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| HMC-ALH444 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Features Noise Figure: 1.75 dB @ 10 GHz Gain: 17 dB P1dB Output Power: +19 dBm @ 5 GHz Supply Voltage: +5V @ 55 mA Die Size: 2.64 x 1.64 x 0.1 mm Typical Applications This HMC-ALH444 is ideal for: * Wideband Communication Systems * Surveillance Systems AMPLIFIERS - LOW NOISE - CHIP * Point-to-Point Radios * Point-to-Multi-Point Radios * Military & Space * Test Instrumentation * VSAT Functional Diagram General Description The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage. Electrical Specifi cations*, TA = +25 C, Vdd= +5V Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output IP3 Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) *Unless otherwise indicated, all measurements are from probed die 15 Min. Typ. 1 - 12 17 0.02 1.5 10 14 28 19 55 2 Max. Units GHz dB dB / C dB dB dB dBm dBm mA 0 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH444 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency Note: Measured Performance Characteristics (Typical Performance at 25C) Vd= 5 V, Vg2= 1.5 V, Id= 55 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 - 49 AMPLIFIERS - LOW NOISE - CHIP HMC-ALH444 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Absolute Maximum Ratings Drain Bias Voltage RF Input Power Gate Bias Voltage Vgg1 Gate Bias Voltage Vgg2 +5.5 Vdc 12 dBm -1 to 0.3 Vdc 0 to 2.5 Vdc 180 C -65 to +150 C -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - LOW NOISE - CHIP Channel Temperature Storage Temperature Operating Temperature Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" 0 - 50 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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