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Hybride Impuls-Laserdiode mit integrierter Treiberstufe 25 W Spitzenleistung Hybrid Pulsed Laser Diode with Integrated Driver Stage 25 W Peak Power Lead (Pb) Free Product - RoHS Compliant SPL LL90 Besondere Merkmale * Kleines kostengunstiges Plastik-Gehause * Integriert sind ein FET und Kondensatoren zur Impulsansteuerung * InAlGaAs/GaAs kompressiv verspannte Quantenfilmstruktur * Hochleistungslaser mit Large-Optical-Cavity" (LOC) Struktur * Laserapertur 200 m x 2 m * Schneller Betrieb (< 30 ns Impulsbreite) * Niedrige Versorgungsspannung (< 20 V) Anwendungen * * * * Entfernungsmessung Sicherheit, Uberwachung Beleuchtung, Zundung Test- und Messsysteme Features * * * * * * * Low cost, small size plastic package Integrated FET and capacitors for pulse control Strained InAlGaAs/GaAs QW-structures High power large-optical-cavity laser structure Laser aperture 200 m x 2 m High-speed operation (< 30 ns pulse width) Low supply voltage (< 20 V) Applications * * * * Range finding Security, surveillance Illumination, ignition Testing and measurement Safety advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 "Safety of laser products" Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Norm 60825-1 behandelt werden. Typ Type SPL LL90 Opt. Spitzenausgangsleistung Opt. Peak Power 25 W Wellenlange Wavelength 905 nm Bestellnummer Ordering Code Q62702P5367 2007-04-04 1 SPL LL90 Grenzwerte (kurzzeitiger Betrieb) (TA = 25 C) Maximum Ratings (short time operation) Parameter Parameter Spitzenausgangsleistung Peak output power Ladespannung (VG = 15 V) Charge voltage (VG = 15 V) Gate-Spannung Gate voltage Tastverhaltnis Duty cycle Betriebstemperatur Operating temperature Lagertemperatur Storage temperature Lottemperatur (tmax = 10 s) Soldering temperature (tmax = 10 s) Symbol Symbol min. Werte Values max. 30 20 - 20 - - 40 - 40 - + 20 0.1 + 85 + 100 + 260 W V V % C C C - Einheit Unit Popt VC VG d.c. Top Tstg Ts 2007-04-04 2 SPL LL90 Optische Kennwerte (TA = 25 C) Optical Characteristics Parameter Parameter Zentrale Emissionswellenlange1) Emission wavelength1) Spektralbreite (Halbwertsbreite)1) Spectral width (FWHM)1) Spitzenausgangsleistung1) Peak output power1) Ladespannung an der Laserschwelle Charge Voltage at laser threshold Anstiegs- und Abfallzeit (10% ... 90%)1), 2) Rise and fall time (10% ... 90%)1), 2) Austrittsoffnung Aperture size Symbol Symbol min. 895 - 22 1.2 11 14 - 12 Werte Values typ. 905 7 25 1.5 200 x 2 15 max. 915 9 28 2.0 - - - 18 nm nm W V ns ns m2 Grad deg. Grad deg. Einheit Unit Popt UC, th tr , tf wxh Strahldivergenz (Halbwertsbreite) parallel zum || pn-Ubergang1) Beam divergence (FWHM) parallel to pn junction1) Strahldivergenz (Halbwertsbreite) senkrecht zum pn-Ubergang1) Beam divergence (FWHM) perpendicular to pn-junction1) Temperaturkoeffizient der Wellenlange Temperature coefficient of wavelength Thermischer Widerstand Thermal resistance Einschaltpunkt der Gate-Spannung Switch on gate voltage 1) 27 30 33 / T - - - 0.30 200 4.0 0.32 - - nm/K K/W V Rth VG on 2) Werte beziehen sich auf folgende Standardbetriebsbedingung: 30 ns Pulsbreite, 1 kHz Pulswiederholrate, 16 V Ladespannung, 15 V Gate-Spannung und 25C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec EL7104C. Values refer to the following standard operating conditions: 30 ns pulse width, 1 kHz pulse repetition rate, 16 V charge voltage, 15 V gate voltage and 25 C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C. Die Schaltgeschwindigkeit ist abhangig von Strom und Geschwindigkeit, mit der die Gate-Kapazitat (typ. 300 pF) des internen Transistors geladen wird. Geringere Anstiegs- und Abfallzeiten erhalt man bei reduzierter optischer Spitzenleistung (siehe Diagramme auf Seite 5) Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300 pF) of the internal transistor. Reduced rise and fall times occur at reduced optical peak power (see diagrams on page 5) 2007-04-04 3 SPL LL90 Optical output power Popt vs charge voltage Vc (tp = 30 ns) P opt 35 W 30 25 20 50 OHL01939 Optical spectrum, relative intensity Irel vs. wavelength (Popt = 25 W, tp = 30 ns) 100 OHL01910 I rel 75 15 10 5 0 0 860 25 0 5 10 15 20 V 30 880 900 920 nm 940 Vc Far-field distribution parallel to junction Irel vs. angle || 1.00 OHL01944 Far-field distribution perpendicular to junction Irel vs. angle 1.00 OHL01945 I rel 0.75 I rel 0.75 0.50 0.50 0.25 0.25 0 -40 -30 -20 -10 0 10 20 Deg 40 0 -40 -30 -20 -10 0 10 20 Deg 40 4 2007-04-04 SPL LL90 Optical pulse form for variing trigger pulse widths (MOSFET driver Elantec EL7104C) P opt 30 W 25 Optical Pulse Width FWHM OHL01940 Optical pulse width vs. trigger pulse width (MOSFET driver Elantec EL7104C) 40 ns 35 30 25 20 15 10 5 0 OHL01942 20 Trigger Pulse Width 4 ns 10 ns 15 ns 20 ns 30 ns 40 ns 80 ns 15 10 5 0 0 20 40 60 80 100 ns 140 0 t Optical peak power, fall and rise time vs. pulse width (MOSFET driver Elantec EL7104C) 40 W 35 30 Peak Power 25 20 Fall Time 15 10 5 0 15 10 5 0 ns 40 25 20 OHL01941 10 20 30 40 50 60 Trigger Pulse Width ns 80 Optical peak power vs. optical pulse energy (MOSFET driver Elantec EL7104C) P opt 40 ns 35 P opt 30 W 25 OHL01943 Rise/Fall Time 30 20 15 10 Rise Time 5 0 5 10 15 20 25 30 Pulse Width FWHM 0 0 0.2 0.4 0.6 0.8 1.0 Optical Pulse Energy J 1.4 2007-04-04 5 SPL LL90 Mazeichnung Package Outlines 2.4 (0.094) 0.2 (0.008) 4.9 (0.193) 0.2 (0.008) 1.05 (0.041) 0.3 (0.012) 1.35 (0.053) 0.2 (0.008) 0.3 (0.012) -0.25 (0.010) +0.4 (0.016) R0.3 (0.012) Laser Diode 5 (0.197) 0.2 (0.008) 0 (0.000) 0.1 (0.004) (12.2 (0.480)) 1 2 3 Surface not flat 0 (0.000) 0.1 (0.004) 0 (0.000) 0.1 (0.004) 2.5 (0.098) 0.2 (0.008) 25.2 (0.992) 24.2 (0.953) 0 (0.000) 0.1 (0.004) 2 VC 8.6 (0.339) 0.4 (0.016) (2.35 (0.093)) 1.8 (0.071) 1.2 (0.047) FET D S C C 1 Trigger G VG Laser diode 0.5 (0.020) 0.1 (0.004) spacing 2.54 (0.100) R0.25 (0.010) 0.6 (0.024) 0.4 (0.016) 3 GND GWOY6124 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-04 6 SPL LL90 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-04 7 |
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