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2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4016 Switching Regulator Applications * * * * Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 13 52 50 1033 13 5.0 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit 2 C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 1 2005-05-30 2SK4016 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 13 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 15 ID = 6.5 A VOUT RL = 30 VDD 200 V - VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min 30 600 2.0 5.0 Typ. 0.33 10 3100 20 270 60 110 50 215 62 40 22 Max 10 100 4.0 0.50 pF Unit A V A V V S ns nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 220 0.8 Max 13 52 -1.7 Unit A A V ns C Marking 2SK4016 Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 2 2005-05-30 2SK4016 ID - VDS 10 10 6.3 7 6 COMMON SOURCE Tc = 25C PULSE TEST 5.7 4 5.4 2 VGS = 5 V 0 0 2 4 6 8 10 0 0 10 20 20 8 10 7 ID - VDS 6.6 COMMON SOURCE Tc = 25C PULSE TEST DRAIN CURRENT ID (A) 8 DRAIN CURRENT ID (A) 8 16 6.3 12 6 6 8 5.7 4 5.4 VGS = 5 V 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS 24 COMMON SOURCE VDS = 10 V PULSE TEST 10 VDS - VGS COMMON SOURCE Tc = 25C PULSE TEST 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 8 16 6 12 4 ID = 13 A 8 100 4 Tc = -55C 25 0 0 2 4 6 10 2 6 3 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) |Yfs| - ID 100 RDS (ON) - ID 10 COMMON SOURCE Tc = 25C PULSE TEST FORWARD TRANSFER ADMITTANCE Yfs (S) Tc = -55C 10 25 100 DRAIN-SOURCE ON-RESISTANCE RDS (ON) () COMMON SOURCE VDS = 10 V PULSE TEST 1 1 VGS = 10 V V 0.1 0. 1 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2005-05-30 2SK4016 RDS (ON) - Tc 2.0 COMMON SOURCE VDS = 10 V PULSE TEST 100 IDR - VDS COMMON SOURCE Tc = 25C PULSE TEST DRAIN-SOURCE ON-RESISTANCE RDS (ON) () 1.6 DRAIN REVERSE CURRENT IDR (A) 10 1.2 5 10 1 0.8 ID = 10 A 3 0.4 6 0 -80 -40 0 40 80 120 160 0.1 3 0 0.4 1 VGS = 0 V 0.8 1.2 1.6 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) C - VDS 10000 4 Vth - Tc Vth (V) COMMON SOURCE VDS = 10 V ID = 1 mA 3 Ciss (pF) 1000 GATE THRESHOLD VOLTAGE CAPACITANCE C Coss 100 COMMON SOURCE VGS = 0 V f = 1 MHz 10 Tc = 25C 0.1 1 10 100 Crss 2 1 0 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc 80 600 DYNAMIC INPUT/OUTPUT CHARACTERISTICS COMMON SOURCE ID = 13 A Tc = 25C PULSE TEST 400 VDS VDD = 100V 400V 7.5 200V 12.5 15 PD (W) DRAIN-SOURCE VOLTAGE VDS (V) 500 60 DRAIN POWER DISSIPATION 10 40 300 VGS 200 5 20 100 2.5 0 0 40 80 120 160 200 0 0 20 40 60 0 80 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2005-05-30 GATE-SOURCE VOLTAGE VGS (V) 2SK4016 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 2.5C/W 0.001 10 100 1 10 100 1 10 PULSE WIDTH tw (s) EAS - Tch 100 SAFE OPERATING AREA ID max (PULSED) * 100 s * ID max (CONTINUOUS) * 1200 1000 800 1 ms * (A) 10 600 DRAIN CURRENT ID 1 DC OPERATION Tc = 25C 400 200 *SINGLE NONREPETITIVE 0.1 PULSE Tc = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.01 1 10 100 1000 VDSS max 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) DRAIN-SOURCE VOLTAGE VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform Test circuit RG = 25 VDD = 90 V, L = 10.7 mH E AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2005-05-30 2SK4016 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2005-05-30 |
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