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| Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SA1740 FEATURES Power dissipation PCM : 500 mW (Tamb=25) 3. EMITTER TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 1 2 3 Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-ON Time Turn-OFF Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10A, IE=0 Ic=-1mA, IB=0 IE=-10A, IC=0 VCB=-300V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE=-30V, IC=-10mA VCB=-30V, IE=0, f=1MHz VCC=-150V, Ic=-50mA, IB1=-IB2=-5mA -400 -400 -5 -0.1 -0.1 60 200 -0.8 -1 70 5 0.25 5 A A V V MHz pF s s fT Cob ton toff CLASSIFICATION OF hFE(1) Rank Range Marking D 60-120 AK E 100-200 |
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