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| Ordering number : ENN8359 VEC2607 VEC2607 Features * * N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications * * The best suited for inverter applications. The VEC2607 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. Low voltage drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 20 10 4.5 18 0.9 1.0 150 --55 to +150 P-channel -12 8 --4 -16 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2A, VGS=4V ID=1A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 20 1 10 0.5 4.5 7.5 32 40 55 570 110 80 42 57 80 1.3 V A A V S m m m pF pF pF Symbol Conditions Ratings min typ max Unit Marking : CA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PE MS IM TB-00001478 No.8359-1/6 VEC2607 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=6.4V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--2A ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.3A, VGS=-1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=-4A VDS=--6V, VGS=--4.5V, ID=-4A VDS=--6V, VGS=--4.5V, ID=-4A IS=--4A, VGS=0V --0.3 4.5 7.6 37 54 76 940 230 180 14 120 97 110 11 1.6 2.8 --0.85 --1.5 49 75 107 --12 --10 10 --1.0 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=4.5A VDS=10V, VGS=4V, ID=4.5A VDS=10V, VGS=4V, ID=4.5A IS=4.5A, VGS=0V Ratings min typ 15 105 50 52 7.6 1.2 2.1 0.85 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7012-002 0.25 Electrical Connection 8 0.15 7 6 5 0.3 8 7 65 0.25 1 2 2.9 3 0.65 4 1 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 2 3 4 2.8 2.3 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 0.07 No.8359-2/6 VEC2607 Switching Time Test Circuit [N-channel] VIN 4V 0V VIN ID=2.5A RL=4 VOUT VDD=10V 0V --4.5V VIN ID= --2A RL=3 VOUT [P-channel] VIN VDD= --6V D PW=10s D.C.1% D PW=10s D.C.1% G VEC2607 P.G 50 G S P.G 50 VEC2607 S --4.5V --3.5V --3.0 V 3.0 ID -- VDS V [Nch] 1.5 V --3.0 ID -- VDS --1.8V --2.5 V [Pch] 6.0 V 2.5 V 2.5V 2.0 V 5.0 --2.5 3.0 Drain Current, ID -- A V 8. 0V 4.0 1.0 10.0 1.5 --1.5 --1.5 V 2.0 Drain Current, ID -- A V --2.0 --1.0 VGS= --1.0V 0.5 --0.5 VGS=1.0V 0 0 0.1 0.2 0.3 0.4 IT08593 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 3.0 Drain-to-Source Voltage, VDS -- V --6 IT08898 ID -- VGS [Nch] ID -- VGS [Pch] VDS=10V 2.5 --5 VDS= --6V Drain Current, ID -- A 2.0 Drain Current, ID -- A --4 1.5 --3 Ta=7 5C 1.0 --25 C --2 C Ta= 7 0.5 --1 0 0 0.5 1.0 1.5 2.0 IT08595 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Gate-to-Source Voltage, VGS -- V 120 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 160 --25 C 25 25C 5C IT08899 [Nch] Ta=25C RDS(on) -- VGS [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 100 ID=2A 1A 0.3A Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 ID= --2.0A 120 80 --1.0A 100 80 60 40 20 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 --5.5 --6.0 --6.5 --0.3A 60 40 20 0 0 1 2 3 4 5 6 7 8 IT09784 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V IT09785 No.8359-3/6 VEC2607 120 RDS(on) -- Ta [Nch] 140 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 100 120 100 80 60 40 20 =1.8V , VGS 0.3A I D= =2.5V , V GS =1.0A ID =4.0V A, V GS I D=2.0 80 60 40 --2.5V S= .0A, VG 1 I D= -V = --4.5 A, V GS = --2.0 ID --0 I D= = --1 VGS .3A, .8V 20 0 --60 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 10 IT09786 yfs -- ID Ambient Temperature, Ta -- C 3 IT09787 [Nch] Forward Transfer Admittance, yfs -- S 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 yfs -- ID [Pch] Forward Transfer Admittance, yfs -- S VDS=10V 7 VDS= --6V 5 Ta 3 -2 =- C 5 C 75 = Ta 5 --2 C C 25 C 25 C 75 2 1.0 0.1 2 3 5 7 1.0 2 3 5 IT09308 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.2 IS -- VSD Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 5 7 --10 IT03869 [Nch] VGS=0V VGS=0V IS -- VSD [Pch] Source Current, IS -- A Source Current, IS -- A 75 25 C --25 C C Ta= 75 C 25 C --0.4 --0.6 Ta= 0.4 0.6 0.8 1.0 1.2 1.4 IT08708 --0.01 --0.2 --25 C --0.8 --1.0 --1.2 IT08902 Diode Forward Voltage, VSD -- V 5 3 SW Time -- ID Diode Forward Voltage, VSD -- V 5 3 [Nch] SW Time -- ID [Pch] VDD= --6V VGS= --4.5V VDD=10V VGS=4V Switching Time, SW Time -- ns Switching Time, SW Time -- ns 2 2 td (off) 100 7 5 3 2 100 7 5 3 2 td(off) tf tf tr tr td(on) td(on) 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 7 --0.1 2 3 5 7 --1.0 2 3 5 IT09310 Drain Current, ID -- A IT09309 Drain Current, ID -- A No.8359-4/6 VEC2607 2 Ciss, Coss, Crss -- VDS [Nch] f=1MHz 2 Ciss, Coss, Crss -- VDS [Pch] f=1MHz 1000 Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- pF 7 Ciss 1000 7 5 Ciss Coss 100 7 5 3 0 5 10 15 20 IT08607 3 Crss Coss 2 Crss 100 0 --2 --4 --6 --8 --10 --12 IT03872 Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 VGS -- Qg Drain-to-Source Voltage, VDS -- V --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 [Nch] VDS= --6V ID= --4A VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V VDS=10V ID=4.5A 8 IT09311 0 2 4 6 8 10 12 IT09312 Total Gate Charge, Qg -- nC 3 2 10 7 5 Total Gate Charge, Qg -- nC ASO IDP=18A ID=4.5A 10 [Nch] 10s 1m s 3 2 --10 7 5 ASO IDP= --16A 1m s [Pch] <10s 10 ID= --4A Drain Current, ID -- A Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 m s 0m 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 DC op era ms 0m s op s er ati on tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Operation in this area is limited by RDS(on). 0.01 0.01 --0.01 --0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 1.2 Drain-to-Source Voltage, VDS -- V IT09285 PD -- Ta [Nch / Pch] Mounted on a ceramic board (900mm2!0.8mm) Drain-to-Source Voltage, VDS -- V IT09286 Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 To t 0.6 al Di 1u 0.4 ss ip ni t ati on 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT09287 No.8359-5/6 VEC2607 Note on usage : Since the VEC2607 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8359-6/6 |
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