220 VGE = 15V, RG = 10 140 Energy losses include "tail" 2.67 mJ See Fig. 11,14 13 nH Measured 5mm from package 1600 VGE = 0V 130 pF VCC = 30V See Fig. 7 55 = 1.0MHz 42 60 ns TJ = 25C See Fig. 74 120 TJ = 125C 14 IF = 15A 4.0 6.0 A TJ = 25C See Fig. 6.5 10 TJ = 125C 15 VR = 200V 80 180 nC TJ = 25C See Fig. 220 600 TJ = 125C 16 di/dt = 200As 188 A/s TJ = 25C See Fig. 160 TJ = 125C 17 2 www.irf.com IRG4PC40KDPBF 30 For both: 25 LOAD CURRENT (A) 20 Square wave: Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 35 W 15 60% of rated voltage I 10 5 Ideal diodes 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) TJ = 150C TJ = 25C TJ = 150 o C 10 10 TJ = 25 oC 1 0.1 V GE = 15V 20s PULSE WIDTH 1 10 1 5 7 V CC = 50V 5s PULSE WIDTH A 9 11 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC40KDPBF 50 5.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) 40 IC = 50 A 4.0 30 3.0 20 IC = 25 A 2.0 10 IC =12.5 A 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40KDPBF 3000 2500 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 25A 16 C, Capacitance (pF) 2000 Cies 1500 12 8 1000 500 4 0 Coes Cres 1 10 0 VCE , Collector-to-Emitter Voltage (V) 0 20 40 60 80 100 120 140 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.00 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 25A 100 RG = 10 Ohm VGE = 15V VCC = 480V 2.50 10 IC = 50 A IC = 25 A 2.00 1 IC = 12.5 A 1.50 0 R Gate Resistance ) RGG, Gate Resistance ((Ohm) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC40KDPBF 8.0 6.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = Ohm 10 T J = 150 C VCC = 480V VGE = 15V 1000 VGE = 20V T J = 125 o C 125C 100 4.0 10 2.0 0.0 0 10 20 30 40 50 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com 100 100 IRG4PC40KDPBF VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C 80 I F = 30A I F = 30A 60 I IRRM - (A) t rr - (ns) 10 IF = 15A I F = 15A 40 I F = 5.0A I F = 5.0A 20 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 800 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C 600 VR = 200V TJ = 125C TJ = 25C IF = 30A di(rec)M/dt - (A/s) Q RR - (nC) 400 I F = 5.0A I F = 15A I F = 30A I F = 15A IF = 5.0A 200 0 100 di f /dt - (A/s) 1000 100 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PC40KDPBF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = t1+5S Vce Ic Vceic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dtdt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC40KDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC40KDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 10 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-247AC Package Outline 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A- Dimensions are shown in millimeters (inches) -D5.30 (.209) 4.70 (.185) 0.25 (.010) M D B M 5.50 (.217) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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