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 2SK3847
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK3847
Switching Regulator, DC/DC Converter and Motor Drive Applications
Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 12 m (typ.) : |Yfs| = 36 S (typ.) Unit: mm
Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 20 32 96 30 47 32 3 150 -55~150 Unit V V V A A W mJ A mJ C C
Drain power dissipation Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.17 83.3 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 48 H, RG = 25 , IAR = 32 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. JEDEC JEITA TOSHIBA 2-10S2B
Weight: 1.5 g (typ.)
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2SK3847
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr 10 V VGS 0V 15 ID = 16 A RL = 1.25 Output VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 16 A VGS = 10 V, ID = 16 A VDS = 10 V, ID = 16 A Min -- -- 40 15 1.5 -- -- 18 -- -- -- -- Typ. -- -- -- -- -- 19 12 36 1980 210 300 7 Max 10 100 -- -- 2.5 26 16 -- -- -- -- -- pF Unit A A V V m S
Turn-on time Switching time Fall time
ton
--
22
-- ns
tf
VDD 20 V
--
10
--
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge
toff Qg Qgs Qgd
Duty 1%, tw = 10 s
-- --
60 40 28 12
-- -- -- -- nC
VDD 32 V, VGS = 10 V, ID = 32 A
-- --
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 32 A, VGS = 0 V IDR = 32 A, VGS = 0 V dlDR/dt = 50 A/S Min -- -- -- -- -- Typ. -- -- -- 40 24 Max 32 96 -1.5 -- -- Unit A A V ns nC
Marking
K3847
Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb) - free package or lead (Pb) - free finish.
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2SK3847
ID - VDS
20 Common source Tc = 25C Pulse test 5.5 5 12 4.75 4.5 3.5 10 8 4 3.75 80 6 4.25 100 10 8 6 5.5
ID - VDS
Common source Tc = 25C Pulse test 5 4.75 60 4.5 40 4.25 4 3.75 20 VGS = 3 V 3.5 3.25
16
(A)
ID
Drain current
8 3.25 4 VGS = 3 V
0
Drain current
ID
0.2 0.3 0.4
(A)
0
0
0.1
0.5
0
2
4
6
8
10
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
100
VDS - VGS
1.0
VDS (V)
80
Common source VDS = 10 V Pulse test
Common source Tc = 25C Pulse test
0.8
ID
(A)
60
Drain-source voltage
0.6
Drain current
40 25 20 100 Tc = -55C
0.4
ID = 32 A
0.2
16 8
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID (S)
100 Common source VDS = 10 V Pulse test Tc = -55C 25 10 100
RDS (ON) - ID
1000 Common source Tc = 25C Pulse test
Forward transfer admittance
Drain-source ON resistance RDS (ON) (m)
Yfs
100
VGS = 4.5 V 10
1 1
10
100
10
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
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2SK3847
RDS (ON) - Tc
50
IDR - VDS
100
Drain-source ON resistance RDS (ON) (m)
40 ID = 32 A 16 20 VGS = 4.5 V 8
(A)
Common source Pulse test
IDR
10 5 10 3 1 VGS = 0, -1 V Common source Tc = 25C Pulse test 1 0 -0.4 -0.8 -1.2 -1.6 -2.0
30
ID = 32, 16, 8 A 10 VGS = 10 V 0 -80 -40 0 40 80 120 160
Case temperature
Tc
(C)
Drain reverse current
Drain-source voltage
VDS
(V)
C - VDS
10000 5
Vth - Tc Vth (V)
Common source VDS = 10 V ID = 1 mA Pulse test
(pF)
Common source VGS = 0 V f = 1 MHz Tc = 25C
4
Gate threshold voltage
Ciss 1000
C
3
Capacitance
2
1
100 0.1
Coss Crss 1 10 100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature
Tc
(C)
PD - Tc
50 50
Dynamic input/output characteristics VDS (V)
Common source ID = 32 A Tc = 25C Pulse test 20
(W)
Drain power dissipation
Drain-source voltage
30
30
12 16
20
20 8 10 VGS 0 0 20 40 60 80 VDS = 32 V
8
10
4
0 0
40
80
120
160
0 100
Case temperature
Tc
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
VDS
VGS
PD
40
40
16
(V)
2SK3847
rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c)
10
1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse PDM t T Duty = t/T Rth (ch-c) = 4.17C/W 100 1m 10 m 100 m 1 10
0.01 0.01 10
Pulse width
tw
(s)
Safe operating area
1000 100
EAS - Tch
EAS (mJ)
10 ms *
80
100
ID max (pulse) * 1 ms *
60
ID max (continuous)
Avalanche energy
(A)
Drain current
ID
40
10
20
DC operation Tc = 25C
0 25
50
75
100
125
150
1
*
Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature.
Channel temperature (initial) BVDSS IAR VDD Test circuit RG = 25 VDD = 25 V, L = 48 H
Tch (C)
0.1 0.1
VDSS max 10 100
15 V 0V
1
Drain-source voltage
VDS
(V)
VDS Waveform
AS =
1 B VDSS L I2 B 2 - VDD VDSS
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2SK3847
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2006-09-27


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