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Product Bulletin OPB755N June 1996 January 2006 Reflective Object Sensor Type OPB755N Features *High contrast ratio 1000 to 1 minimum *12.0" 0.5" min. UL#1429 26 AWG wire leads terminated into an AMP #640442-5 connector 12.0 0.5 (304.8 12.7) *Low cost plastic housing Description The OPB755N reflective assembly features a phototransistor output designed to decrease low-level light gain while not affecting the high-level light gain. Available with two mounting tabs as OPB755T. Available with PC Board mountable leads as OPB750 series. Photologic(R) output sensors available in OPB760/OPB770 series. Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . -40o C to +80o C Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Reverse DC Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Output Phototransistor Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Notes: (1) Derate Linearly 1.82 mW/o C above 25o C. (2) All parameters tested using pulse technique. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (4) Photocurrent is measured using an Eastman Kodak Neutral White test card having a 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #1257795. (5) IC(OFF) is the photocurrent measured with current to the input diode and a 5% reflecting surface. For RoHS compliant devices add "Z" to the end of the part number: OPB755NZ Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 11-46 (972) 323-2200 Fax (972) 323-2396 Type OPB755N Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Input Diode VF IR V(BR)CEO ICEO PARAMETER MIN MAX UNITS 1.80 100 30 100 0.40 500 375 250 250 V A V nA V A A A nA IF = 40 mA VR = 2.0 V IC = 100 A TEST CONDITIONS Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Collector Dark Current Saturation Voltage On-State Collector Current Output Phototransistor VCE = 10 V, IF = 0, H = 0 IC = 150 A, IF = 30 mA, d = 0.22" (4) VCE = 5 V, IF = 30 mA, d = 0.08" (4) VCE = 5 V, IF = 30 mA, d = 0.15" (4) VCE = 5 V, IF = 30 mA, d = 0.22" Coupled VCE(SAT) IC(ON) Off-State Collector Current IC(OFF) IF = 30 mA, VCE = 5 V,(5) d = 0.08" 0.15" 0.22" , , Typical Performance Curves Normalized Collector Current vs. Object Distance Normalized to d = .150" IF = 30 mA VCE = 5 V Average Normalized Ouput Current vs. Forward Current Normalized to IF = 30 mA VCE = 5 V +2 Average -2 +2 -2 Distance to Reflective Surface - Inches Forward Current - mA Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 11-47 |
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