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Battrax(R) Dual Port Negative SLIC Protector RoHS This Battrax device is an integrated overvoltage protection solution for SLIC-based (Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using four SCRs and four gate diodes. SIDACtor Devices (T) 6 Ground 5 (R) 4 The device is referenced to VBAT and conducts when a voltage that is more negative than -VREF is applied to the cathode (Pins 1, 3, 4, or 6) of the SCR. During conduction, all negative transients are shorted to Ground. All positive transients are passed to Ground by the diodes. 1 (T) 2 (-VREF) 3 (R) For specific diagrams showing these Battrax applications, see Figure 6.48 in Section 6, "Reference Designs" of this Telecom Design Guide. Electrical Parameters Part Number * B1101U_ 4L B1161U_ 4L B1201U_ 4L VDRM Volts |-VREF| + |-1.2V| |-VREF| + |-1.2V| |-VREF| + |-1.2V| VS Volts |-VREF| + |-10V| |-VREF| + |-10V| |-VREF| + |-10V| VT Volts 4 4 4 IDRM Amps 5 5 5 IGT mAmps 100 100 100 IT Amps 2.2 2.2 2.2 IH mAmps 100 160 200 * "L" in part number indicates RoHS compliance. For non-RoHS compliant device, delete "L" from part number. For individual "UA" and "UC" surge ratings, see table below. General Notes: * All measurements are made at an ambient temperature of 25 C. IPP applies to -40 C through +85 C temperature range. * IPP is a repetitive surge rating and is guaranteed for the life of the product. * IPP ratings assume a VREF = 48 V. * VDRM is measured at IDRM. * VS is measured at 100 V/s. * VREF maximum value for the negative Battrax is -200 V. Surge Ratings in Amps IPP Series 0.2x310 * 2x10 * 8x20 * 0.5x700 ** 2x10 ** 1.2x50 ** Amps A C 20 50 Amps 150 500 Amps 150 400 10x160 * 10x160 ** Amps 90 200 10x560 * 10x560 ** Amps 50 150 5x320 * 9x720 ** Amps 75 200 10x360 * 10x1000 * 5x310 * ITSM 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz Amps 75 175 Amps 45 100 Amps 75 200 Amps 20 50 di/dt Amps/s 500 500 * Current waveform in s ** Voltage waveform in s Telecom Design Guide * (c) 2006 Littelfuse 3 - 81 www.littelfuse.com Battrax(R) Dual Port Negative SLIC Protector Thermal Considerations Package Modified MS-013 6 5 4 1 2 3 Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +125 -65 to +150 60 Unit C C C/W Capacitance Values pF Part Number B1101UA 4L B1101UC 4L B1161UA 4L B1161UC 4L B1201UA 4L B1201UC 4L MIN 50 50 50 50 50 50 MAX 200 200 200 200 200 200 Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias. +I VF IPP - Peak Pulse Current - %IPP 100 Peak Value tr = rise time to peak value td = decay time to half value VS VDRM -V VT +V Waveform = tr x td IDRM IH IGT IT -I 50 Half Value 0 0 tr td t - Time (s) V-I Characteristics tr x td Pulse Waveform Percent of VS Change - % 10 IH (TC = 25 C) 14 12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160 IH 25 C 25 C Ratio of Junction Temperature (TJ) - C Case Temperature (TC) - C Normalized DC Holding Current versus Case Temperature Normalized VS Change versus Junction Temperature www.littelfuse.com 3 - 82 (c) 2006 Littelfuse * Telecom Design Guide |
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