View 2SK3880_4111421.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV)
2SK3880
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 30 6.5 19.5 80 375 6.5 8 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit C/W C/W 1
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.1 mH, RG = 25 , IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2006-11-13
2SK3880
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 3.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 20 V, ID = 3.5 A Min 30 800 2.0 2.5 Typ. 1.35 5.2 1500 25 140 35 Max 10 100 4.0 1.7 pF Unit A V A V V S
10 V VGS 0V 50 RL= 114 VDD 400 V - VOUT

ns

Turn-on time Switching time Fall time
ton
80
tf
Duty < 1%, tw = 10 s =
50

nC
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge
toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6.5 A -
220 35 22 13

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6.5 A, VGS = 0 V IDR = 6.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1200 11.5 Max 6.5 19.5 -1.7 Unit A A V ns C
Marking
TOSHIBA
K3880
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-13
2SK3880
5
Common source COMMON SOURCE TcTc =25C 25C Pulse testTEST PULSE
ID - VDS
8,10 6 5.5
10
ID - VDS 8,10 6
COMMON SOURCE Tc = 25C PULSE TEST
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
4
8
5.75
6
3
5.25
5.5
4
2
5
5.25 5
1 VGS=4.5V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS (V) 10
2
VGS=4.5V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
16
DRAIN-SOURCE VOLTAGE VDS (V)
20
VDS - VGS
COMMON SOURCE Common source Tc = 25C Ta=25 PULSE TEST Pulse test
DRAIN CURRENT ID (A)
Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test 12
PULSE TEST
16
12
ID=7A
8
8
3.5
4
Ta=100 -55 25
4
1.5
0 0 2 4 6 8
(V)
0
10
0
GATE-SOURCE VOLTAGE VGS
4 8 12 16 GATE-SOURCE VOLTAGE VGS (V)
20
100
FORWARD TRANSFER ADMITTANCE Yfs (S)
Yfs - ID
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
RDS (ON) - ID
10.00 Common source COMMON SOURCE V = =10V VGS GS10 V Tc = 25C Tc=25 PULSE TEST Pulse test
Common source COMMON SOURCE VDS=20V VDS = 20 V Pulse test
PULSE TEST
10 -55
25
1.00
Ta=100 1
0.1 0.1 1 10 DRAIN CURRENT ID (A) 100
0.10 0.01 0.1 1 DRAIN CURRENT ID (A) 10
3
2006-11-13
2SK3880
5
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
RDS (ON) - Tc
DRAIN REVERSE CURRENT IDR (A)
10
COMMON SOURCE Common source Tc = 25C Tc=25 PULSE TEST Pulse test
IDR - VDS
4
Common source COMMON SOURCE V = =10V VGS GS10 V PULSE TEST Pulse test 7
3 3 2 ID=1.5A 1
1
3 10 VGS=0-1V 1
0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (C) 160
0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
DRAIN-SOURCE VOLTAGE VDS (V)
10000
CAPACITANCE - VDS
Vth (V)
5
Vth - Tc
Ciss
(pF)
4
1000 Coss
GATE THRESHOLD VOLTAGE
CAPACITANCE C
3
100
2
COMMON SOURCE
Common source VGS = 0 V VGS=0V f = 1 MHz f=1MHz Tc = 25C Tc=25 10 0.1
COMMON SOURCE
Crss
1
Common source V DS=10V ID = 1 mA ID=1mA PULSE TEST Pulse test
VDS = 10 V
1
10
100
0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (C) 160
DRAIN-SOURCE VOLTAGE VDS (V)
120
PD (W)
PD - Tc
DRAIN-SOURCE VOLTAGE VDS (V)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500 20
100 80 60 40 20 0 0 40 80 120
Tc (C)
VDD=100V 300 200V 400V
COMMON SOURCE Common source
DRAIN POWER DISSIPATION
12
200
8
100
ID=6.5A ID = 6.5 A
Tc = 25C
Tc=25 Pulse test
4
PULSE TEST
0 0 20 40 60
0
160
CASE TEMPERATURE
TOTAL GATE CHARGE Qg (nC)
4
2006-11-13
GATE-SOURCE VOLTAGE VGS
400
VDS
16
(V)
2SK3880
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10 1 0.1 0.01
Duty = 0.5 0.2 0.1 0.0 0.0 0.0 SINGLE PULSE
PDM t DUTY = t/T
0.001 0.00001
th (ch-c) = 1.56C/W
0.0001
0.001
0.01
(S)
0.1
1
10
PULSE WIDTH tw
SAFE OPERATING AREA
100
ID MAX (PULSED) 100 s*
EAS - Tch
400
AVALANCHE ENERGY EAS (mJ)
350 300 250 200 150 100 50 0 25 50 75 100 125
Tch (C)
DRAIN CURRENT ID (A)
10
ID MAX (CONTINUOUS)
1 ms*
1
DC OPERATION Tc = 25C
0.1 * SINGLE NONREPETITIVE PULSE
Tc = 25C Curves must be derated linearly with increase in temperature
150
VDSS MAX
CHANNEL TEMPERATURE (INITIAL)
0.01 1 10 100 1000 DRAIN-SOURCE VOLTAGE VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
TEST CIRCUIT RG = 25 VDD = 90 V, L = 16.1 mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
5
2006-11-13
2SK3880
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-13

▲Up To Search▲

Price & Availability of 2SK3880

	To Download 2SK3880 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .