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| TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 60 m (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V, (VDS = -10 V, ID = -1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -30 -30 20 -3.2 -12.8 1.35 1.12 W 0.53 0.33 0.67 -1.6 0.11 150 -55~150 mJ A mJ C C Unit V V V JEDEC A 2-3U1B JEITA TOSHIBA Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) Single-device operation (Note 3a) Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Caution: This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPCF8304 Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 C/W 111.6 235.8 C/W 378.8 Unit Marking (Note 6) Lot code (month) Lot No. Part No. (or abbreviation code) F5D Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150. (b) Device mounted on a glass-epoxy board (b) 25.4 Note 2: (a) Device mounted on a glass-epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -1.6 A Note 5: Repetitive rating; pulse width limited by max channel temperature Note 6: to the lower left of the Part No. marking indicates Pin 1. 2 2006-11-17 TPCF8304 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 0 V -10 V 4.7 ID = -1.6 A VOUT RL = 9.38 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4.5 V, ID = -1.6 A VGS = -10 V, ID = -1.6 A VDS = -10 V, ID = -1.6 A Min -30 -15 -0.5 2.9 Typ. 80 60 5.9 600 60 70 5.3 12 8.4 34 14 1.4 2.7 Max 10 -10 -1.2 105 72 ns nC pF Unit A A V V m S VDD -15 V - < 1%, tw = 10 s Duty = VDD - -24 V, VGS = -10 V, ID = -3.2 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -3.2 A, VGS = 0 V Min Typ. Max -12.8 1.2 Unit A V 3 2006-11-17 TPCF8304 ID - VDS -5 -10 -6 -4 -4.5 -3.5 -3.0 Common source Ta = 25C Pulse test -10 -10 -3.5 ID - VDS -3.0 -8 -4.5 -6 -6 -2.8 -4 -2.7 -2.6 -2 -2.5 VGS = -2.3 V 0 0 -1 -2 -3 -4 -5 Common source Ta = 25C Pulse test (A) Drain current ID -3 -2.7 -2.6 -2 -2.5 -1 VGS = -2.3 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Drain-source voltage VDS (V) Drain current ID (A) -2.8 Drain-source voltage VDS (V) ID - VGS -8 -2.0 Common source VDS = -10 V VDS - VGS Common source Drain current ID VDS (A) -6 Pulse test (V) Ta= 25 -1.6 Pulse test -4 Drain-source voltage -1.2 -0.8 -1.6 -0.4 -0.8 ID = -3.2A -2 Ta = -55C 100 0 25 -2 -3 -4 -5 0 -1 0 0 -2 -4 -6 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 1000 Common source VDS = -10 V Pulse test Common source Ta = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs (S) Ta = -55C 10 100 25 Drain-source ON resistance RDS (ON) (m) 100 VGS = -4.5 V -10 1 -0.1 -0.3 -1 -3 -10 10 0.1 -1 -10 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPCF8304 RDS (ON) - Ta 150 10 5 3 -5.0 -10 IDR - VDS Drain-source ON resistance RDS (ON) (m) 120 ID = -0.8A, -1.6A, -3.2A 90 VGS = -4.5V 60 VGS = -10V Common source Pulse test 0 -80 -40 0 40 80 120 160 ID = -0.8A, -1.6A, -3.2A Drain reverse current IDR (A) -3.0 -1.0 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0 0.3 0.6 0.9 1.2 1.5 30 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 -2.0 Vth - Ta Ciss Vth (V) Gate threshold voltage Capacitance C (pF) -1.5 100 Coss Crss Common source VGS = 0 V f = 1 MHz -1.0 Common source -0.5 VDS = -10 V ID = -1mA Pulse test 0 -80 Ta = 25C 10 -0.1 -1 -3 -5 -10 -30 -50 -100 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Dynamic input/output characteristics -30 VDS VDD = -24V -20 VDD = -6V -15 -12 -10 -6 -5 -12 Common source ID = -3.2 A Ta = 25C Pulse test 4 8 12 16 0 -5 VGS -10 -15 Drain power dissipation PD (W) (V) 1.6 (1) 1.2 (2) 0.8 (3) 0.4 (4) 0 0 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 5s -25 VDS -24 40 80 120 160 200 0 0 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage Drain-source voltage VGS (V) TPCF8304 rth - tw 1000 Single pulse (4) (3) (2) (1) Transient thermal impedance rth (/W) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 ID max (pulsed) * (A) -10 1 ms * Drain current ID 10 ms * -1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -0.1 VDSS max -10 -100 -1 Drain-source voltage VDS (V) 6 2006-11-17 TPCF8304 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-17 |
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