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| UNISONIC TECHNOLOGIES CO., LTD 60N75 60Amps, 75Volts N-CHANNEL POWER MOSTFET DESCRIPTION The UTC 60N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. Power MOSFET FEATURES * RDS(ON) = 16m @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 60N75L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Normal Lead Free Plating 60N75-TA3-T 60N75L-TA3-T TO-220 60N75-TF3-T 60N75L-TF3-T TO-220F 60N75-TM3-T 60N75L-TM3-T TO-251 60N75-TN3-R 60N75L-TN3-R TO-252 60N75-TN3-T 60N75L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright (c) 2007 Unisonic Technologies Co., Ltd. 1 of 8 QW-R502-112.A 60N75 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain to Source Voltage SYMBOL VDSS Power MOSFET RATINGS UNIT 75 V TC = 25 60 A ID Continuous Drain Current TC = 100 56 A Drain Current Pulsed (Note 1) IDM 300 A 20 Gate to Source Voltage VGS V Single Pulsed (Note 2) EAS 900 mJ Avalanche Energy 300 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25 220 W Total Power Dissipation PD Derating above 25 1.4 W/ Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL JA JC MIN TYP MAX 62.5 0.8 UNIT /W /W ELECTRICAL CHARACTERISTICS (TC = 25 , unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS TEST CONDITIONS MIN 75 0.08 20 250 100 -100 2.0 4.0 16 3300 530 80 12 79 80 52 90 20 30 TYP MAX UNIT V V/ A A nA nA V m pF pF pF ns ns ns ns nC nC nC VGS = 0 V, ID = 250 A ID = 1mA, BVDSS/ TJ Referenced to 25 VDS = 75 V, VGS = 0 V IDSS VDS = 75 V, VGS = 0 V, TJ = 150 VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 A VGS = 10 V, ID = 48 A VGS = 0 V, VDS = 25 V f = 1MHz ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) VDD = 38V, ID =48A, VGS=10V (Note 4, 5) VDS = 60V, ID = 48A, VGS = 10 V (Note 4, 5) 140 35 45 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-112.A 60N75 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS = 48A, VGS = 0 V Continuous Source Current IS Pulsed Source Current ISM IS = 48A, VGS = 0 V Reverse Recovery Time tRR dIF / dt = 100 A/s Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, VDD = 50V, RG=20, Starting TJ=25 3. ISD48A, di/dt300A/s, VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300s, Duty Cycle2% 5. Essentially independent of operating temperature. MIN Power MOSFET TYP MAX 1.4 75 300 UNIT V A ns C 90 300 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-112.A 60N75 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-112.A 60N75 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RG VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-112.A 60N75 TYPICAL CHARACTERISTICS On-State Characteristics VGS Top: 15V 10V 8V 7V 102 6V 5.5V 5V Bottorm: 4.5V Power MOSFET Transfer Characteristics Drain Current, ID (A) Drain Current, ID (A) 25 101 4.5V 101 150 102 Note: 1. VDS=25V 2. 20s Pulse Test 100 2 3 45 67 8 9 10 Gate-Source Voltage, VGS (V) 100 10-1 101 100 Drain-Source Voltage, VDS (V) Drain-Source On-Resistance, RDS(ON) (m ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate-to-Source Voltage, VGS (V) Capacitance (pF) Reverse Drain Current, ISD (A) 6 of 8 QW-R502-112.A 60N75 Thermal Response, Z Drain Current , ID (A) JC (t) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) TYPICAL CHARACTERISTICS(Cont.) UNISONIC TECHNOLOGIES CO., LTD Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON), (Normalized) () www.unisonic.com.tw Power MOSFET 7 of 8 QW-R502-112.A 60N75 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-112.A |
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